IS61SP12832
IS61SP12836 ISSI®
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
02/11/04
Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and
119-pin PBGA packages
• Single +3.3V, +10%, –5% power supply
• Power-down snooze mode
DESCRIPTION
The ISSI IS61SP12832 and IS61SP12836 are high-speed
synchronous static RAM designed to provide a burstable,
high-performance memory for high speed networking and
communication applications. It is organized as 131,072
words by 32 bits and 36 bits, fabricated with ISSI's ad-
vanced CMOS technology. The device integrates a 2-bit
burst counter, high-speed SRAM core, and high-drive
capability outputs into a single monolithic circuit. All syn-
chronous inputs pass through registers controlled by a
positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be from
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQa, BW2 controls DQb, BW3 controls
DQc, BW4 controls DQd, conditioned by BWE being
LOW. A LOW on GW input would cause all bytes to be
written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FEBRUARY 2004
FAST ACCESS TIME
Symbol Parameter -166 -133 -5 Units
tKQ Clock Access Time 3.5 4 5 ns
tKC Cycle Time 6 7. 5 1 0 ns
Frequency 166 133 100 MHz
128K x 32, 128K x 36 SYNCHRONOUS
PIPELINED STATIC RAM