TCK106AF/TCK107AF/TCK108AF
2015-12-29
1
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK106AF, TCK107AF, TCK108AF
1.0 A Load Switch IC with Slew Rate Control Driver in Small Package
The TCK106AF, TCK107AF and TCK108AF are load switch ICs
for a general power management with slew rate control driver,
featuring low switch ON resistance and wide input voltage operation
from 1.1 to 5.5 V.
Switch ON resistance is only 63 mΩ typical at VIN = 5.0 V, IOUT =
-0.5 A condition and output current is available on 1.0 A. TCK107AF
and TCK108AF feature output auto-discharge function.
These devices are available in SMV (2.8 mm x 2.9 mm Typ.)
package.
Feature
• Low ON resistance :
RON = 63 mΩ (Typ.) at VIN = 5.0 V, IOUT = -0.5 A
RON = 71 mΩ (Typ.) at VIN = 3.3 V, IOUT = -0.5 A
RON = 101 mΩ (Typ.) at VIN = 1.8 V, IOUT = -0.5 A
RON = 175 mΩ (Typ.) at VIN = 1.2 V, IOUT = -0.2 A
RON = 223 mΩ (Typ.) at VIN = 1.1 V, IOUT = -0.2 A
• Low Quiescent current
IQ = 110 nA (Typ.) at VIN = 5.5 V, IOUT = 0 mA
• High output current: IOUT = 1.0 A
• Wide input voltage operation: VIN = 1.1 to 5.5 V
• Built in Slew rate control driver
• Built in Auto-discharge (TCK107AF and TCK108AF)
• Active High and Pull down connection between CONTROL and GND (TCK106AF and TCK107AF)
• Active Low (TCK108AF)
• General purpose package SMV(SOT-25) (SC-74A)
Pin Assignment (top view) Top marking
SMV(SOT-25)(SC-74A)
SMV
SMV (SOT-25)(SC-74A) : 16 mg ( Typ.)
VIN
CONTROL GND
NC
VOUT
1
3
2
4
5
106: TCK106AF
107: TCK107AF
108: TCK108AF
2016-
TCK106AF/TCK107AF/TCK108AF
2015-12-29
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Input voltage VIN
-0.3 to 6.0 V
Control voltage VCT
-0.3 to 6.0 V
Output voltage VOUT
-0.3 to VIN +0.3 (Note1) V
Output current IOUT
DC 1.0
A
Pulse 1.5 (Note2)
Power dissipation PD
200 (Note3)
mW
580 (Note4)
Operating temperature range Topr −40 to 85 °C
Junction temeperature Tj 150 °C
Storage temperature Tstg −55 to 150 °C
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: VIN +0.3 ≤ 6.0 V
Note 2: 1 ms pulse, 1% duty cycle
Note 3: Unit Rating
Note 4: Rating at mounting on a board (FR4 board: 25.4 mm x 25.4 mm x 1.6 mm)
Block Diagram
TCK106AF, TCK107AF TCK108AF
Note 5: TCK107AF only
OUT
Control
Logic
V
IN
CONTROL
V
OUT
GND
Slew Rate
Control Driver
Control
Logic
V
IN
CONTROL
V
GND
S
lew Rate
Control Driver
Output
Discharge (Note
5)
Pull
Down
TCK106AF/TCK107AF/TCK108AF
2015-12-29
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Operating conditions
Characteristics Symbol Condition Min Max Unit
Input voltage VIN ― 1.1 5.5 V
Output current IOUT ― 1.0 A
CONTROL High-level input voltage VIH
1.1 V ≤ VIN ≤ 5.5 V
0.9 ― V
CONTROL Low-level input voltage VIL ― 0.4 V
Electrical Characteristics
DC Characteristics (Ta = -40 to 85°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Quiescent current (ON state) IQ
VIN = VCT = 5.5 V,
IOUT = 0 mA
TCK106AF
TCK107AF
― 110 230 nA
VIN = 5.5 V, VCT = 0 V,
IOUT = 0 mA TCK108AF
Standby current (OFF state) IQ(OFF)
VIN = 5.5 V, VCT = 0 V,
VOUT = OPEN (Note6)
TCK106AF
TCK107AF
― 65 150 nA
VIN = VCT = 5.5
V,
VOUT = OPEN (Note6) TCK108AF
OFF-state switch current ISD(OFF)
VIN = 5.5 V, VCT = 0 V,
VOUT = GND
TCK106AF
TCK107AF
― 14 1000 nA
VIN = VCT = 5.5 V,
VOUT = GND TCK108AF
On resistance RON
VIN = 5.0 V, IOUT = -0.5 A ― 63 90
mΩ
VIN = 3.3 V, IOUT = -0.5 A ― 71 105
VIN = 1.8 V, IOUT = -0.5 A ― 101 155
VIN = 1.2 V, IOUT = -0.2 A ― 175 270
VIN = 1.1 V, IOUT = -0.2 A ― 223 ―
Discharge on resistance RSD ― (TCK107AF and TCK108AF) ― 100 ― Ω
Note 6: Except ISD(OFF) OFF-state switch current
TCK106AF/TCK107AF/TCK108AF
2015-12-29
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AC Characteristics (Ta = 25°C)
VIN = 1.2 V
Characteristics Symbol Test Condition (Figure 1) Min Typ. Max Unit
VOUT rise time tr RL = 500 Ω, CL = 0.1 μF ― 290 ― μs
VOUT fall time tf RL = 500 Ω, CL = 0.1 μF
TCK107AF
TCK108AF ― 30 ―
μs
TCK106AF ― 104 ―
Turn on delay tON RL = 500 Ω, CL = 0.1 μF ― 305 ― μs
Turn off delay tOFF RL = 500 Ω, CL = 0.1 μF ― 5 ― μs
VIN = 3.3 V
Characteristics Symbol Test Condition (Figure 1) Min Typ. Max Unit
VOUT rise time tr RL = 500 Ω, CL = 0.1 μF ― 130 ― μs
VOUT fall time tf RL = 500 Ω, CL = 0.1 μF
TCK107AF
TCK108AF ― 25 ―
μs
TCK106AF ― 110 ―
Turn on delay tON RL = 500 Ω, CL = 0.1 μF ― 100 ― μs
Turn off delay tOFF RL = 500 Ω, CL = 0.1 μF ― 10 ― μs
AC Waveform
TCK106AF, TCK107AF TCK108AF
Figure 1 tr, tf, tON, tOFF Waveforms
VIH
VOUT
VCT
VOL
VOH
VIL
90%
tON
tOFF
50%
50%
10%
tr
t
f
V
OUT
10%
90%
90%
10%
VIH
VOUT
VCT
VOL
VOH
VIL
90%
tON
t
OFF
50%
50%
10%
TCK106AF/TCK107AF/TCK108AF
2015-12-29
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Application Note
1. Application circuit example (top view)
The figure below shows the recommended configuration for TCK106AF, TCK107AF and TCK108AF.
1) Input capacitor
An input capacitor (CIN) is not necessary for the guaranteed operation of TCK106AF, TCK107AF and
TCK108AF. However, it is recommended to use input capacitors to reduce voltage drop due to sharp changes in
output current and also for improved stability of the power supply. When used, place CIN as close to VIN pin to
improve stability of the power supply. Also, due to the CIN selected, VIN < VOUT may occur, causing a reverse
current to flow through the body diode of the pass-through p-ch MOSFET of the load switch IC. In this case, a
higher value for CIN as compared to CL is recommended.
2) Output capacitor
An output capacitor (COUT) is not necessary for the guaranteed operation of TCK106AF, TCK107AF and
TCK108AF. However, there is a possibility of overshoot or undershoot caused by output load transient response,
board layout and parasitic components of load switch IC. In this case, an output capacitor with COUT more than
0.1μF is recommended.
3) Control pin
A control pins for TCK106AF and TCK107AF are both Active High and TCK108AF is Active Low. These controls
both the pass-through p-ch MOSFET and the discharge n-ch MOSFET (except TCK106AF), operated by the
control voltage and Schmitt trigger. When the control voltage level is High (Low; TCK108AF), p-ch MOSFET is ON
state and n-ch MOSFET is OFF state. When control voltage level is Low (High; TCK108AF), and the state of the
MOSFETs is reversed. Also, pull down resistance equivalent to a few MΩ is connected between CONTROL and
GND, thus the load switch IC is in OFF state even when CONTROL pin is OPEN(except TCK108AF). In addition,
CONTROL pin has a tolerant function such that it can be used even if the control voltage is higher than the input
voltage.
V
OUT
GND
VIN
CONTROL
C
L
R
L
LOAD
C
IN
Part number
Control
voltage IC
Operation
TCK106AF
TCK107AF
HIGH
ON
LOW
OFF
OPEN
OFF
TCK108AF
HIGH
OFF
LOW
ON
NC
TCK106AF/TCK107AF/TCK108AF
2015-12-29
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2. Power Dissipation
Both unit and board-mounted power dissipation ratings for TCK106AF, TCK107AF and TCK108AF are available
in the Absolute Maximum Ratings table.
Power dissipation is measured on the board shown below.
Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into
consideration the ambient temperature, input voltage, output current etc and applying the appropriate derating for
allowable power dissipation during operation.
①
: Rating at mounting on a board
Board material: FR4 board
Board dimension: 25.4 mm × 25.4 mm × 1.6 mm
Copper area: 645 mm2
②
: Unit Rating
Ambient temperature Ta (°C)
PD – Ta (SMV)
Power dissipation PD (mW)
−40 0
0
40 120
80
200
400
600
800
②
①
TCK106AF/TCK107AF/TCK108AF
2015-12-29
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Representative Common Characteristics
ON resistance R
ON
(mΩ)
OFF-state switch current I
SDOFF
(nA)
Standby current I
Q(OFF)
(nA)
I
Q
- V
IN
Input voltage VIN (V)
Quiescent current (ON state) I
Q
(nA)
Ta = 25°C
85°C
-
40
°C
I
Q(OFF)
- V
IN
Input voltage VIN (V)
T
a = 25
°C
85°C
-
40
°C
IOUT = 0 mA, VCT = 5.5 V
VCT = 0 V, VOUT = GND
Input voltage V
IN
(V)
Ta = 85°C
25°C
-40°C
VCT = 0 V, VOUT = GND
ISD(OFF) - VIN
Ta = 25°C
Output current I
OUT
(mA)
ON resistance R
ON
(mΩ)
IOUT = 200 mA
RON - IOUT
RON - VIN
Input voltage V
IN
(V)
Ta = 25°C
85°C
-40°C
VIN = 1.2V
1.8V
3.3V
5.0V
ON resistance R
ON
(mΩ)
Ambient temperature Ta (°C)
VIN = 1.2V
1.8V
3.3V
5.0V
IOUT = 200 mA
RON - Ta
TCK106AF/TCK107AF/TCK108AF
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time t (200 μs/div)
V
IN
= 1.2 V t
ON
Response
CL
= 0.1μF
1.0
μF
4.7
μF
1.0
0
4.0
2.0
0
10
0
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
time t (200 μs/div)
1.0
0
V
IN
= 3.3 V t
ON
Response
4.0
2.0
0
100
0
CL
= 0.1μF
1.0
μF
4.7
μF
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
time t (200 μs/div)
VIN = 5.0 V tON Response
CL
= 0.1μF
1.0
μF
4.7
μF
1.0
0
4.0
2.0
0
100
0
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
TCK107AF tON Response
time t (1 ms/div)
V
IN
= 1.2 V t
OFF
Response
CL
= 0.1μF
1.0
μF
4.7
μF
1.0
0
4.0
2.0
0
10
0
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
time t (1 ms/div)
1.0
0
V
IN
= 3.3 V t
OFF
Response
4.0
2.0
0
100
0
CL
= 0.1μF
1.0
μF
4.7
μF
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
TCK106AF tOFF Response
TCK106AF/TCK107AF/TCK108AF
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time t (1 ms/div)
VIN = 5.0 V tOFF Response
CL
= 0.1μF
1.0
μF
4.7
μF
1.0
0
4.0
2.0
0
100
0
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
time t (200 μs/div)
V
IN
= 1.2 V t
OFF
Response
CL
= 0.1μF
1.0
μF
4.7
μF
1.0
0
4.0
2.0
0
10
0
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
time t (200 μs/div)
1.0
0
V
IN
= 3.3 V t
OFF
Response
4.0
2.0
0
100
0
CL
= 0.1μF
1.0
μF
4.7
μF
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
TCK107AF tOFF Response
time t (200
μ
s/div)
VIN = 5.0 V tOFF Response
CL
= 0.1μF
1.0
μF
4.7
μF
1.0
0
4.0
2.0
0
100
0
2.0
RL = 500Ω
I
OUT
(mA)
V
OUT
(V)
V
CT
(V)
TCK106AF/TCK107AF/TCK108AF
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Package dimension
SMV (SOT-25)(SC-74A) Unit: mm
Weight : 16mg ( Typ.)
TCK106AF/TCK107AF/TCK108AF
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Land pattern dimensions (for reference only)
Unit: mm
0.95
0.95
2.4
1.0
0.8
0.8
0.6
TCK106AF/TCK107AF/TCK108AF
2015-12-29
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