ES2A/A-ES2D/A Vishay Lite-On Power Semiconductor 2.0A Surface Mount Ultra-Fast Rectifier Features D Glass passivated die construction D Super-fast recovery time for high efficiency D Low forward voltage drop, high current capability, and low power loss D Surge overload rating to 50A peak D Ideally suited for automated assembly D Plastic material - UL Recognition flammability SMA classification 94V-0 SMB 14 428 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage g =Working peak reverse voltage DC Bl ki voltage lt =DC Blocking Peak forward surge current Average forward current Junction and storage temperature range Type Symbol Value Unit ES2A/A ES2B/A ES2C/A ES2D/A VRRM =VRWM VR =V 50 100 150 200 50 2.0 -65...+150 V V V V A A C Typ Unit V mA mA ns pF K/W IFSM IFAV Tj=Tstg TT=110C Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode capacitance Thermal resistance junction to terminal Rev. A2, 24-Jun-98 Test Conditions IF=2A TA=25C TA=125C IF=1A, IR=0.5A, Irr=0.25A VR=4V, f=1MHz on PC board with 5.0mm2 Type Symbol VF IR IR trr CD RthJT Min 25 20 Max 0.90 5.0 350 25 1 (4) ES2A/A-ES2D/A Vishay Lite-On Power Semiconductor 2.4 IFSM - Peak Forward Surge Current ( A ) IFAV - Average Forward Current ( A ) Characteristics (Tj = 25_C unless otherwise specified) 2.0 1.6 1.2 0.8 0.4 0 25 50 75 100 125 150 50 40 30 20 10 0 175 Tamb - Ambient Temperature ( C ) 15401 Single Half Sine-Wave (JEDEC Method) Figure 1. Max. Average Forward Current vs. Ambient Temperature 1 10 100 Number of Cycles at 60 Hz 15403 Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 10 100 IR - Reverse Current ( m A ) IF - Forward Current ( A ) Tj = 125C 1.0 0.1 Tj = 25C Pulse Width = 300 s 0.01 0 15402 0.4 0.8 1.2 Figure 2. Typ. Forward Current vs. Forward Voltage 2 (4) 1.0 Tj = 25C 0.1 1.6 VF - Forward Voltage ( V ) 10 15404 0 40 80 120 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Rev. A2, 24-Jun-98 ES2A/A-ES2D/A Vishay Lite-On Power Semiconductor Dimensions in mm 14460 Case: molded plastic Polarity: cathode band or cathode notch Approx. weight: SMA 0.064 grams, SMB 0.093 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) ES2A/A-ES2D/A Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 4 (4) Rev. A2, 24-Jun-98