AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Applications
802.16 WiMAX infrastructure
24-pin 5x5mm leadless QFN SMT package
Product Features Functional Block Diagram
3.3 – 3.8 GHz
25 dB Gain
EVM <2.5 %@ 25 dBm Pout
Internal Active Bias
+5V Single Supply Voltage
+33 dBm P1dB
RoHS-compliant/Lead-free
5x5 mm QFN SMT package
13
14
15
11
12
3
2
1
5
4
17
19
18
20
16
9
7
8
6
10
Iref1
Vbias1
GND / NC
RF In
RF In
Vcc2
GND / NC
RF Out
RF Out
RF Out
GND / NC
GND / NC
GND / NC
GND / NC
GND / NC
GND / NC
Vcc1
GND / NC
Vbias2
Iref2
General Description Pin Configuration
The AH315 is a high dynamic range broadband driver
amplifier in a surface mount package. The two-stage
amplifier has 25 dB of gain, while achieving +25 dBm of
linear output power for 3.3–3.8 GHz WiMAX/WiBro
applications.
AH315 uses a high reliability +5V InGaP/GaAs HBT
p
rocess technology. The device incorporates proprietary
b
ias circuitry to compensate for variations in linearity and
current draw over temperature. The device does not require
any negative bias voltage; an internal active bias allows the
AH315 to operate directly off a commonly used single
+5V supply. The RoHS-compliant/Lead-free 5x5mm QFN
p
ackage is surface mountable to allow for low
manufacturing costs to the end user.
The AH315 is targeted for use in a configuration for the
driver stage amplifier in 802.16 WiMAX base stations
where high linearity and medium power is required.
Ordering Information
Part No. Description
AH315-G 3.3 – 3.8 GHz WiMAX 2W Driver Amp
AH315-PCB 3.4 – 3.6 GHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Pin No. Function
1 Iref 1
2 Vbias1
4, 5 RFin
3, 6, 7, 8, 9, 10, 14, 18, 20 GND/NC
11, 12, 13 RFout
15 Vcc2
16 Iref 2
17 Vbias2
19 Vcc1
Backside Paddle GND
Data Sheet: Rev A 09/02/10 - 1 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Data Sheet: Rev A 09/02/10 - 2 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings
Parameter Rating
Storage Temperature -55 to +125 o C
RF Input Power, CW, 50,T = 25ºC +19 dBm
Device Voltage, Vcc, Vbias +8 V
Collector Current, Icc (Icc1 + Icc2) 1600 mA
Iref 1 100 mA
Iref 2 50 mA
Device Power 8 W
Thermal Resistance RTH 14.4
o C/W
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter Min Typ Max Units
Vcc +4.75 +5 +6 V
Icc @ 24 dBm 700 mA
TJ (for >106 hours MTTF) +200 oC
Operating Temp. Range -40 +85 oC
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 3.4 – 3.6 GHz, in tuned application circuit.
Parameter Conditions Min Typical Max Units
Operational Frequency Range 3.3 3.8 GHz
Test Frequency 3.5 GHz
Power Gain 25 dB
Input Return Loss -15.2 dB
Output Return Loss -11.3 dB
EVM See Note 1. 2.3 2.5 %
Efficiency 8 %
Output P1dB +33 dBm
Noise Figure 7.3 dB
Device Voltage, Vcc +5 V
Iref 1 27 mA
Iref 2 10 mA
Quiescent Current, Icq See Note 2. 600 mA
Notes:
1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels.
2. This corresponds to the quiescent current or operating current under small-signal conditions with bias resistor R1=70Ω off pin 1 and
R2=150Ω off pin 16.
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Device Characterization Data
VCC = +5 V, ICQ = 600 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads
0
5
10
15
20
25
30
012345
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
Output Smith Chart
Input Smith Char
t
-1
0.6
-0.8
0.4
-0.6
-0.4
0.2
-0.2
0.25
0
0.8
1
-1 -0.75-0.5- 0 0.25 0.5 0.75 1
0.05 GHz
5 GHz
0.05 GHz
5 GHz
Notes:
The gain for the unmatched device in 50ohm system is shown as the trace in blue color. The impedance plots are shown from 0-5 GHz,
with markers placed at 0.05 and 5 GHz.
S-Parameter Data
VCC = +5 V, ICQ = 600 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (angle) S22 (dB) S22 (ang)
3200 -7.15 -47.75 24.62 -121.57 -46.71 81.59 -4.82 65.17
3250 -8.30 -67.91 25.04 -142.33 -45.76 65.79 -4.33 64.24
3300 -9.03 -85.52 25.23 -161.71 -45.35 52.08 -4.13 63.23
3350 -10.02 -100.73 25.25 179.97 -45.27 38.15 -4.18 62.35
3400 -10.60 -114.25 25.16 163.19 -45.49 25.90 -4.38 62.37
3450 -11.13 -121.9 25.05 147.33 -45.94 14.60 -4.68 63.12
3500 -11.83 -128.99 24.95 132.15 -46.35 3.68 -5.00 64.61
3550 -12.06 -133.37 24.84 117.52 -46.84 -6.51 -5.32 66.87
3600 -12.42 -133.94 24.79 103.11 -47.68 -18.83 -5.62 69.29
3650 -12.56 -134.22 24.71 89.24 -48.26 -29.21 -5.84 72.04
3700 -12.37 -132.5 24.67 75.18 -49.27 -43.37 -6.05 74.47
3750 -11.85 -131.84 24.70 61.44 -50.2 -58.07 -6.24 76.46
3800 -10.99 -131.88 24.73 47.15 -51.31 -77.27 -6.49 77.95
3850 -10.10 -134.27 24.90 32.58 -51.77 -99.53 -6.82 78.63
3900 -9.19 -139.24 25.02 17.14 -52.57 -125.81
-7.38 79.17
3950 -8.41 -146.73 25.29 0.702 -51.90 -156.29 -8.19 80.03
4000 -7.90 -157.43 25.43 -17.44 -50.26 173.75 -9.28 83.45
Data Sheet: Rev A 09/02/10 - 3 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
3.4 – 3.6 GHz Application Circuit (AH315-PCB)
Data Sheet: Rev A 09/02/10 - 4 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
Notes:
1. C12 to be placed as close as possible to the device.
2. C11 = 47 pF is critical. Do Not Replace with other value.
3. Place C19 between marking 3 and 4.
4. See PC Board Layout on page 8 for more details.
Bill of Material
Ref Des Value Description Manufacturer Part Number
U1 WiMax 2W Driver Amplifier TriQuint AH315-G
C1, C2, C4, C11, C15,
C16, C17, C18 47 pF Cap, Chip, 0805, 2%, 50V various
C3 0.8 Pf Cap, Chip, 0603, ± 0.05 pF,50V, Accu-P AVX 06035J0R8ABTTR
C5, C6, C7 1000 pF Cap, Chip, 0603, 5%, 50V, NPO-COG various
C8 4.7 uF Cap, Chip, 6032, 20%, 35V, TANT various
C12 0.1 uF Cap, Chip, 0805, 5%, 25V, X7R various
L1 18 nH Ind, Chip, 0603, 5%, mulilayer TOKO LL1608-FSL18NJ
R1 68 Res, Chip, 0603, 5%, 1/16W various
R2 150 Res, Chip, 0603, 5%, 1/16W various
R3, R4, R5 0 Res, Chip, 0805, 1/10W various
R6 0 Res, Chip, 0603, 5%, 1/16W various
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Typical Performance 3.4 – 3.6 GHz
Test conditions unless otherwise noted: Vpd, Vbias, Vcc = 5V, ICQ = 700 mA, +25 °C
Frequency MHz 3.4 3.5 3.6
Gain dB 25.4 25 25
Input Return Loss dB 14 15.2 15
Output Return Loss dB 10 11.3 10
Noise Figure dB 7.3
Output P1dB dBm +33
EVM @ 25 dBm Pout (1) % 2.3
Note: 1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels.
23
24
25
26
27
3.3 3.4 3.5 3.6 3.7 3.8
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
-20
-15
-10
-5
0
3.3 3.4 3.5 3.6 3.7 3.8
S11, S22 (dB)
Frequency (GHz)
Return Loss vs. Frequency
0
1
2
3
4
5
14 16 18 20 22 24 26
EVM ( %)
Pout (dBm)
EVM vs . Pout vs . Tempe rat ure
Data Sheet: Rev A 09/02/10 - 5 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
S11
S22
+85 C
+25 C
-40 C
OFDM, QAM- 64, 54 Mb/S
Freq = 3.5 GHz
0
1
2
3
4
5
14 16 18 20 22 24 26
EVM ( %)
Pout (dBm)
EVM vs. Pout vs. Frequency
OFDM, QAM-64, 54 Mb/S
22
23
24
25
26
27
28
22 24 26 28 30 32 34
Gain (dB )
Pout (dBm)
Gain vs. Pout vs. Temperature
OFDM, Q AM-64 , 54 Mb/S
Freq = 3.5 GHz
22
23
24
25
26
27
28
14 16 18 20 22 24 26
Gain (dB )
Pout (dBm)
Gain vs. Pout vs. Frequency
OFDM, QAM-64, 54 Mb/S
3.4 GHz
3.5 GHz
3.6 GHz
+85 C
+25 C
-40 C
3.4 GHz
3.5 GHz
3.6GHz
500
600
700
800
900
1000
20 22 24 26 28 30
Current (mA)
Pout (dBm)
Cur re n t vs. P o ut vs. Temper atur e
OFDM, QAM-6 4, 54 Mb/S
Freq = 3.5 GHz
500
600
700
800
900
1000
18 20 22 24 26 28
Current (mA)
Pout (dBm)
Cu rren t vs. P o u t vs. F req u en cy
OFDM, QAM-64, 54 Mb/S
3.4 GHz
+85 C 3.5 GHz
3.6 GHz
+25 C
-40 C
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
3.3 – 3.7 GHz Applications Note: Changing Icq Biasing Configurations at +5V
The AH315 can be configured to operate with lower bias current by varying the bias-adjust resistors R1 & R2. The
recommended circuit configurations shown previously in this datasheet have the device operating with a 600 mA as the
quiescent current (ICQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve
upon the efficiency of the device, but degrade the EVM performance. Measured data shown in the plots below represents the
AH315 measured and configured for 3.5 GHz applications. It is expected that variation of the bias current for other frequency
applications will produce similar performance results.
R1
(ohms)
R2
(ohms)
Icq
(mA)
Vbias
(V)
68 150 600 +5
80 180 500 +5
101 300 400 +5
133 230 350 +5
167 230 300 +5
177 546 250 +5
0
1
2
3
4
5
6
20 21 22 23 24 25 26 27
EVM ( % )
Pout (dBm)
EVM vs. Pout vs. Icq
0
3
6
9
12
15
18
20 21 22 23 24 25 26 27
Efficiency (%)
Pout (dBm)
Efficiency vs. Pout vs. Icq
250 mA Icq
250 mA Icq
300 mA Icq
350 mA Icq
400 mA Icq
500 mA Icq
600 mA Icq
300 mA Icq
350 mA Icq
400 mA Icq
500 mA Icq
600 mA Icq
Data Sheet: Rev A 09/02/10 - 6 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
3.3 – 3.7 GHz Applications Note: Changing Icq Biasing Configurations at +3.3V
0
3
6
9
12
15
18
20 21 22 23 24 25 26 27
EVM ( %)
Pout (dBm)
EVM vs. Pout vs. Icq
0
4
8
12
16
20
24
20 21 22 23 24 25 26 27
Efficiency (%)
Pout (dBm)
Efficiency vs. Pout vs. Icq
400 mA Icq
500 mA Icq
400 mA Icq
500 mA Icq
OFDM, QAM-64, 54 Mb/S
F = 3.5 GHz
OFDM, QAM-64, 54 Mb/S
F = 3.5 GHz
OFDM, QAM-64, 54 Mb/S
F = 3.5 GHz
OFDM, QAM-64, 54 Mb/S
F = 3.5 GHz
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Pin Description
17
19
18
20
16
9
7
8
6
10
GND / NC
GND / NC
GND / NC
GND / NC
GND / NC
GND / NC
Vcc1
GND / NC
Vbias2
Iref2
Pin Symbol Description
1 Iref 1
Reference current into internal active bias current mirror. Current into Iref sets device
quiescent current. Also, can be used as on/off control. (for amp 1)
2 Vbias1 Voltage supply for active bias for amp 1. Connect to same supply voltage as Vcc1.
4, 5 RFin RF Input
3, 6, 7, 8, 9,
10, 14, 18, 20 GND/NC No internal connection. This pin can be grounded or N/C on PCB. Land pads should be
provided for PCB mounting integrity.
11, 12, 13 RFout RF Output
15 Vcc2 Supply Voltage for Amp2
16 Iref 2
Reference current into internal active bias current mirror. Current into Iref sets device
quiescent current. Also, can be used as on/off control. (for amp 2)
17 Vbias2 Voltage supply for active bias for amp 2. Connect to same supply voltage as Vcc2.
19 Vcc1 Supply Voltage for Amp1
Backside Paddle GND RF/DC Ground. Ensure good solder attach for best thermal and electrical performance.
Applications Information
PC Board Layout
PCB Material: 0.0147” Rogers Ultralam 2000, single layer,
1 oz Cu, εr = 2.45 Microstrip line details: width = .042”,
spacing = .050”.
The silkscreen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’,
etc. are used as place markers for critical tuning
components
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from company to company, careful process development is
recommended.
For further technical information, Refer to http://www.triquint.com/prodserv/more_info/default.aspx?prod_id=AH315
Data Sheet: Rev A 09/02/10 - 7 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Mechanical Information
Package Information and Dimensions
Mounting Configuration
N
otes:
1. All dimensions are in millimeters (inches). Angles
are in degrees
2. Ground/Thermal vias are critical for the proper
performance of this device. Vias should be .35mm
(#80/.135”) diameter drill and have a final plated
thru diameter of .25mm (.010”).
3. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
4. To ensure reliable operation, device ground paddle-
to-ground pad solder joint is critical
5. Add mounting screws near the part to fasten board to
a heat sink. Ensure that the ground/thermal via
region contacts the heat sink
6. Do not put solder mask on the backside of the PC
Board in the region where the board contacts the heat
sink.
7. RF trace width depends upon the PC board
construction and material
8. Use 1oz co
pp
er minimu
m
Lead-free/Green/RoHS-compliant.
Package pin plating - Annealed matte tin
over copper.
Compatible with lead-free (Tmax=260°C)
and lead (Tmax=245 °C) soldering processes.
The AH315-G will be marked with an
“AH315G” designator on the top surface of
the package. An alphanumeric lot code
(“XXXX”) is also marked below the part
designator.
Data Sheet: Rev A 09/02/10 - 8 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®
AH315
3.3 – 3.8 GHz WiMAX 2W Driver Amplifier
Product Compliance Information
ESD Information
ESD Rating: Class 1B
Value: Passes between 500 and 1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes between 1000V and 2000V
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-A114
MSL Rating
Level 2 at +260 °C convection reflow
JEDEC standard J-STD-020.
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.503.615.9000
Email: info-sales@tqs.com Fax: +1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev A 09/02/10 - 9 of 9 - Disclaimer: Subject to change without notice
© 2010 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network®