PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT PG2124TH L-BAND PA DRIVER AMPLIFIER DESCRIPTION The PG2124TH is GaAs MMIC for PA driver amplifier with variable gain function which were developed for WCDMA and another L-band application. The device can operate with 2.85 V, having the high gain and low distortion. FEATURES * Low operation voltage: VDD1 = VDD2 = VDD3 = +2.85 V * Low distortion: Padj1 = -50 dBc TYP. @VDD1 = VDD2 = VDD3 = +2.85 V, Pout = +8 dBm, VAGC = +2.5 V * Low operation current: IDD = 40 mA TYP. @VDD1 = VDD2 = VDD3 = +2.85 V, Pout = +8 dBm, VAGC = +2.5 V External input and output matching External input and output matching * Variable gain control function: G = 28 dB TYP. @VAGC = 0.5 to 2.5 V External input and output matching * 10-pin plastic TSSOP APPLICATION * Digital cellular: W-CDMA etc. ORDERING INFORMATION Part Number PG2124TH-E1 Package 10-pin plastic TSSOP Supplying Form * Embossed tape 12 mm wide * Pin 1 indicates pull-out direction of tape * Qty 2 kpcs / reel Remark To order evaluation samples, please contact your local NEC sales office. Part number for sample order: PG2124TH Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs HJ-FET. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P15441EJ1V0DS00 (1st edition) Date Published June 2001 NS CP(K) Printed in Japan (c) 2001 PG2124TH PIN CONNECTIONS Pin No. Connection Pin No. Connection 1 VDD1 6 GND 2 VAGC 7 VDD2 3 GND 8 GND (ATT) 4 Non-connection 9 GND 5 VDD3 and OUT 10 IN (Top View) 7 8 9 001 2124 6 10 (Bottom View) 5 5 4 3 2 2 1 1 (Top View) 6 6 5 4 7 7 4 3 8 8 3 9 9 2 10 10 1 ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Supply Voltage AGC Control Voltage Input Power Symbol Ratings Unit VDD1, 2, 3 6.0 V VAGC 6.0 V Pin 0 dBm Note 190 Total Power Dissipation Ptot mW Operating Ambient Temperature TA -30 to +85 C Storage Temperature Tstg -35 to +150 C Note Mounted on a 50 x 50 x 1.6 mm double copper clad epoxy glass PWB, TA = +85C 2 Preliminary Data Sheet P15441EJ1V0DS PG2124TH ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Supply Voltage Input Power AGC Control Voltage Symbol MIN. TYP. MAX. Unit VDD1, 2, 3 +2.7 +2.85 +3.0 V Pin - -30 -10 dBm VAGC 0.5 - 2.5 V ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C, VDD1 = VDD2 = VDD3 = +2.85 V, VAGC = +2.5 V, HPSK modulated single input, External input and output matching) Parameter Operating Frequency Symbol Test Conditions f MIN. TYP. MAX. Unit 1 920 - 1 980 MHz Power Gain Gp Pout = +8 dBm 25 30 - dB Total Current IDD Pout = +8 dBm - 40 55 mA Adjacent Channel Power Leakage 1 Padj1 Pout = +8 dBm, f = 5 MHz, 3.84 MHz band width - -50 -45 dBc Adjacent Channel Power Leakage 2 Padj2 Pout = +8 dBm, f = 10 MHz, 3.84 MHz band width - -60 -55 dBc Variable Gain Range G Pin = -30 dBm, VAGC = 0.5 to 2.5 V 25 28 - dB AGC Control Current IAGC Pout = +8 dBm - 200 250 A Noise Figure NF Small signal input - 4 - dB Preliminary Data Sheet P15441EJ1V0DS 3 PG2124TH EVALUATION CIRCUIT TA = +25C, VDD1 = VDD2 = VDD3 = +2.85 V, f = 1 950 MHz C2 VDD2 L2 C1 IN L1 10 9 1 2 8 7 6 3 4 5 L3 VDD1 C4 C5 VAGC EVALUATION BOARD 10p TSSOP AMP2 L1 C1 4 Symbol Values Part Number Maker C1 5 pF GRM39CH 050 C50 muRata C2, C3, C4 1 000 pF GRM39B 102 K50 muRata C5 1.5 pF GRM39CK 1R5 C50 muRata L1, L2 3.3 nH TFL0816-3N3 susumu L3 2.7 nH TFL0816-2N7 susumu L3 C3 Vagc OUT Vdd2 C2 L2 C4 C3 USING THE NEC EVALUATION BOARD IN Vdd1 VDD3 C5 Vdd3 OUT Preliminary Data Sheet P15441EJ1V0DS PG2124TH Output Power Pout (dBm) 16 50 IDD 14 30 VDD1,2,3 = 2.85 V, f = 1 950 MHz, VAGC = 2.5 V, 10 Padj1: f = 5 MHz Padj2: f = 10 MHz MOD: HPSK (single mode) -10 12 Pout 10 Padj1 8 -30 Padj2 6 -50 4 -30 -25 -20 -15 -70 -5 -10 Input Power Pin (dBm) GAIN vs. AGC CONTROL VOLTAGE 35 VDD1,2,3 = 2.85 V, f = 1 980 MHz, 30 VAGC control, Vector network 25 analyzer used Gain (dB) OUTPUT POWER, TOTAL CURRENT, ADJACENT CHANNEL POWER LEAKAGE1, 2 vs. INPUT POWER Total Current IDD (mA), Adjacent Channel Power Leakage1, 2 Padj1, Padj2 (dBc) TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C) 20 15 10 5 0 -5 0.0 0.5 1.0 1.5 2.0 2.5 AGC Control Voltage VAGC (V) NOISE FIGURE vs. GAIN 25 VDD1,2,3 = 2.85 V, f = 1 950 MHz, VAGC control Noise Figure NF (dB) 20 15 10 5 0 -5 0 5 10 15 20 25 30 35 Gain (dB) Remark The graphs indicate nominal characteristics. Preliminary Data Sheet P15441EJ1V0DS 5 PG2124TH PACKAGE DIMENSIONS 10-PIN PLASTIC TSSOP (UNIT: mm) 2.750.15 (0.1) 0.350.15 (2.2) 3.20.2 0.150.1 (0.9) (0.5) (10 - 0.2) 1.050.15 Remark ( ): reference 6 Preliminary Data Sheet P15441EJ1V0DS -10 to 20 detail of lead end PG2124TH RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235C or below Time: 30 seconds or less (at 210C) Note Count: 3, Exposure limit: None IR35-00-3 VPS Package peak temperature: 215C or below Time: 40 seconds or less (at 200C) Note Count: 3, Exposure limit: None VP15-00-3 Wave Soldering Soldering bath temperature: 260C or below Time: 10 seconds or less Note Count: 1, Exposure limit: None WS60-00-1 Partial Heating Pin temperature: 300C or below Time: 3 seconds or less (per side of device) Note Exposure limit: None - Note After opening the dry pack, keep it in a place below 25C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E). Preliminary Data Sheet P15441EJ1V0DS 7 PG2124TH SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. * Do not destroy or burn the product. * Do not cut or cleave off any part of the product. * Do not crush or chemically dissolve the product. * Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. * The information in this document is current as of June, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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