PRELIMINARY DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15441EJ1V0DS00 (1st edition)
Date Published June 2001 NS CP(K)
Printed in Japan
GaAs I NTEGRATED CIRCUIT
µ
µµ
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PG2124TH
L-BAND PA DRIVER AMPLIFIER
©
2001
DESCRIPTION
The
µ
PG2124TH is GaAs MMIC for PA driver amplifier with variable gain function which were developed for W-
CDMA and another L-band application. The device can operate with 2.85 V, having the high gain and low distortion.
FEATURES
• Low operation voltage: VDD1 = VDD2 = VDD3 = +2.85 V
• Low distortion: Padj1 = −50 dBc TYP. @VDD1 = VDD2 = VDD3 = +2.85 V, Pout = +8 dBm , VAGC = +2.5 V
External input and output matching
• Low operation current: IDD = 40 mA TYP. @VDD1 = VDD2 = VDD3 = +2.85 V, Pout = +8 dBm, VAGC = +2.5 V
External input and output matching
• Variable gain control function:
∆
G = 28 dB TYP. @VAGC = 0.5 to 2.5 V
External input and output matching
• 10-pin plastic TSSOP
APPLICATION
• Digital cellular: W-CDMA etc.
ORDERING INFORMATION
Part Number Package Supplyi ng Form
µ
PG2124TH-E1 10-pin plast i c TSSOP • Emboss ed tape 12 mm wide
• Pin 1 indicates pul l -out di rection of tape
• Qty 2 kpcs / reel
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order:
µ
PG2124TH
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
Preliminary Data Sheet P15441EJ1V0DS
2
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PG2124TH
PIN CONNECTIONS
Pin No. Connection Pin No. Connection
1V
DD1 6GND
2V
AGC 7V
DD2
3 GND 8 GND (ATT)
4 Non-connection 9 GND
5V
DD3 and OUT 10 IN
10
8
6
1
92
3
5
74
(Top View) (Bottom View) (Top View)
2124
001
10
8
6
1
92
3
5
74
1
3
5
10
29
8
6
47
ABSOLUTE MAXIMUM RATINGS (TA = +25°
°°
°C)
Parameter Symbol Ratings Unit
Supply V ol tage VDD1, 2, 3 6.0 V
AGC Control Voltage VAGC 6.0 V
Input Power Pin 0dBm
Total Power Dissipation Ptot 190Note mW
Operating Ambient Temperature TA−30 to +85 °C
Storage Temperat ure Tstg −35 to +150 °C
Note Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85°C
Preliminary Data Sheet P15441EJ1V0DS 3
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PG2124TH
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C)
Parameter Symbol MIN. TYP. MAX. Unit
Supply V ol tage VDD1, 2, 3 +2.7 +2.85 +3.0 V
Input Power Pin −−
30 −10 dBm
AGC Control Voltage VAGC 0.5 −2.5 V
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25°
°°
°C, VDD1 = VDD2 = VDD3 = +2.85 V, VAGC = +2.5 V, HP SK modulated single
input, External input and output matching)
Parameter Symbol Test Condit i ons MI N. TYP. MAX. Unit
Operating Frequency f 1 920 −1 980 MHz
Power Gain GpPout = +8 dBm 25 30 −dB
Total Current IDD Pout = +8 dBm −40 55 mA
Adjacent Channel Power Leakage 1 Padj1 Pout = +8 dBm,
∆
f = ±5 MHz, 3.84 MHz band width −−
50 −45 dBc
Adjacent Channel Power Leakage 2 Padj2 Pout = +8 dBm,
∆
f = ±10 MHz, 3.84 MHz band width −−
60 −55 dBc
Variable Gain Range
∆
GP
in = −30 dBm, V AGC = 0.5 to 2.5 V 25 28 −dB
AGC Control Current IAGC Pout = +8 dBm −200 250
µ
A
Noise Figure NF Sm al l signal input −4−dB
Preliminary Data Sheet P15441EJ1V0DS
4
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PG2124TH
EVALUATION CIRCUIT
TA = +25°C, VDD1 = VDD2 = VDD3 = +2.85 V, f = 1 950 MHz
IN
V
DD2
V
DD1
V
DD3
V
AGC
OUT
L
1
L
2
C
2
C
1
C
5
C
4
C
3
L
3
10 8 69 7
13524
EVALUATION BOARD USING THE NEC EVALUATION BOARD
L
1
L
2
L
3
C
2
C
1
C
4
C
3
C
5
10p TSSOP AMP2 Vdd2
IN
Vdd1
Vagc Vdd3 OUT
Symbol Values Part Number Maker
C15 pF GRM39CH 050 C50 muRata
C2, C3, C41 000 pF GRM39B 102 K 50 muRata
C51.5 pF GRM39CK 1R5 C50 muRata
L1, L23.3 nH TFL0816-3N3 susumu
L32.7 nH TFL0816-2N7 sus um u
Preliminary Data Sheet P15441EJ1V0DS 5
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PG2124TH
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°
°°
°C)
GAIN vs. AGC CONTROL VOLTAGE
NOISE FIGURE vs. GAIN
LEAKAGE1, 2 vs. INPUT POWER
OUTPUT POWER, TOTAL CURRENT,
Output Power P
out
(dBm)
Adjacent Channel Power Leakage1, 2 P
adj1
, P
adj2
(dBc)
Total Current I
DD
(mA),
Gain (dB)
Noise Figure NF (dB)
AGC Control Voltage V
AGC
(V)
Gain (dB)
Input Power P
in
(dBm)
–5
0
5
10
15
20
25
0
5
10
15
20
25
30
35
4
6
8
10
12
14
16
–70
–50
–30
–10
10
30
50
–5–10–15–20–25–30 2.52.01.51.0
151050–5 20 25 30 35
0.50.0
I
DD
P
out
P
adj1
P
adj2
V
DD1,2,3
= 2.85 V,
f = 1 950 MHz, V
AGC
= 2.5 V,
P
adj1
: f = ±5 MHz
P
adj2
: f = ±10 MHz
MOD: HPSK (single mode)
V
DD1,2,3
= 2.85 V,
f = 1 980 MHz,
V
AGC
control,
Vector network
analyzer used
∆
∆
V
DD1,2,3
= 2.85 V,
f = 1 950 MHz,
V
AGC
control
ADJACENT CHANNEL POWER
Remark The graphs indicate nominal characteristics.
Preliminary Data Sheet P15441EJ1V0DS
6
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PG2124TH
PACKAGE DIMENSIONS
10-PIN PLASTIC TSSOP (UNIT: mm)
detail of lead end
–10˚ to 20˚
(10 - 0.2)
(0.5)
2.75±0.15
(2.2)
3.2±0.2
1.05±0.15
(0.9)
0.35±0.15
0.15±0.1
(0.1)
Remark ( ): reference
Preliminary Data Sheet P15441EJ1V0DS 7
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PG2124TH
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Condi tions Recommended Condition Sy m bol
Infrared Refl ow Package peak tem perature: 235°C or below
Time: 30 s econds or les s (at 210°C)
Count: 3, Exposure l i m i t: NoneNote
IR35-00-3
VPS Package peak temperature: 215°C or below
Time: 40 s econds or les s (at 200°C)
Count: 3, Exposure l i m i t: NoneNote
VP15-00-3
Wave Solderi ng Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure l i m i t: NoneNote
WS60-00-1
Partial Heating Pin tem perat ure: 300°C or below
Time: 3 s econds or les s (per side of device)
Exposure l i mit: NoneNote
–
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
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PG2124TH
SAFETY INFORMATION ON THIS PRODUCT
Caution GaAs Products The product contains gallium arsenide, GaAs.
GaAs vapor and powder are hazardous t o hum an heal t h i f inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave of f any part of the product.
• Do not crush or chemic al l y diss ol ve the product.
• Do not put the product in t he m outh.
Follow related l aws and ordinances for dispos al . The product should be excluded from general
industri al was te or household garbage.
M8E 00. 4
The information in this document is current as of June, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
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