~ MOSPOWER Cross Reference List HEWLETT-PACKARD . Industry BVpss 'DS(on) Siliconix BVpss 'DS(on) Part No. (Volts) (Ohms) Package Equivalent (Volts) (Ohms) HPWR-6501 450 0.85 TO-3 IRF 444 450 0.85 HPWR-6502 400 0.74 TO-3 IRF340 400 0.55 HPWR-6503 450 1.0 TO-3 IRF 444 450 0.85 HPWR-6504 400 1.0 TO-3 VN4O01A 400 1:0 HITACHI 28K132 100 1.71 TO-3 IRF 122 100 0.4 28K133 120 1:71 TO-3 IRF223 150 1.2 28K134 440 v71 TO-3 IRF223 150 1.2 28K135 160 1:71 TO-3 IRF 222 200 1.2 | 28K175 180 171 TO-3 (RF222 200 1.2 2SK176 200 1.71 TO-3 IRF222 200 1.2 28K220 160 TO-3 _ 2SK221 200 TO-3 _ 2SK259 350 3.0 TO-3 IRF323 350 25 2SK260 400 3.0 T0-3 IRF322 400 25 28/47 100 1:71 TO-3 _ 2548 120 1.71 TO-3 _ _ 2849 140 1:71 TO-3 _ 28J50 160 1.71 TO-3 _ - INTERNATIONAL RECTIFIER IRF120 100 0.30 TO-3 IRF120 _ ~ IRF121 60 0.30 TO-3 IRF121 _ IRF122 100 0.40 TO-3 IRF 122 _ _ IRF123 60 0.40 TO-3 IRF123 IRF 130 100 0.18 TO-3 IRF130 IRF131 60 0.18 TO-3 iRF131 _ _ (RF 132 100 0.25 TO-3 IRF132 _ _ IRF133 60 0.25 TO-3 IRF133 ~ IRF 140 100 0.085 TO-3 IRF140 IRF141 60 0.085 TO-3 IRF 141 IRF 142 100 0.11 TO-3 IRF 142 _ IRF 143 60 0.11 TO-3 IRF 143 _ _ IRF 150 100 0.055 TO-3 IRF 150 IRF151 60 0.055 TO-3 i{RF151 IRF152 100 0.08 TO-3 iRF152 _ {RF153 60 0.08 TO-3 IRF153 _ (RF220 200 08 TO-3 IRF220 IRF221 150 08 TO-3 IRF221 _ IRF222 200 1.2 TO-3 IRF222 _ IRF223 450 1.2 TO-3 IRF223 _ IRF230 200 0.4 TO-3 IRF230 _ IRF231 150 0.4 TO-3 IRF231 IRF232 200 0.6 TO-3 iRF232 _ IRF233 150 0.6 TO-3 IRF233 ~ _ IRF240 200 0.18 TO-3 IRF240 IRF241 150 0.18 TO-3 IRF241 _ (RF 242 200 0.22 TO-3 IRF 242 IRF243 150 0.22 TO-3 IRF243 _ IRF 250 200 0.085 TO-3 IRF250 _ IRF251 150 0.085 TO-3 IRF251 _ IRF252 200 0.120 TO-3 IRF252 _ IRF 253 150 0.120 TO-3 iRF253 IRF320 400 1.8 TO-3 IRF320 IRF321 350 18 TO-3 IRF321 ~ IRF322 400 25 TO-3 IRF322 ~ _ IRF323 350 25 TO-3 IRF323 _ IRF330 400 1.0 TO-3 IRF330 _ IRF331 350 1.0 TO-3 IRF331 _ IRF332 400 15 TO-3 IRF332 IRF333 350 15 TO-3 IRF333 _ ~ IRF340 400 0.55 TO-3 IRF340 IRF341 350 0.55 TO-3 IRF341 _ _ IRF342 400 0.80 TO-3 IRF342 IRE343 350 0.80 TO-3 IRF343 IRF350 400 0.3 TO-3 IRF350 _ ~ IRF351 350 0.3 TO-3 IRF351 _ IRF352 400 0.4 TO-3 IRF 352 IRF353 350 0.4 TO-3 IRF353 _ Siliconix 1-13 {S1] SOUSISJOY SSOLD YIMOdSOWMOSPOWER Cross. Reference List (Contd) INTERSIL (Cont'd) Industry BVpss DS(on) Siliconix BVpss DS(on) Part No. (Volts) (Ohms) Package Equivalent (Volts) (Ohms) IVN6100TNU 500 15.0 TO-39 IVN6200CND 40 0.35 TO-220 VNO401D 40 0.15 IVN6200CNE 60 0.25 TO-220 IRF533 60 0.25 IVN6200CNF 80 0.25 TO-220 VNO801D 80 0.25 IVN6200CNH 100 0.25 TO-220 VN1001D 100 0.25 IVN6200CNM 200 0.5 TO-220 IRF630 200 0.4 IVN6200GNP 250 05 TO-220 IVN6200CGNR 395 25 TO-220 VN4001D 400 1.5 IVN6200CNS 400 15 TO-220 VN4001D 400 15 IVN6200CNT 450 1.5 TO-220 VN4501D 450 15 IVN6200CNU 500 2.0 TO-220 VN5001D 500 15 IVN6200KND 40 0.25 TO-3 VNO401A 40 0.15 IVN6200KNE 60 0.25 TO-3 IRF133 60 0.25 IVN6200KNF 80 0.25 TO-3 VNO801A 80 0.25 IVN6200KNH 100 0.25 TO-3 VN1001A 100 0.25 IVN6200KNM 200 05 TO-3 IRF230 200 0.4 IVN6200KNP 250 0.5 TO-3 IVN6200KNS 400 1.5 TO-3 VN4001A 400 1.5 IVN6200KNT 450 15 TO-3 VNABO1A 450 15 IVN6200KNU 500 2.0 TO-3 VN5000A 500 15 IVN6300ANE 60 75 TO-237 VN2222LM 60 75 IVN6300ANF 80 75 10-237 IVN6300ANH 100 75 TO-237 = = IVN6300ANM 200 25.0 TO-237 VN2410M 240 10.0 IVN6300ANP 250 25.0 TO-237 VN2410M 240 10.0 IVN6300ANS 400 75.0 TO-237 ~ IVN6300ANT 450 75.0 10-237 ~ ~ IVN6300ANU 500 75.0 TO-237 IVN6300SNE 60 75 TO-52 VN1OLE 60 5.0 IVN6300SNF 80 75 TO-52 ~ IVN6300SNH 100 75 TO-52 _ IVN6300SNM 200 25.0 TO-52 _ IVN6300SNP 250 25.0 TO-52 - _ IVN6300SNS 400 75.0 TO-52 IVN6300SNT 450 75.0 TO-52 _~ _ _ IVN6300SNU 500 75.0 TO-52 _ MOTOROLA MTM1NQ5 950 10.0 TO-3 _ _ MTM1N100 1000 10.0 T0-3 MTM2N45 450 4.0 TO-3 IRF423 450 4.0 MTM2N50 500 4.0 TO-3 IRF 422 500 4.0 MTM2N85 850 8.0 10-3 me . MTM2N90 900 8.0 TO-3 = MTM3N35 350 3.3 TO-3 IRF323 350 25 MTM3N40 400 3.3 TO-3 IRF 322 400 25 MTM3N55 550 25 TO-3 MTM3N60 600 2.5 TO-3 MTM4N45 450 2.0 TO-3 VN4502A 450 2.0 MTM4N50 500 2.0 TO-3 VN5002A 500 20 MTM5N35 350 1.5 TO-3 VN3501A 350 15 MTM5N40 400 15 TO-3 VN4001A 400 15 MTM6N55 550 15 TO-3 _ = MTM6N60 600 15 TO-3 ~ MTM7N45 450 12 TO-3 IRF443 450 tA MTM7N50 500 1.2 TO-3 IRF442 500 11 MTM8N12 120 0.5 TO-3 MTM8N15 150 0.5 TO-3 ~ MTM8N18 180 0.4 TO-3 - ~ MTM8N20 200 0.4 TO-3 _ = MTM8N35 350 0.8 TO-3 IRF343 350 0.8 MTM8N40 400 08 TO-3 IRF 342 400 0.8 MTM10N08 80 0.33 TO-3 IRF 120 100 0.3 MTM10N10 100 0.33 TO-3 IRF 120 100 0.3 MTM10N12 120 0.3 TO-3 MTM10N15 150 0.3 TO-3 MTM12NO05 50 0.2 TO-3. VNOB01A 60 0.15 MTM12N06 60 0.2 TO-3 VNO601A 60 0.15 MTM12N08 80 0.25 TO-3 VNO801A 80 0.25 MTM12N10 100 0.25 TO-3 VN1001A 100 0.25 Siliconix 1-17 jSI] SOUSGIOJOY SSOID YIMOdSOW~ MOSPOWER Cross Reference List (Cont) SIEMENS (Cont'd) Industry BVpss fDS(on) Siliconix . BVpss 'DS(on) Part No. (Volts) (Ohms), PACKAGE | Equivalent (Volts) (Ohms) BUZ 14 50 0.04 TO-3 _ _ _ BUZ 15 50 0.03 TO-3 oo _ BUZ 20 100 0.20 TO-220 VN1000D 100 0.18 BUZ 21 100 0.10 TO-220 IRF522 100 0.4 BUZ 23 100 0.20 TO-3 VN1000A 100 0.18 BUZ 24 100 0.06 TO-3 _ _ _ BUZ 25 100 Q.10 TO-3 IRF540 100 0.085. BUZ 30 200 0.75 TO-220 IRF632 200 0.6 BUZ 31 200 0.20 TO-220 IRF640 200 0.18 BUZ 33. 200 0.75 TO-3 IRF232 200 0.6 BUZ 34 200 0.20 TO-3 IRF240 200 0.18 BUZ 40 500 45 TO-220 IRF822 500 4.0 BUZ 41 500 1.1 TOQ-220 IRF842 500 1.1 BUZ 43 500 45 TO-3 - IRF422 500 40 BUZ 44 500 1.1 TO-3 IRF442 500 1.1 BUZ 45 500 0.6 TO-3 IRF452 500 0.5 BUZ 50 1000 3.5 TO-220 _ _ _ BUZ 53 1000 3.5 TO-3 | _ _ _ BUZ 54 1000 2.0 TO-3 _ _ _ BUZ 80 800 2.6 TO-220 _ _ _ BUZ 83 800 2.6 TO-3 _ _ _ BUZ 84 800 1.3 TO-3 - _ ~ SONY 28J54 210 1.0 TO~220 _ _ _ 28K173 210 1.0 TO-220 IRF232 200V 0.6 SUPERTEX VNO104N1 40 4.0 TO-3 VN67AA 60 3.5 VNO104N2 40 4.0 TO-39 VN67AB 60 3.5 VNO104N3 40 4.0 TO-92 _ _ _ VNO104N4 40 4.0. TO-202 VN46AF 40 3.0 VNO104N5 40 4.0 TO+220 VN46AD 40 3.0 VNO104N6 40 4.0 DIP VQ1004J** 60 3.5 VNO106N1 60 4.0. TO-3 VN67AA 60 3.5 VNO106N2 60 4.0 TO-39 VN67AB 60 3.5 VNO106N3 60 4.0 TO-92 _ _ _ VNO106N4 60 4.0 TO-202 VN67AF 60 3.5 VNO106N5 60 4.0 TO-220 VN67AD 60 3.5 VNO106N6 60 4.0 DIP VQ1004J** 60 3.5 VNO108N1 80 4.0 TO-3 2N6658 90 4.0 VNO108N2 80 4.0 TO-39 2N6661 90 4.0 VN0108N3 80 4.0 TO-92 _ _ _ VNO108N4 80 4.0 TO-202 VN88AF 80 4.0 VNO108N5 80 4.0 TO-220 VN88AD 80 4.0 VNO108N6 80 4.0 DIP VQ1006J** 90 4.5 VNO109N14 90 40 TO-3 2N6653, 90 4.0 VNO109N2 90 4.0 TO-39 2N6661 90 4.0 VN0O109N3 90 4.0 TO-92 _ _ _ VNO109N4 90 40 TO-202 _ _ _ VNO109N5 90 4.0 TO-220 . _ _ VNO109N6 90 4.0 DIP VQ1006J** 90 45. VN0204N1 40 2.0 TO-3 _ _ _ VNO204N2 40 2.0 TO-39 _ _ - VNO204N5 40 2.0 TO-220 _ _ _ VNO204N6 40 2.0 DIP _ _ _ VNO206N1 60 2.0 TO-3 _ _ _- VNO206N2 60 2.0 TO-39 _ _ _ VNO206N5 - 60 2.0 TO-220 _- _ _ VNO206N6 60 2.0 DIP _ - - VNO208N1 80 2.0 TO-3 _ _ _ VNO208N2 80 2.0 TO-39 ~_ _ _ VNO208N5 80 2.0 TO-220 _ _ _ VNO208N6 80 2.0 DIP _ _ _ VNO209N 1 90 2.0 TO-3 _ _ _ VNO209N2 90 2.0 TO-39 _ _ _- VNO209N5 90 2.0 TO-220 _ _ _ VNO209N6 90 2.0 DIP _ _ VNO330N1 300 3.0 TO-3 IRF323 350 2.5 VNO330N2 300 3.0 TO-39 _ - _- **Refer to data sheet for pinout differences Siliconix IST] QOUSIOJOY SSOID UIMOdSOWMOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 SiliconixIRF320 = IRF324 = IRF322 = IRF323 IRF720 = IRF724 = IRF722 IRF723 IRF320 = IRF324 = IRF322 = IRF323 a IRF720 = IRF724 = IRF722 = IRF723 Siliconix 400Vmosrower Advanced information These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. FEATURES a High Voltage a No Second Breakdown a High input Impedance a Internal Drain-Source Diode a Very Rugged: Excellent SOA = Extremely Fast Switching BENEFITS Reduced Component Count a Improved Performance a Simpler Designs = Improved Reliability Product Summary Part Number BVoss Rosion) lp Package IRF320 400V 1.80 3A IRF321 350V - TO-3 IRF322 400V 2.5Q 2.5A IRF323 350V IRF720 400V IRF721 350V 180 3A TO-220AB IRF722 400V 2.52 2.5A IRF723 350V wl ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage IRF320, 322, 720, 722.0... cece e eee e ee ee eenee IRF321, 323, 721, 723 2... c cece cence er eneeees Drain-Gate Voltage IRF320, 322, 720, 722 00... cece cece cece ne nee eee (RF321, 323, 721, 723 oo cece cece e een e eee reee Drain Current Continuous ~ IRF320, 321, 720,721... cee eee Drain Current Pulsed (80us to 300us, 1% duty cycle).............0..0.. +12A Gate Current (Peak) ............ ccc cece cece nec eee tenors t1A Gate-Source Voltage 2.0... cc cess cere cece eesen sete ere eeenee +40V Total Power Dissipation 2.2.0... 0... ccc cece eens 40W Linear Derating Factor ...........0 cc ccc ccceeee eters 0.32 W/C Operating and Storage IRF322, 323, 722,723 2... eee tees Temperature ........6. 0 ccc cece cence er neee -55C to + 150C 0.450 (11.43) 290 0.875 = om 95, He 0.250 , (7,39) 080 (2.04) eum (22.225) in| (6.35) O55 (7,59) 15.85) Te 533) 0.135 wax MAX (6.85) (3.429) c 1 t T 0.043 /1.092/ j ao SEATING o038 70.965) Mine Boo 112.70) PLANE 8 a7 1.197 (30,408) 7 pia 2183 (4.08 Ps a55 Foo ROR) 0.939 (3.54) 0.675 (17.145) VAT? (28.896) a5 T6686 716.637) . tt 14.775) MAX I oe ag ~ BOTH ENDS 070 (EM) 22.69) | 0.40 (77.176) ee B00 (19.66) 0.420 70.668) & Vy tT 1 \ / T4 SP 0.161 /4.089) 1 250] 045 (1.18) 0.228 (5.715) \ ose (3.835) SA . . . 2 R MAX BO (14.23) 9.208 16.207) portom view (73-335) [~ 386 1651) I PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 Source CASE Drain PIN 2 & TAB Drain PIN 3 Source 2-18 SiliconixELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Part Parameter Number Min Typ. | Max Unit Test Conditions Static IRF320, 322 400 Drain-Source Breakdown IRF720, 722 BY, = Vas = 0, Ip = 250 P85 Voltage IRF321,923 | aa v__ | Yas=6. !o=250HA IRF721, 723 Vestn Gate Threshold Voitage All 2.0 40 Vv Vos = Ves, 'p = 1.0 mA | less Gate-Body Leakage Alt +100 nA Vas = + 20V, Vos =9 ; Zero Gate Voltage Drain All 0.1 | 025 | a Vos= Rated VpgVas=O SS Gurrent 02 | 10 Vig = Rated Vog Vag = 0, Te = 125C Ipjon) ~~: On-Statte Drain Current All 3.0 A Vos = 25V, Vag = 10V (Note 1) IRF320, 321 as | te Static Drain-Source On-State IRF720, 721 : : = =1, Toston) Resistance IRFa22, 323 2 Ves = 10V, Ip = 1.5A (Note 1) IRF722, 723 18 | 25 Dynamic Os Forward Transconductance All 1.0 2.0 $s Vog= 25V,15=1.5A (Note 1) Ciss Input Capacitance 450 600 Coss Output Capacitance All 100 200 pF Veg = 0, Vos = 25V, f= 1 MHz Cisse Reverse Transfer Capacitance 20 40 tajon) =: Turn-On Delay Time All 20 40 t, Rise Time All 25 50 Vop = 200V, [p= 1.5A, R, = 1302, ns tyoiy) Turn-Otf Delay Time All so | 100 Rg = 252, (Fig. 1) ty Fail Time oe AN 25 50 Drain-Source Diode Characteristics Vsp Forward On Voltage All -1.3 v lg =-3A Veg = 0 (Note 1) tr Reverse Recovery Time All 400 ns lp =-3A, Ves = 0, di/dt = 100A/us (Fig. 1) Note 1: Pulse test 80 xs to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circuit $A\\A 50Q di/dt Adjust (1-27 uH) | + 5 TO S0uF 7 | 1N4993 A # lpkyAdiust , Rgen 6 | ~ Lud | }le Ro ses | 2400 iN4001 20v 2 + | 1 | , | | 4000uUF Sex 3 +>} { { - | | | circuit = | R $0252 PULSE UNDER L$ 0.0%H [generaTon| [TEST 4 PW. = 1 ys Cg < 50 pF 14 + ig WV DUTY CYCLE = 1% 14723 low UA SCOPE FROM TRIGGER CKT "7 Siliconix cZidl = CcZddl = boZddl = OZ cedal = ZeCsal = boda = OEIal