NPN SILICON PLANAR EPITAXIAL TRANSISTORS I Pies MPS6512 thru' MPS6515 are NPN silicon planar CASE _TO-92A epitaxial transistors designed for general purpose amplifier applications and for com- plementary circuitry. EBc ABSOLUTE MAXIMUM RATINGS MPS6512/3 MPS6514/5 Collector-Emitter Voltage VCEO 30V 25V Collector-Base Voltage VCBO 40V 40V Emitter-Base Voltage VEBO AV 4V Collector Current Ic 100mA 100mA Total Power Dissipation @ TA=25C Ptot 350mW 350mW @ Tc=25C 1lW lW Operating Junction & Storage Temperature Tj,Tstg -55 to +150C ELECTRICAL CHARACTERISTICS ("225C unless otherwise noted) c PARAMETER SYMBOL MIN TYP MAX {UNIT|) TEST CONDITIONS Collector-Emitter MPS6512/3 BVCEO 30 | V Ic=0.5mA Ip=0 Breakdown Voltage MPS6514/5 25 V Emitter-Base Breakdown BVEBO 4 Vv IE=1l0pA Ic=0 Voltage Collector Cutoff Current ICBO 50 nA VCB=30V IF=0 Ll | pA | TA=60C VCB=30V IE=0 Collector-Emitter Saturation VCE (SAT) 0.5 | V Ic=50mA IB=5mA Voltage D.C. Current Gain MPS6512 {Hee 50 100 Ic=2mA VCE=1OV MPS 6513 90 180 MPS6514 150 300 / MPS6515 to 250 500 D.C. Current Gain ~MPS6512 _ HFE * 30 Ic=100mA_ VCE=LOV MPS6513 60 MPS6514 90 MPS6515 150 Current Gain-Bandwidth Product |fT 150 MHz | IC=2mA VCE=10V _ 250 MHz | Ic=lOmA. VcE=10V Output Capacitance Cob _3.5 | pF {| VCB=10V__ f=100kHz | ME MICRO ELECTRONICS LID. #}4 BE A5) , P.T.O. ME 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex: 43510 Micro a P.O. Boxt9477, Kwun Tong. Tel: 3 -430181 6 ,3-893363, 3-892423, 3-898224 ' FAX: 3410321 eds tewT Le unless otherwise noted) C =25 ELECTRICAL CHARACTERISTICS (A 1% 0.3ms, Duty Cycle ni > Zz wo + oO it GMN eS a aA OL - O 20 a OC x a cia Zz oON oO qouanzr oo OO] - 32x x OO HN#YN Ee) as oe Cr rn IL W RA es tu Ono oo ke Hero Qe e et a z so Z ao ca N z ! = _ oO a ta = Zz ml ~ tJ -_ ti o = u < 5 [a4 D << cA a Le n vd No * Pulse Test Pulse Width