Power Transistors
1
Publication date: March 2003 SJD00079BED
2SB1503
Silicon PNP epitaxial planar type darlington
For power amplification
Complementary to 2SD2276
■Features
•Optimum for 110 W HiFi output
•High forward current transfer ratio hFE
•Low collector-emitter saturation voltage VCE(sat)
■Absolute Maximum Ratings TC = 25°C
■Electrical Characteristics TC = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −160 V
Collector-emitter voltage (Base open) VCEO −140 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−8A
Peak collector current ICP −15 A
Collector power dissipation PC120 W
Ta = 25°C 3.5
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Internal Connection
B
C
E
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −30 mA, IB = 0 −140 V
Collector-base cutoff current (Emitter open)
ICBO VCB = −160 V, IE = 0 −100 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −140 V, IB = 0 −100 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = −5 V, IC = 0 −100 µA
Forward current transfer ratio hFE1 VCE = −5 V, IC = −1 A 2
000
hFE2 *VCE = −5 V, IC = −7 A 5
000 30
000
Collector-emitter saturation voltage VCE(sat) IC = −7 A, IB = −7 mA −2.5 V
Base-emitter saturation voltage VBE(sat) IC = −7 A, IB = −7 mA −3.0 V
Transition frequency fTVCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz
Turn-on time ton IC = −7 A, IB1 = −7 mA, IB2 = 7 mA 1.0 µs
Storage time tstg VCC = −50 V 1.5 µs
Fall time tf1.2 µs
20.0
±0.5
2.0
±0.3
3.0
±0.3
1.0
±0.2
5.45
±0.3
10.9
±0.5
123
26.0
±0.5
(10.0)
(2.5)
Solder Dip
(6.0)
(4.0)
(2.0)
(1.5)
(1.5)
20.0
±0.5
5.0
±0.3
φ 3.3
±0.2
(1.5)
2.7
±0.3
0.6
±0.2
(3.0)
(3.0)
(2.0)
Unit: mm
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Rank Q S P
hFE2 5
000 to 15
000 7
000 to 21
000 8
000 to 30
000
2SB1503
2SJD00079BED
VBE(sat) IChFE ICCob VCB
PC TaIC VCE VCE(sat) IC
ton , tstg , tf ICSafe operation area
00 16040 12080
50
150
100
200
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(P
C
=3.5W)
(1)
(2)
(3)
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
00−12−2−10−4−8−6
−12
−10
−8
−6
−4
−2
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
T
C
=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–1mA
IB=–2mA
− 0.1
−100
−10
−1
− 0.1 −1−10 −100
IC/IB=1000
25˚C
–25˚C
T
C
=100˚C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
− 0.1
− 0.1 −1−10 −100
−10
−1
−100
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (A)
I
C
/I
B
=1000
TC=–25˚C
25˚C
100˚C
− 0.01 − 0.1 −1−10
10
10
2
10
3
10
4
10
5
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=–5V
TC=100˚C
25˚C
–25˚C
−1−10 −100
1
1
000
100
10
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25˚C
0−16−4−12−8
0.01
0.1
1
10
100
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(µs)
Collector current I
C
(A)
tstg
ton
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(–IB1=IB2)
VCC=–50V
TC=25˚C
− 0.01
−1
− 0.1
−1
−10
−100
−10 −100
−1
000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
t=10ms
t=1ms
I
CP
I
C
Non repetitive pulse
T
C
=25˚C
DC
2SB1503
3
SJD00079BED
Rth t
10
−1
1
10
10
3
10
2
10
−3
10
4
10
3
10
2
10110
−1
10
−2
Time t (s)
Thermal resistance Rth (°C/W)
(1)
(2)
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1)P
T
=10V×0.3A(3W) and without heat sink
(2)P
T
=10V×1.0A(10W) and with a 100×100×2mm Al heat sink
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and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
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electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
•Any applications other than the standard applications intended.
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
