2SD2707
/
2SD2654
/
2SD2351
/
2SD2226K
/
2SD2227S
Transistors
Rev.A 1/3
General Purpose Transistor (50V, 0.15A)
2SD2707
/
2SD2654
/
2SD2351
/
2SD2226K
/
2SD2227S
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (VCBO=12V)
3) Low saturation volt age.
(T yp. V CE(sat)=0.3V at IC/IB=50mA/5mA)
zAbsolute maximum ratings (Ta=25°C)
Storage temperature
Junction temperature
Collector current
Emitter-base voltage
Collector-emitter voltage
Collector-base voltage
Collector power
dissipation
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
50
12
0.15
0.2
0.2
0.15
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)∗
W
0.3
2SD2351, 2SD2226K
2SD2654, 2SD2707
2SD2227S
°C
°C
∗Single
pulse Pw=100ms
zPackaging specifications and hFE
Type 2SD2351
UMT3
VW
BJ∗
T106
3000
2SD2654
EMT3
VW
BJ∗
TL
3000
2SD2707
VMT3
VW
BJ∗
T2L
8000
2SD2226K
SMT3
VW
BJ∗
T146
3000
2SD2227S
SPT
VW
−
TP
5000
∗
Denotes
h
FE
package
h
FE
Marking
Code
Basic ordering unit (pleces)
zExternal dimensions (Unit : mm)
(1) Emitter
(2) Base
(3) Collector
(1) Base
(2) Emitter
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.6
1.0
0.3
0.8
(2)
0.50.5
(3)
0.2
(1)
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Each lead has same dimensions
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(3)
0.9
0.7 0.2
0.65
(2)
2.0
1.3
(1)
0.65
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
0.8
0.15
0~0.1
0.3Min.
1.1
(2)(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95 0.95
ROHM : SPT
EIAJ : SC-72 (1) Emitter
(2) Collector
(3) Base
Taping specifications
0.45
2.5
(1) (2) (3)
(15Min.)
5
3
3Min.
0.45
0.5
42
ROHM : EMT3
EIAJ : SC-75A
ROHM : EMT3
ROHM : UMT3
EIAJ : SC-70
2SD2654
2SD2707
2SD2351
2SD2226K
2SD2227S
(3)
0.32
0.8
1.2
0.13 0.5
0.22
0.40.4
1.2
0.80.2 0.2
(2)
(1)
2SD2707
/
2SD2654
/
2SD2351
/
2SD2226K
/
2SD2227S
Transistors
Rev.A 2/3
zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
60
50
12
−
−
−
−
−
−
−
−
−
−
−
250
3.5
−
−
−
0.3
0.3
0.3
−
−
V
V
V
µA
µA
V
MHz
pF
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=50V
V
EB
=12V
I
C
/I
B
=50mA/5mA
V
CE
/I
C
=5V/1mA
h
FE
820 −2700 −
∗
∗
∗
V
CE
=5V, I
E
=−10mA, f=100MHz
V
CB
=5V, I
E
=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
Emitter cutoff current
Collector cutoff current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current transfer ratio
∗ Measured using pulse current.
zElectrical characteristics curves
0
00.20.1 0.3 0.4
0.4
0.8
1.2
1.6
2.0
0.5
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics ( Ι )
COLLECTOR CURRENT : IC (mA)
Ta=25°C
2.0µA
1.2µA
1.0µA
0.8µA
0.6µA
0.4µA
0.2µA
I
B
=0
1.8µA
1.6µA
1.4µA
0841216
40
80
120
160
200
020
0 0.40.2
0.2
0.5
0.6 0.8 1.0
1
2
5
20
10
50
100
200
1.41.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
V
CE
=5V
Ta=100°C
25°C
−25°C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics ( ΙΙ )
COLLECTOR CURRENT : I
C
(mA)
500µA
450µA
400µA
350µA
250µA
200µA
150µA
100µA
50µA
I
B
=0
Ta=25°C
Measured
using pulse current
300µA
0.2 1 2 50.5 10 20 50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current ( Ι )
DC CURRENT GAIN : h
FE
Ta=25°C
Measured
using pulse current
V
CE
=10V
5V
3V
0.2 1 2 50.5 10 20 50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
DC CURRENT GAIN : h
FE
V
CE
=5V
Measured
using pulse current
Ta=100°C
25°C
−25°C
12 50.5 10 20 50 100
1000
1
2
5
10
20
50
100
200
500
0.2 200
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
Ta=25°C
I
C
/
I
B
=50
20
10
2SD2707
/
2SD2654
/
2SD2351
/
2SD2226K
/
2SD2227S
Transistors
Rev.A 3/3
0.2 1 2 50.5 10 20 50 100
1000
1
2
5
10
20
50
100
200
500
200
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
I
C
/
I
B
=10
Ta=100°C
25°C
−25°C
0.2 1 2 50.5 10 20 50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( Ι )
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
Ta=25°C
I
C
/I
B
=10
20
50
0.2 1 2 50.5 10 20 50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
I
C
/I
B
=10
Ta=
−25°C
100°C
25°C
−2−5−10 −20 −50 −100−200 −500
1000
1
2
5
10
20
50
100
200
500
−1−1000
EMITTER CURRENT : I
E
(mA)
Fig.10 Gain bandwidth product
vs. emitter current
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
V
CE
=5V
Measured
using pulse current
0.2 0.5 1 2 5 10 20 50
1000
1
2
5
10
20
50
100
200
500
0.1 100
COLLRCTOR TO BASE VOLTAGE : V
CB
(V)
Fig.11 Collector output capacitance
vs. collector-base voltage
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
Ta=25°C
f=1MHz
I
E
=0A
0.02 0.05 0.1 0.2 0.5 1 2 5
100
0.1
0.2
0.5
1
2
5
10
20
50
0.01 10
I
B
(mA)
Fig.12 Output on resistance
vs. base current
Ron : (Ω)
Ta=25°C
f=1kHz
V
i
=100mV(rms)
R
L
=1kΩ
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
