DMTH6004SCTB-13 - DIODES INC - Datasheet.Directory

DMTH6004SCTB

Document number: DS37382 Rev. 5 - 2

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November 2015

DMTH6004SCTB

NEW PROD UCT

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON) Max

ID

TC = +25°C

(Note 9)

60V

3.4mΩ @ VGS = 10V

100A

Description

This new generation MOSFET features low on-resistance and fast

switching, making it ideal for high efficiency power management

applications.

Applications

 Engine Management Systems

 Body Control Electronics

 DC-DC Converters

Features

 Rated to +175°C – Ideal for High Ambient Temperature

Environments

 100% Unclamped Inductive Switching – Ensures More Reliable

and Robust End Application

 Low RDS(ON) – Minimizes Power Losses

 Low Qg – Minimizes Switching Losses

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 An Automotive-Compliant Part is Available Under Separate

Datasheet (DMTH6004SCTBQ)

Mechanical Data

 Case: TO263AB

 Case Material: Molded Plastic, ―Green‖ Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Finish - Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 1.7 grams (Approximate)

Ordering Information (Note 4)

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Part Number

Case

Packaging

DMTH6004SCTB-13

TO263AB

800 / Tape & Reel

Internal Schematic

D

GS

Top View

TO263AB

YYWW

T6004SCTB

T6004SCTB = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 15 = 2015)

WW = Week (01 to 53)

Green

Pin Out Top View

DMTH6004SCTB

Document number: DS37382 Rev. 5 - 2

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November 2015

DMTH6004SCTB

NEW PROD UCT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

20

V

Continuous Drain Current (Note 6)

TC = +25°C

(Note 9)

ID

100

A

TC = +100°C

100

Maximum Continuous Body Diode Forward Current (Note 6)

TC = +25°C

IS

100

A

Pulsed Drain Current (10μs Pulse, Duty Cycle=1%)

IDM

200

A

Avalanche Current, L=0.2mH

IAS

45

A

Avalanche Energy, L=0.2mH

EAS

200

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

4.7

W

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

32

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

PD

136

W

Thermal Resistance, Junction to Case (Note 6)

RθJC

1.1

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

1

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

2

—

4

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

2.9

3.4

mΩ

VGS = 10V, ID =100A

Diode Forward Voltage

VSD

—

1.3

V

VGS = 0V, IS = 100A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

4,556

—

pF

VDS = 30V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

1,383

—

Reverse Transfer Capacitance

Crss

—

105.2

—

Gate Resistance

Rg

—

0.66

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg

—

95.4

—

nC

VDD = 30V, ID = 90A,

VGS = 10V

Gate-Source Charge

Qgs

—

21.6

—

Gate-Drain Charge

Qgd

—

20.4

—

Turn-On Delay Time

tD(ON)

—

13.2

—

ns

VDD = 30V, VGS = 10V,

ID =90A, RG = 3.5Ω

Turn-On Rise Time

tR

—

11.7

—

Turn-Off Delay Time

tD(OFF)

—

31

—

Turn-Off Fall Time

tF

—

12

—

Reverse Recovery Time

tRR

—

50.5

—

ns

IF=50A, di/dt=100A/µs

Reverse Recovery Charge

QRR

—

80.8

—

nC

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

9. Package limited.

DMTH6004SCTB

Document number: DS37382 Rev. 5 - 2

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November 2015

DMTH6004SCTB

NEW PROD UCT

V , DRAIN -SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

I , DRAIN CURRENT (A)

D

0

20

40

60

80

100

120

140

160

180

200

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V = 3.5V

GS

V = 4.0V

GS

V = 4.5V

GS

V = 5.0V

GS

V = 6.0V

GS

V = 10V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

I , DRAIN CURRENT (A)

D

0

5

10

15

20

25

30

0 1 2 3 4 5 6

V = 5.0V

DS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = 175°C

A

I , DRAIN SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

1

2

3

4

5

030 60 90 120 150

V = 10V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristic

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

1

2

3

4

5

6

7

8

9

10

246810 12 14 16 18 20

I = 90A

D

I , DRAIN SOURCE CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

10 30 50 70 90 110 130 150

V = 10V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 175°C

A

T = 150°C

A

T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

R , DRAIN-SOURCE

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-50 -25 0 25 50 75 100 125 150 175

V = 10V

GS

I = 90A

D

V = 20V

GS

I = 100A

D

(mΩ)

DMTH6004SCTB

Document number: DS37382 Rev. 5 - 2

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November 2015

DMTH6004SCTB

NEW PROD UCT

T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(on) 

0

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

-50 -25 0 25 50 75 100 125 150 175

V = 10V

GS

I = 90A

D

V = 20V

GS

I = 100A

D

T , JUNCTION TEMPERATURE (°C)

J

Figure 8 Gate Threshold Variation vs. Temperature

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

0.5

1

1.5

2

2.5

3

-50 -25 0 25 50 75 100 125 150 175

I = 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

I , SOURCE CURRENT (A)

S

0

30

60

90

120

150

0 0.3 0.6 0.9 1.2 1.5

T = 25°C

A

T = 25°C

A

T = -55°C

A

T = 25°C

A

T = 25°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 25°C

A

T = 25°C

A

T = 150°C

A

T = 175°C

A

.01

.1

1

10

100

1000

.1 110 100

P = 1s

W

P = 100ms

WP = 10ms

W

P = 1ms

W

P = 10µs

W

P = 100µs

W

P = 1µs

W

I , DRAIN CURRENT (A)

D

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

RDS(on)

Limited

T = 175°C

J(m ax)

T = 25°C

C

V = 10V

GS

Single Pulse

DUT on Infinite Heatsink

0

2

4

6

8

10

010 20 30 40 50 60 70 80 90 100

VGS (V)

Qg (nC)

Figure 11. Gate Charge

VDS = 30V, ID= 90A

10

100

1000

10000

0 5 10 15 20 25 30 35 40 45 50 55 60

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

f=1MHz

Crss

Coss

Ciss

DMTH6004SCTB

Document number: DS37382 Rev. 5 - 2

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DMTH6004SCTB

NEW PROD UCT

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

r(t), TRANSIENT THERMAL RESISTANCE

0.001

0.01

0.1

1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Single Pulse

D = 0.005

D = 0.01

D = 0.02

D = 0.9

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

R (t) = r(t) * R

thjc thjc

R = 1.08°C/W

thjc

Duty Cycle, D = t1/ t2

DMTH6004SCTB

Document number: DS37382 Rev. 5 - 2

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DMTH6004SCTB

NEW PROD UCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

TO263AB (D2PAK)

Dim

Min

Max

Typ

A

4.07

4.82

—

A1

0.00

0.25

—

b

0.51

0.99

—

b2

1.15

1.77

—

c

0.356

0.73

—

c2

1.143

1.65

—

D

8.39

9.65

—

D1

6.55

6.95

—

e

2.54 TYP

E

9.66

10.66

—

E1

6.23

8.23

—

H

14.61

15.87

—

L

1.78

2.79

—

L1

—

1.67

—

L2

—

1.77

—

L3

—

0.254

a

0°

8°

—

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

E

L1

D

b2

b

e

L2

c2

A

H

See Detail B

7° ± 1°

c

E1 D1

A1

Gauge Plane

L

L3

a

Detail B

Seating

Plane

Dimensions

Value (in mm)

C

5.08

X

1.10

X1

10.41

Y

3.50

Y1

7.01

Y2

15.99

TO263AB (D2PAK)

X1

Y1

Y2

C

X

Y

DMTH6004SCTB

Document number: DS37382 Rev. 5 - 2

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DMTH6004SCTB

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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website, harmless against all damages.

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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