CMPD1001 CMPD1001A CMPD1001S HIGH CURRENT SWITCHING DIODE SOT-23 CASE The following configurations are available: CMPD1001 SINGLE CMPD1001S DUAL, IN SERIES CMPD1001A DUAL, COMMON ANODE MAXIMUM RATINGS (T,=25C) central . DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. MARKING CODE: L20 MARKING CODE: L21 MARKING CODE: L22 SYMBOL UNITS Continuous Reverse Voltage Vr 90 V Continuous Forward Current IF 250 mA Peak Repetitive Forward Current lcRM 600 mA Peak Repetitive Reverse Current lIRRM 600 mA Forward Surge Current, tp=1 ps lFSM 6000 mA Forward Surge Current, tp=1 s [FSM 1000 mA Power Dissipation Pp 350 mw Operating and Storage Junction Temperature Ty. T stg ~65 to +150 oC Thermal Resistance , OA 357 OCW ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNIT Byr IR=100 pA 90 Vv IR VpR=90V 100 nA IR VR=90V, Ta=150C 100 vA VE Ip=10mA 0.75 V 168SYMBOL TEST CONDITIONS MIN MAX UNIT VE lp=50mA 0.84 Vv VE lp=100mA 0.90 Vv VE IF=200mA 1.00 Vv Ve lpF=400mA 1.25 Vv CT Vp=0, f=1 MHz 35 pF ter IF=IR=30mA, RECOV. TO 3.0mA, Ry =1002 50 ns All dimensions in inches (mm). .110(2.80) .118(3.00) -003(0.08) -083(2.10) -006(0.15} .041(1.05) NOMINAL | NOMINAL T .106(2.70) ' -047(1.19) MAXIMUM | .063(1.60) 7 : .005(0.13) $f -014(0.35) -037(0.94) , 020(0.50) MAX 1 MUM 4 NO CONNECTION = | A C1 FB FB A2 orf] H C2 -050(1.28) OFT PN alan - C 5 At, C2 ss Al, A2 CMPD1001 CMPD1001S CMPD1001A R2 169