Document Number: 94324 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 15-Aug-08 1
Schottky Rectifier, 1.0 A
STPS1L30UPbF
Vishay High Power Products
FEATURES
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for industrial level
DESCRIPTION
The STPS1L30UPbF surface mount Schottky rectifier
has been designed for applications requiring low
forward drop and small foot prints on PC board. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRODUCT SUMMARY
IF(AV) 1.0 A
VR30 V
IRM 15 mA at 125 °C
Cathode Anode
SMB
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.0 A
VRRM 30 V
IFSM tp = 5 ms sine 360 A
VF1.0 Apk, TJ = 125 °C 0.30 V
TJRange - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL STPS1L30UPbF UNITS
Maximum DC reverse voltage VR30 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TL = 106 °C, rectangular waveform 1.0
A
Maximum peak one cycle
non-repetitive surge current IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
360
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94324
2Revision: 15-Aug-08
STPS1L30UPbF
Vishay High Power Products Schottky Rectifier, 1.0 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
1 A TJ = 25 °C 0.420
V
2 A 0.470
1 A TJ = 125 °C 0.300
2 A 0.375
Maximum reverse leakage current IRM (1)
TJ = 25 °C
VR = Rated VR
0.2
mATJ = 100 °C 5.0
TJ = 125 °C 15
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 200 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg - 55 to 150 °C
Maximum thermal resistance,
junction to lead RthJL (2)
DC operation
25
°C/W
Maximum thermal resistance,
junction to ambient RthJA 80
Approximate weight 0.10 g
0.003 oz.
Marking device Case style SMB (similar to DO-214AA) V13L
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 94324 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 15-Aug-08 3
STPS1L30UPbF
Schottky Rectifier, 1.0 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
0.1
1
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8
0
TJ = 125 °C
TJ = 25 °C
0.0001
0.001
1
10
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
20 30
10
0
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10 30
200
TJ = 25 °C
90
100
110
120
130
Allowable Case Temperature (°C)
I
F
(
AV
)
- Average Forward Current (A)
0.80.4 1.2 1.6
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.1
0.3
0.4
0.2
0.5
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0.4 0.8 1.61.2
0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94324
4Revision: 15-Aug-08
STPS1L30UPbF
Vishay High Power Products Schottky Rectifier, 1.0 A
ORDERING INFORMATION TABLE
1- Schottky STPS series
2- Current rating (1 = 1 A)
3- L = Low forward voltage
4- Voltage rating (30 = 30 V)
5
6- None = Standard production
PbF = Lead (Pb)-free
- U = SMB
Tape and reel only (3000 pieces)
Device code
51324
6
STPS 1 L 30 U PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95017
Part marking information http://www.vishay.com/doc?95029
Packaging information http://www.vishay.com/doc?95034
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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