Document Number: 83660 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.5, 11-Jan-08 1
Optocoupler, Phototransistor Output,
No Base Connection
MOC8101/MOC8102/MOC8103/MOC8104/MOC8105
Vishay Semiconductors
DESCRIPTION
The MOC8101/2/3/4/5 family optocoupler consisting of a
gallium arsenide infrared emitting diode optically coupled to
a silicon planar phototransistor detector in a plastic plug-in
DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
The base terminal of the MOC8101/2/3/4/5 is not connected,
resulting in a substantially improved common mode
interference immunity.
FEATURES
• Isolation test voltage, 5300 VRMS
• No base terminal connection for improved
common mode interface immunity
• Long term stability
• Industry standard dual in line package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• CSA 93751
• BSI IEC 60950; IEC 60065
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending
available with option 1
Note
For additional information on the available options refer to option information.
i179009
1
2
3
6
5
4
B
C
E
A
C
NC
ORDER INFORMATION
PART REMARKS
MOC8101 CTR 50 to 80 %, DIP-6
MOC8102 CTR 73 to 117 %, DIP-6
MOC8103 CTR 108 to 173 %, DIP-6
MOC8104 CTR 160 to 256 %, DIP-6
MOC8105 CTR 65 to 133 %, DIP-6
MOC8101-X006 CTR 50 to 80 %, DIP-6 400 mil (option 6)
MOC8101-X007 CTR 50 to 80 %, SMD-6 (option 7)
MOC8101-X009 CTR 50 to 80 %, SMD-6 (option 9)
MOC8102-X006 CTR 73 to 117 %, DIP-6 400 mil (option 6)
MOC8102-X007 CTR 73 to 117 %, SMD-6 (option 7)
MOC8102-X009 CTR 73 to 117 %, SMD-6 (option 9)
MOC8104-X006 CTR 160 to 256 %, DIP-6 400 mil (option 6)
MOC8104-X009 CTR 160 to 256 %, SMD-6 (option 9)
MOC8105-X006 CTR 65 to 133 %, DIP-6 400 mil (option 6)
MOC8105-X009 CTR 65 to 133 %, SMD-6 (option 9)
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83660
2Rev. 1.5, 11-Jan-08
MOC8101/MOC8102/MOC8103/MOC8104/MOC8105
Vishay Semiconductors Optocoupler, Phototransistor Output,
No Base Connection
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6.0 V
Forward continuous current IF60 mA
Surge forward current t ≤ 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW
Derate linearly from 25°C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 30 V
Emitter collector breakdown voltage BVECO 7.0 V
Collector current IC50 mA
Derate linearly from 25°C 2.0 mW/°C
Power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage VISO 5300 VRMS
Creepage distance ≥ 7.0 mm
Clearance distance ≥ 7.0 mm
Isolation thickness between
emitter and detector ≥ 0.4 mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1 CTI 175
Isolation resistance VIO = 500 V RIO 1012 Ω
Derate linearly from 25 °C 3.33 mW/°C
Total power dissipation Ptot 250 mW
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature (2)
max. 10 s, dip soldering:
distance to seating plane
≥ 1.5 mm
Tsld 260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1.25 1.5 V
Breakdown voltage IR = 10 µA VBR 6.0 V
Reverse current VR = 6.0 V IR0.01 10 µA
Capacitance VR = 0 V, f = 1.0 MHz CO25 pF
Thermal resistance Rthja 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 5.2 pF
Collector emitter dark current VCE = 10 V, Tamp = 25 °C MOC8101 ICEO1 1.0 50 nA
VCE = 10 V, Tamp = 100 °C MOC8102 ICEO1 1.0 µA
Collector emitter breakdown voltage IC = 1.0 mA BVCEO 30 V
Emitter collector breakdown voltage IE = 100 μABV
ECO 7.0 V
Thermal resistance Rthja 500 K/W
Document Number: 83660 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.5, 11-Jan-08 3
MOC8101/MOC8102/MOC8103/MOC8104/MOC8105
Optocoupler, Phototransistor Output,
No Base Connection Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
TYPICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Fig. 1 - Forward Voltage vs. Forward Current Fig. 2 - Collector Current vs. LED Forward Current
COUPLER
Saturation voltage collector emitter IF = 5.0 mA VCEsat 0.25 0.4 V
Coupling capacitance CC0.6 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio VCE = 10 V, IF = 10 mA
MOC8101 CTR 50 80 %
MOC8102 CTR 73 117 %
MOC8103 CTR 108 173 %
MOC8104 CTR 160 256 %
MOC8105 CTR 65 133 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time VCC = 10 V, IC = 2.0 mA, RL = 100 Ωton 3.0 µs
Turn-off time VCC = 10 V, IC = 2.0 mA, RL = 100 Ωtoff 2.3 µs
Rise time VCC = 10 V, IC = 2.0 mA, RL = 100 Ωtr2.0 µs
Fall time VCC = 10 V, IC = 2.0 mA, RL = 100 Ωtf2.0 µs
Cut off frequency fco 250 kHz
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
imoc8101_02
1.7
1.5
1.3
1.1
0.9
0.7
I (mA)
F
VF(V)
0.1 110 100
TA = 55 °C
TA = 25 °C
TA = 100 °C
imoc8101_03
10
1
0.1
0.01
IC(Normalized)
0.1 1 10 10
0
IF(mA)
Normalized to IF = 10 mA
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83660
4Rev. 1.5, 11-Jan-08
MOC8101/MOC8102/MOC8103/MOC8104/MOC8105
Vishay Semiconductors Optocoupler, Phototransistor Output,
No Base Connection
Fig. 3 - Collector Current vs. Collector Emitter Voltage
Fig. 4 - Collector Current vs. Ambient Temperature
Fig. 5 - Collector Emitter Dark Current vs. Ambient Temperature
Fig. 6 - Capacitance vs. Voltage
Fig. 7 - Switching Time Test Circuit and Waveforms
imoc8101_04
MOC8104
MOC8103
MOC8102
MOC8101
MOC8105
IF= 10 mA
25
20
15
10
5
0
IC(mA)
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
imoc8101_05
T(°C)
IC(mA)
10
1
0.1
- 60 - 40
- 20 0
20 40 60 80 100 120
Normalized to TA = 25 °C
IF = 10 mA
VCE = 10 V
imoc8101_06
10000
1000
100
10
1
0.1
0 20 40 60 80 100
TA(°C)
ICEO (Normalized)
Normalized to V
CE
= 10 V
V
CE
= 30 V
V
CE
= 10 V
imoc8101_07
20
18
16
14
12
10
8
6
4
2
0
0.01 0.1 1 1 0 100
C - Capacitance (pF)
Voltage (V)
f = 1 MHz
CLED
CCE
imoc81010_01
V
CC = 10 V
IC
IFRL= 100 Ω
Output
Input
10 %
90 %
Inputpulse
Outputpulse
ton tof f
trtf
Test circuit Waveforms
Document Number: 83660 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.5, 11-Jan-08 5
MOC8101/MOC8102/MOC8103/MOC8104/MOC8105
Optocoupler, Phototransistor Output,
No Base Connection Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
i178004
0.010 (0.25)
typ.
0.114 (2.90)
0.130 (3.0)
0.130 (3.30)
0.150 (3.81)
0.031 (0.80) min.
0.300 (7.62)
typ.
0.031 (0.80)
0.035 (0.90)
0.100 (2.54) typ.
0.039
(1.00)
min.
0.018 (0.45)
0.022 (0.55)
0.048
0.022 (0.55)
0.248 (6.30)
0.256 (6.50)
0.335 (8.50)
0.343 (8.70)
Pin one ID
6
5
4
12
3
18°
3° to 9°
0.300 to 0.347
(7.62 to 8.81)
4°
typ.
ISO method A
(0.45)
min.
0.315 (8.00)
0.020 (0.51 )
0.040 (1.02 )
0.300 (7.62)
ref.
0.375 (9.53)
0.395 (10.03 )
0.012 (0.30 ) typ.
0.0040 (0.102)
0.0098(0.249)
15° max.
Option 9
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.307 (7.8)
0.291 (7.4)
0.407 (10.36)
0.391 (9.96)
Option 6
0.315 (8.0)
min.
0.300 (7.62)
typ.
0.180 (4.6)
0.160 (4.1)
0.331 (8.4)
min.
0.406 (10.3)
max.
0.028(0.7)
min.
Option 7
18450
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83660
6Rev. 1.5, 11-Jan-08
MOC8101/MOC8102/MOC8103/MOC8104/MOC8105
Vishay Semiconductors Optocoupler, Phototransistor Output,
No Base Connection
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
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