TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 x x x x x x x x x x x x x DUAL-IN-LINE PACKAGE (TOP VIEW) Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain 1/2-in Format, Solid State Charge-Coupled Device (CCD) Frame Interline Transfer Monochrome Image Sensor for Low Light Level Applications with 30 Frames/s readout speed 340,000 Pixels per Field Frame Memory 658 (H) x 496 (V) Active Pixels in Image Sensing Area Multimode Readout Capability o Progressive Scan o Pseudo-Interlace Scan o Line Summing o Pixel Summing 0-8V Serial Operation Except CMG Gate Continuous Electronic Exposure Control from 1/30 s to 1/2,000 s Advanced Lateral Overflow Drain 10.0 um Square Pixels Low Dark Current x High Photoresponse Uniformity Over a Wide Spectral Range Solid State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, or Microphonics Package with built-in Peltier Cooler and Temperature Sensor Description The TC247SPD is a frame interline transfer CCD image sensor designed for use in black and white, NTSC TV, computer, and special-purpose applications requiring low noise, high sensitivity, high speed and low smear. The TC247SPD is a new device of the IMPACTRONTM family of very-low noise, high sensitivity, high speed and low smear sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier multiplication (CCM) is achieved by using a low-noise single-carrier, impact ionization process that occurs during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed gates activates the CCM. Multiplication gain is variable by adjusting the amplitude of the multiplication pulses. The device function resembles the function of an image intensifier implemented in solid state. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 The image-sensing area of the TC247SPD is configured into 500 lines with 680 pixels in each line. 20 pixels are reserved in each line for dark reference. The blooming protection is based on an advanced lateral overflow drain concept that does not reduce NIR response. The sensor can be operated in the progressive scan mode and can capture a full 340,000 pixels in one image field. The frame interline transfer from the image sensing area to the memory area is implemented to minimize image smear. After charge is integrated and stored in the memory it is available for readout in the next cycle. This is accomplished by using a unique serial register design that includes special charge multiplication pixels. The TC247SPD sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase CCD (SGVPCCD) technology, which provides devices with wide spectral response, high quantum efficiency (QE), low dark current, and high response uniformity. This MOS device contains limited built-in protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to Vss. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to Vss during operation to prevent damage to the amplifier. The device can also be damaged if the output and ADB terminals are reverse-biased and excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication "Guidelines for Handling Electrostatic-Discharge-Sensitive (ESD) Devices and Assemblies" available from Texas Instruments. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 2 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 For stable operation, a decoupling capacitor (1uF, >5V) needs to be connected externally from the package FP pin to SUB. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 3 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 <Image Cell Topologies> 10um Square PD-Cell V-Cell Antiblooming Drain TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 4 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Terminal functions Terminal name, No. SUB SRG1 SRG2 CMG RST THER NC VDD OUT FP VCLD SAG2 SAG1 P(-) P(+) IAG2 IAG1 ODB 1,7,12,13,24 2 3 4 5 6 8 9 10 11 14 15 16 17,18 19,20 21 22 23 I/O I I I I I I O I I I I I I I I Description Chip substrate Serial register gate-1 Serial register gate-2 Charge multiplication gate Reset gate Thermistor (NTC: Negative Temperature Coefficient) No connection Supply voltage for amplifiers Output signal, multiplier channel Field plate (connect external capacitor) Supply voltage for Clearing drain & ESD protect circuits Storage area gate-2 Storage area gate-1 Peltier cooler power supply - negative Peltier cooler power supply - positive Image area gate-2 Image area gate-1 Supply voltage for anti-blooming drain Detailed description The TC247SPD consists of five basic functional blocks: The image-sensing area, the image-storage area, the serial register, the charge multiplier, and the charge detection node with buffer amplifier. The location of each of these blocks is identified in the functional block diagram. Image-sensing and storage areas As light enters the silicon in the image-sensing area, electrons are generated and collected in potential wells of the pixels. Applying a suitable DC bias to the antiblooming drain provides blooming protection. The electrons that exceed a specific level, determined by the ODB bias, are drained away from the pixels. After the integration cycle is completed by applying a PD-cell readout pulse to IAG2, charge is transferred from the PD-cell into the V-cell and then quickly transferred into the storage cell where it waits for readout. The lines can be readout from the memory in a sequential order to implement progressive scan, or 2 lines can be summed together to implement a pseudo-interlace scan. 20 columns at the left edge and 2 columns at the right edge of the image-sensing area are shielded from the incident light. These pixels provide the dark reference used in subsequent video-processing circuits to restore the video-black level. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 5 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Additionally, 4 dark lines, located between the image sensing area and the image-storage area, were added to the array for isolation. Advanced lateral overflow drain Each pixel is constructed with the advanced lateral overflow drain structure. By varying the DC bias of the anti-blooming drain it is possible to control the blooming protection level and trade it for well capacity. Electronic exposure control Precise exposure control timing on a frame-by-frame basis is possible. The integration time can be arbitrarily shortened from its nominal length by clearing residual charge from the PD-cell. To do this, apply a PD-cell clear pulse to IAG2, which marks the beginning of integration. Serial register and charge multiplier The serial register of TC247SPD image sensor consists of only poly-silicon gates. It operates at high speed, being clocked from 0V to 8V. This allows the sensor to work at 30 frames/s. The serial register is used for transporting charge stored in the pixels of the memory lines to the output amplifier. The TC247SPD device has a serial register with twice the standard length. The first half has a conventional design that interfaces with the memory as it would in any other CCD sensor. The second half, however, is unique and includes 400 charge multiplication stages with a number of dummy pixels that are needed to transport charge between the active register blocks and the output amplifier. Charge is multiplied as it progresses from stage to stage in the multiplier toward the charge detection node. The charge multiplication level depends on the amplitude of the multiplication pulses (approximately 15V~22V) applied to the multiplication gate. Due to the double length of the register, first 2 lines in each field or frame scan do not contain valid data and should be discarded. Charge detection node and buffer amplifier The last element of the charge detection and readout chain is the charge detection node with the buffer amplifier. The charge detection node is using a standard Floating Diffusion (FD) concept followed by an on-chip, dual-stage, source-follower buffer. Applying a pulse to the RST pin resets the detection node. Pixel charge summing function can be easily implemented by skipping the RST pulses. To achieve the ultimate sensor performance it is necessary to eliminate kTC noise. This is typically accomplished by using CDS (correlated double sampling) processing techniques. IMPACTRONTM devices have the potential for detecting single electrons (photons) when cooled sufficiently. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 6 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Absolute maximum ratings over operating free-air temperature range (unless otherwise noted)* Supply voltage range, Vss: VDD, VCLD (see Note1) Supply voltage range, Vss: ODB Input voltage range, Vi: IAG1, SAG1, SAG2 Input voltage range, Vi: IAG2 Input voltage range, Vi: SRG1, SRG2, RST Input voltage range, Vi: CMG Supply voltage range, Vcool: P+ (see Note2) Supply current range, Icool: P+ (see Note2) Supply current range, Ith: THER Operating free-air temperature range, Ta Storage temperature range, Tstg Dew point inside the package (see Note2) 0V to 15V 0V to 22V -10V to 10V -10V to 13V 0V to 10V -5V to 22V 0V to 5.5V 0A to 1.4A 0A to 0.31mA -20C to 55C -30C to 85C Less than -20C * Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect the device reliability. Notes: 1. All voltage values are with respect to substrate terminal. 2. The peltier cooler generates heat during cooling process. Heat must be removed through an external heat sink. In order to avoid condensation upon the surface do not cool the CCD to less than -20 degrees C. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 7 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Recommended operating conditions Description Substrate bias, Vss Supply voltage, Vdd VDD VCLD ODB* High Low High Mid Low High Low High Low High Low High Low High Low High Low IAG1 IAG2 SAG1 Input voltage, Vi SAG2 SRG1 SRG2 CMG** RST SAG1, SAG2 IAG1, IAG2 Clock Frequency, fck SRG1, SRG2, RST CMG Load capacitance OUT Dew point inside the package *** Operating free-air temperature * ** *** MIN NOM MAX UNIT 0.0 13.5 14.0 14.5 V 13.5 14.0 14.5 4.5 6.5 3.0 3.3 3.6 -5.8 -5.5 -5.2 9.5 10.0 10.5 3.0 3.3 3.6 -5.8 -5.5 -5.2 3.0 3.3 3.6 -5.8 -5.5 -5.2 3.0 3.3 3.6 V -5.8 -5.5 -5.2 7.5 8.0 8.5 0.0 7.5 8.0 8.5 0.0 7.0 22.0 -3.0 -2.5 -2.0 5.5 6.0 6.5 0.0 1.5 1.5 MHz 12.5 25.0 12.5 25.0 6.0 PF -20 C -20 25 55 C Adjustment within the specified MIN - MAX range is required to optimize performance. Charge multiplication gain depends on high level of the CMG and temperature. -20 degrees should be the minimum temperature of the cooled CCD. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 8 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Electrical characteristics over recommended operating ranges of supply voltage at operating free-air temperature (unless otherwise noted) PARAMETER Charge multiplication gain * Excess noise factor for typical CCM gain (Note 3) Dynamic range without CCM gain Dynamic range with typical CCM gain (Note 4) Charge conversion gain without CCM gain (Note 5) W Signal-response delay time (Note 6) Output resistance Amp. Noise-equivalent signal without CCM gain ** Amp. Noise-equivalent signal with typ. CCM gain ** Response linearity with no CCM gain Response linearity with typ. CCM gain Charge-transfer efficiency Parallel transfer (Note 7) Serial transfer Supply current IAG1 IAG2 IAG1-IAG2 SAG1 SAG2 SAG1-SAG2 Ci Input capacitance SRG1 SRG2 CMG ODB RST MIN TYP MAX UNIT 1 1 200 1.4 63 75 14 16 320 20 1.0 1 1 2000 dB dB uV/e ns e e mA 0.99994 0.99994 1.0 1.0 2.0 3 7 3 4 5 3 85 55 25 2,000 7 nF pF All typical values are at Ta = 25 C unless otherwise noted. * Maximum CCM gain is not guaranteed. ** The values in the table are quoted using CDS = Correlated Double Sampling. CDS is a signal processing technique that improves performance by minimizing undesirable effects of reset noise. Notes : 3. Excess Noise Factor "F" is defined as the ratio of noise sigma after multiplication divided by M times the noise sigma before multiplication where M is the charge multiplication gain. 4. Dynamic Range is -20 times the logarithm of the noise sigma divided by the saturation-output signal amplitude 5. Charge conversion factor is defined as the ratio of output signal to input number of electrons. 6. Signal-response delay time is the time between the falling edge of the SRG1 pulse and the outputsignal valid state. 7. Charge transfer efficiency is one minus the charge loss per transfer in the CCD register. The test is performed in the dark using either electrical or optical input. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 9 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Optical characteristics Ta = 25C, Integration time = 16.67msec (unless otherwise noted) PARAMETER MIN TYP MAX No IR-cut filter Sensitivity with typical CCM gain (Note 8) With IR-cut filter Sensitivity without No IR-cut filter CCM gain (Note 8) With IR-cut filter Saturation signal output no CCM gain (Note 9) Saturation signal output Anti blooming Enable no CCM gain(Note 9) Saturation signal output with typ CCM gain (Note 9) Zero input offset output (Note 10) Blooming overload ratio (Note 11) Image area well capacity Smear (Note 12) Dark current (Note 13) Dark signal (Note 14) Spurious Dark non-uniformity Illuminated Column uniformity (Note 15) Electronic-shutter capability 3660 620 18.3 3.1 400 180 UNIT V/Lx sec V/Lx sec mV 1500 100 500:1 28k -84 0.01 0.01 -30 1/2000 1/30 5.0 30 2.0 e dB nA/cm2 mV mV % % s Notes: 8. Light source temperature is 2856 K. The IR filter used is CM500 1mm thick. 9. Saturation is the condition in which further increase in exposure does not lead to further increases in output signal. 10. Zero input offset is the residual output signal measured from the reset level with no input charge present. This level is not caused by the dark current and remains approximately constant independent of temperature. It may vary with the amplitude of SRG1. 11. Blooming is the condition in which charge induced by light in one element spills over to the neighboring elements. 12. Smear is the measure of error signal introduced into the pixels by transferring them through the illuminated region into the memory. The illuminated region is 1/10 of the image area height. The value in the table is obtained for the integration time of 33.3ms and 1.5 MHz vertical clock transfer frequency. 13. Dark current depends on temperature and approximately doubles every 8 Co. Dark current is also multiplied by CCM operation. The value given in the table is with the multiplier turned off and it is a calculated value. 14. Dark signal is actual device output measured in dark. 15. Column uniformity is obtain by summing all the lines in the array, finding the maximum of the difference of two neighboring columns anywhere in the array, and dividing the result by the number of lines. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 10 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 SRG2 (CMG) FP Polysilicon Gates SRG1 Pixel Cross Section X I Channel Potential FIGURE 1. Serial Register Pixel Cross Section TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 11 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 V-Cell Clearing Transfer to Storage Area Recommend over 750 Pulses 500 Pulses IAG1 PD-Cell Readout Pulse PD-Cell Clear Pulse Pulse Position Determines Exposure IAG2 Line Transfer 501 Cycles SAG1 SAG2 682 Pulses Line #500 (Total 502 line) 682 Pulses Line # -1 (*) 682 Pulses Line #0 (*) RST SRG1 SRG2 CMG Expanded Section of Parallel Transfer Expanded Section of Serial Transfer Expanded Section of Serial Transfer IAG1 RST RST IAG2 SRG1 SRG1 SAG1 SRG2 SRG2 SAG2 CMG CMG (*) Line # "-1" and "0" do not contain valid data FIGURE 2-a. Progressive Scan Timing TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 12 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 V-Cell Clearing Recommend over 750 Pulses Transfer to Storage Area A-field = 500 Pulses B-field = 501 Pulses IAG1 PD-Cell Readout Pulse PD-Cell Clear Pulse Pulse Position Determines Exposure IAG2 Line Transfer 251 Cycles SAG1 Line Summing SAG2 682 Pulses Line #250 (Total 252 line) 682 Pulses Line # -1 (*) 682 Pulses Line #0 (*) RST SRG1 SRG2 CMG Expanded Section of Parallel Transfer Expanded Section of Serial Transfer Expanded Section of Serial Transfer IAG1 RST RST IAG2 SRG1 SRG1 SAG1 SRG2 SRG2 SAG2 CMG CMG (*) Line # "-1" and "0" do not contain valid data FIGURE 2-b. Interlace Timing of Line Summing Mode TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 13 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 RST SRG1 SRG2 CMG Reset Level Vout Zero Offset Signal Reference Level Output Signal * : Signal-response delay Clamp S/H * Output signal may not be zero for zero input charge. FIGURE 3. Serial register Clock Timing for CDS Implementation TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 14 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 2 Dark signal 20 Dark signal 658 Active signal 2 Dummy signal 5 12* 3 * Due to light leakage into the edge pixels of the 20 dark reference pixels it is recommended that these 12 pixels be used for true dark reference. FIGURE 4. Detailed output signal TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 15 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Ts Ts1 Ts2 SRG1 Tr Tf Tf Tr SRG2 CMG Tsx Tf Ts Ts1 MIN 75 35 TYP 80 40 MAX 85 45 Ts2 35 40 45 Tsx Tf UNIT ns 8 CMG Tr Tr SRG1 SRG2 CMG SRG1 SRG2 MIN 3 3 3 3 3 3 MAX 8 8 8 8 8 8 UNIT 90% ns 10% Tr Tf FIGURE 5. Serial Transfer Timing (12.5HMz applications) TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 16 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Tp Tp1 IAG1 Tp2 Tpx IAG2 Tp1 SAG1 Tp2 Tpx SAG2 MIN Tp Tp1 Tp2 Tpx Tr Tf TYP 664 260 330 50 230 300 40 IAG1,2 SAG1,2 IAG1,2 SAG1,2 MIN 15 15 15 15 MAX 290 360 60 MAX 25 25 25 25 UNIT ns UNIT ns 90% 10% Tr Tf FIGURE 6. Vertical Transfer Timing (1.5 MHz application) TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 17 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Tl1 Tl2 SAG1 Minimum 800ns Tlx Minimum 800ns SAG2 CMG SRG1 SRG2 682 Pulses H-Blanking Tl1* Tl2* Tlx* MIN 230 300 40 TYP 260 330 50 MAX 290 360 60 UNIT ns * Line Transfer Timing : Same timing as 1.5MHz vertical transfer FIGURE 7. Typical Line Transfer Timing IAG1 PD-Cell Readout Pulse PD-Cell Clear Pulse Tpd Tpdc Pulse Position Determines Exposure IAG2 Hold time of Storage area** Tpdx* SAG1,2 CMG SRG1,2 499H 500H Tpd Tpdc Tpdx* MIN 1.0 1.0 TYP 1.5 1.5 1.0 -1H V-Blanking (23H) MAX 2.0 2.0 UNIT Tr Tf us Tpd,Tpdc Tpd,Tpdc MIN 250 100 MAX 1000 1000 0H 1H UNIT ns * Tpdx : as shorter as possible ** Hold time of Storage area : Recommend shorter than 300usec FIGURE 8. Typical PD-Readout and Exposure Control Timing TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 18 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 30.0 Responsivity [V/uJ/cm2] 25.0 20.0 15.0 10.0 5.0 0.0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wave Length [nm] FIGURE 9. Typical Spectral Responsivity 70% 60% Quantum Efficiency [%] 50% 40% 30% 20% 10% 0% 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wave Length [nm] FIGURE 10. Typical Spectral Quantum Efficiency TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 19 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 2000 1800 1600 23 deg C 10 deg C 0 deg C -9 deg C -20 deg C 1200 1000 800 600 400 200 0 18 18.2 18.4 18.6 18.8 19 19.2 19.4 19.6 19.8 20 20.2 CMG High Voltage [V] FIGURE 11. Typical Variation of Multiplication Gain with CMG High Voltage 50 Ta = 60C Ta = 50C Ta = 40C Ta = 30C Ta = 20C Ta = 10C Ta = 0C Ta =-10C Measurement Conditions Heat sink : 3.3C/W Air flow : 4.3m/s CCD drive : ON 40 CCD Temperature [deg C] CM Gain 1400 30 20 10 0 -10 -20 Please observe the absolute minimum temperature of the CCD, -20 C. -30 0.2 0.4 0.6 0.8 1 1.2 1.4 Peltier Supply Current [A] FIGURE 12. Typical Cooling Capability TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 20 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 120 110 Resistance (25C) : 10k ohm 1% B-Constant (25-50C) : 3380K 1% 100 Resistance [k-Ohm] 90 80 70 60 50 40 30 20 10 50 45 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 0 Temperature [deg C] 70 68 66 64 62 60 58 56 54 52 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 Resistance (25C) : 10k ohm 1% B-Constant (25-50C) : 3380K 1% -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Resistance [k-Ohm] FIGURE 13. Typical Thermistor Characteristics Temperature [deg C] FIGURE 14. Typical Thermistor Characteristics (Detail) TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 21 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 +5.0V +11.0V 3.9k 0.1uF IAG1 IN 1.0k + HN1A01F 0.1uF 10 1.0k 0.1uF 10 1 2 3 1.0k 1.0k IAG2-1 IN 10 4 VS+ VH OE OUT IN GND VL VS- 8 IAG1 OUT 7 6 2.2 5 HN1A01F EL7156CS +3.0V 10 1 1.0k 2 3 10 10 4 1.0k VS+ VH OE OUT IN GND VL VS- 8 7 6 + 2.2 100uF/16V 0.1uF 5 EL7156CS 1.0k OE IAG2-2 100uF/16V RB050L-40 HN1A01F 1 10 10 2 3 10 10 4 VS+ VH OE OUT IN GND VL VS- 8 IAG2 OUT 7 6 2.2 5 -6.0V EL7156CS 1.0k IAG2-2 IN HN1A01F 0.1uF + 1.0k 100uF/16V 10 1.0k -6.0V 10 1.0k IAG2-1 IN IAG2-2 IN 0.1uF OE IAG2-2 IAG2 OUT FIGURE 15. Typical IAG Driver Circuits TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 22 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 +5.0V +5.0V 3.9k 0.1uF 1.0k + HN1A01F 100uF/16V 0.1uF 0.1uF 10 SAG1 IN +3.0V 1 10 470 1.0k 2 3 1.0k 470 1.0k 10 4 OE OUT VL IN VS- GND 8 SAG1 OUT 7 2.2 6 + 100uF/16V 0.1uF 5 HN1A01F EL7156CS 10 SAG2 IN VH VS+ 1 1.0k 1.0k 2 3 -6.0V 10 470 10 4 VH VS+ OE OUT VL IN VS- GND 8 SAG2 OUT 7 2.2 6 -6.0V 5 470 1.0k 0.1uF + 0.1uF 100uF/16V FIGURE 16. Typical SAG Driver Circuits +8.0V SRG1 IN + 100uF/16V 10 0.1uF 1.0k 1 2 SRG2 IN 3 10 4 5 6 RST IN 7 10 8 INA Vs+ OE OUTA INB OUTB VL NC GND VH NC OUTC INC OUTD IND Vs- 16 33 15 SRG2 OUT 14 13 SRG1 OUT 33 12 RST OUT 11 10 68 9 EL7457CS FIGURE 17. Typical SRG and RST Driver Circuits TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 23 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Vcmgh +5.0V + 100uF/16V 0.1uF 100uF/33V + 2200pF 0.1uF 1SS355 10k 1SS355 1SS355 10 10 10 10 1 2 3 4 5 6 7 8 9 10 1G 1A1 2Y4 1A2 2Y3 1A3 2Y2 1A4 2Y1 GND Vcc 2G 1Y1 2A4 1Y2 2A3 1Y3 2A2 1Y4 2A1 20 19 18 17 16 15 14 13 12 11 TP2104N3 10 33 10 2.7k 10 1.0uF 33 TN2106N3 1SS355 1SS355 Vcmgl 100uF/16V CMG OUT 1.0uF 10 SN74AHCT244PW + CMG IN 2200pF 1SS355 10k 0.1uF FIGURE 18. Typical CMG Driver Circuits TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 24 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 Mechanical data The package for the TC247SPD consists of a ceramic base, a glass window, and a 24-pin lead frame. The glass window is hermetically sealed to the package. The package leads are configured in a dual-in-line arrangement and fit into mounting holes with 1,78 mm center-to-center spacing. Attention Be careful when attaching an external heat sink to the package. Fastening it too strongly may crack or puncture the package, making it susceptible to moisture or humidity. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 25 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 26 TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those pertaining to warranty, patent infringement, and limitation of liability. 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Resale of TI's products or services with statements different from or beyond the parameters stated by TI for that product or service voids all expressed and any implied warranties for the associated TI product or service, is an unfair and deceptive business practice, and TI is not responsible nor liable for any such use. Also see: Standard Terms and Conditions of Sale for Semiconductor Products. www.ti.com/sc/docs/stdterms.htm Copyright 2003, Texas Instruments Incorporated TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 27