TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
xVery Low Noise, Very High
Sensitivity, Electronically
Variable Charge Domain Gain
x1/2-in Format, Solid State
Charge-Coupled Device (CCD)
Frame Interline Transfer
Monochrome Image Sensor for
Low Light Level Applications
with 30 Frames/s readout speed
x340,000 Pixels per Field
xFrame Memory
x658 (H) x 496 (V) Active Pixels
in Image Sensing Area
xMultimode Readout Capability
oProgressive Scan
oPseudo-Interlace Scan
oLine Summing
oPixel Summing
x0-8V Serial Operation Except
CMG Gate
xContinuous Electronic
Exposure Control from 1/30 s
to 1/2,000 s
xAdvanced Lateral Overflow
Drain
x10.0 um Square Pixels
xLow Dark Current
DUAL-IN-LINE PACKAGE (TOP VIEW)
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xHigh Photoresponse
Uniformity Over a Wide
Spectral Range
xSolid State Reliability With No
Image Burn-in, Residual
Imaging, Image Distortion, or
Microphonics
xPackage with built-in Peltier
Cooler and Temperature
Sensor
Description
The TC247SPD is a frame interline transfer CCD image sensor designed for use in black
and white, NTSC TV, computer, and special-purpose applications requiring low noise,
high sensitivity, high speed and low smear.
The TC247SPD is a new device of the IMPACTRONTM family of very-low noise, high
sensitivity, high speed and low smear sensors that multiply charge directly in the charge
domain before conversion to voltage. The charge carrier multiplication (CCM) is
achieved by using a low-noise single-carrier, impact ionization process that occurs during
repeated carrier transfers through high field regions. Applying multiplication pulses to
specially designed gates activates the CCM. Multiplication gain is variable by
adjusting the amplitude of the multiplication pulses. The device function resembles the
function of an image intensifier implemented in solid state.
TEXAS 1
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
The image-sensing area of the TC247SPD is configured into 500 lines with 680 pixels in
each line. 20 pixels are reserved in each line for dark reference. The blooming protection
is based on an advanced lateral overflow drain concept that does not reduce NIR
response. The sensor can be operated in the progressive scan mode and can capture a
full 340,000 pixels in one image field. The frame interline transfer from the image
sensing area to the memory area is implemented to minimize image smear. After charge
is integrated and stored in the memory it is available for readout in the next cycle. This is
accomplished by using a unique serial register design that includes special charge
multiplication pixels.
The TC247SPD sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase
CCD (SGVPCCD) technology, which provides devices with wide spectral response, high
quantum efficiency (QE), low dark current, and high response uniformity.
This MOS device contains limited built-in protection. During storage or handling, the device leads
should be shorted together or the device should be placed in conductive foam. In a circuit, unused
inputs should always be connected to Vss. Under no circumstances should pin voltages exceed
absolute maximum ratings. Avoid shorting OUT to Vss during operation to prevent damage to the
amplifier. The device can also be damaged if the output and ADB terminals are reverse-biased and
excessive current is allowed to flow. Specific guidelines for handling devices of this type are
contained in the publication “Guidelines for Handling Electrostatic-Discharge-Sensitive (ESD)
Devices and Assemblies” available from Texas Instruments.
TEXAS 2
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
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For stable operation, a decoupling capacitor (1uF, >5V) needs to be connected externally
from the package FP pin to SUB.
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㪈㫌㪝
TEXAS 3
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
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㪩㪼㪽㪼㫉㪼㫅㪺㪼㩷㪧㫀㫏㪼㫃㫊
Antiblooming Drain
<Image Cell Topologies>
10um Square
PD-Cell V-Cell
TEXAS 4
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Terminal functions
Terminal name, No. I/O Description
SUB 1,7,12,13,24 Chip substrate
SRG1 2 I Serial register gate-1
SRG2 3 I Serial register gate-2
CMG 4 I Charge multiplication gate
RST 5 I Reset gate
THER 6 I Thermistor (NTC: Negative Temperature Coefficient)
NC 8 - No connection
VDD 9 I Supply voltage for amplifiers
OUT 10 O Output signal, multiplier channel
FP 11 Field plate (connect external capacitor)
VCLD 14 I Supply voltage for Clearing drain & ESD protect circuits
SAG2 15 I Storage area gate-2
SAG1 16 I Storage area gate-1
P(-) 17,18 I Peltier cooler power supply - negative
P(+) 19,20 I Peltier cooler power supply - positive
IAG2 21 I Image area gate-2
IAG1 22 I Image area gate-1
ODB 23 I Supply voltage for anti-blooming drain
Detailed description
The TC247SPD consists of five basic functional blocks: The image-sensing area, the
image–storage area, the serial register, the charge multiplier, and the charge detection
node with buffer amplifier. The location of each of these blocks is identified in the
functional block diagram.
Image-sensing and storage areas
As light enters the silicon in the image-sensing area, electrons are generated and collected
in potential wells of the pixels. Applying a suitable DC bias to the antiblooming drain
provides blooming protection. The electrons that exceed a specific level, determined by
the ODB bias, are drained away from the pixels. After the integration cycle is completed
by applying a PD-cell readout pulse to IAG2, charge is transferred from the PD-cell into
the V-cell and then quickly transferred into the storage cell where it waits for readout.
The lines can be readout from the memory in a sequential order to implement progressive
scan, or 2 lines can be summed together to implement a pseudo-interlace scan. 20
columns at the left edge and 2 columns at the right edge of the image-sensing area are
shielded from the incident light. These pixels provide the dark reference used in
subsequent video-processing circuits to restore the video-black level.
TEXAS 5
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Additionally, 4 dark lines, located between the image sensing area and the image-storage
area, were added to the array for isolation.
Advanced lateral overflow drain
Each pixel is constructed with the advanced lateral overflow drain structure. By varying
the DC bias of the anti-blooming drain it is possible to control the blooming protection
level and trade it for well capacity.
Electronic exposure control
Precise exposure control timing on a frame-by-frame basis is possible. The integration
time can be arbitrarily shortened from its nominal length by clearing residual charge from
the PD-cell. To do this, apply a PD-cell clear pulse to IAG2, which marks the beginning
of integration.
Serial register and charge multiplier
The serial register of TC247SPD image sensor consists of only poly-silicon gates. It
operates at high speed, being clocked from 0V to 8V. This allows the sensor to work at
30 frames/s. The serial register is used for transporting charge stored in the pixels of the
memory lines to the output amplifier. The TC247SPD device has a serial register with
twice the standard length. The first half has a conventional design that interfaces with the
memory as it would in any other CCD sensor. The second half, however, is unique and
includes 400 charge multiplication stages with a number of dummy pixels that are needed
to transport charge between the active register blocks and the output amplifier. Charge is
multiplied as it progresses from stage to stage in the multiplier toward the charge
detection node. The charge multiplication level depends on the amplitude of the
multiplication pulses (approximately 15V~22V) applied to the multiplication gate. Due to
the double length of the register, first 2 lines in each field or frame scan do not contain
valid data and should be discarded.
Charge detection node and buffer amplifier
The last element of the charge detection and readout chain is the charge detection node
with the buffer amplifier. The charge detection node is using a standard Floating
Diffusion (FD) concept followed by an on-chip, dual-stage, source-follower buffer.
Applying a pulse to the RST pin resets the detection node. Pixel charge summing
function can be easily implemented by skipping the RST pulses. To achieve the ultimate
sensor performance it is necessary to eliminate kTC noise. This is typically accomplished
by using CDS (correlated double sampling) processing techniques. IMPACTRONTM
devices have the potential for detecting single electrons (photons) when cooled
sufficiently.
TEXAS 6
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Absolute maximum ratings over operating free-air temperature range
(unless otherwise noted)*
Supply voltage range, Vss: VDD, VCLD (see Note1) 0V to 15V
Supply voltage range, Vss: ODB 0V to 22V
Input voltage range, Vi: IAG1, SAG1, SAG2 -10V to 10V
Input voltage range, Vi: IAG2 -10V to 13V
Input voltage range, Vi: SRG1, SRG2, RST 0V to 10V
Input voltage range, Vi: CMG -5V to 22V
Supply voltage range, Vcool: P+ (see Note2) 0V to 5.5V
Supply current range, Icool: P+ (see Note2) 0A to 1.4A
Supply current range, Ith: THER 0A to 0.31mA
Operating free-air temperature range, Ta -20°C to 55°C
Storage temperature range, Tstg -30°C to 85°C
Dew point inside the package (see Note2) Less than -20°C
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other
conditions beyond those indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect the device reliability.
Notes:
1. All voltage values are with respect to substrate terminal.
2. The peltier cooler generates heat during cooling process. Heat must be removed through
an external heat sink. In order to avoid condensation upon the surface do not cool the CCD to less
than -20 degrees C.
TEXAS 7
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Recommended operating conditions
Description MIN NOM MAX UNIT
Substrate bias, Vss 0.0
VDD 13.5 14.0 14.5
VCLD 13.5 14.0 14.5
Supply voltage, Vdd
ODB* 4.5 6.5
V
High 3.0 3.3 3.6
IAG1 Low -5.8 -5.5 -5.2
High 9.5 10.0 10.5
Mid 3.0 3.3 3.6
IAG2
Low -5.8 -5.5 -5.2
High 3.0 3.3 3.6
SAG1 Low -5.8 -5.5 -5.2
High 3.0 3.3 3.6
SAG2 Low -5.8 -5.5 -5.2
High 7.5 8.0 8.5
SRG1 Low 0.0
High 7.5 8.0 8.5
SRG2 Low 0.0
High 7.0 22.0
CMG** Low -3.0 -2.5 -2.0
High 5.5 6.0 6.5
Input voltage, Vi
RST Low 0.0
V
SAG1, SAG2 1.5
IAG1, IAG2 1.5
SRG1, SRG2, RST 12.5 25.0
Clock Frequency,
CMG 12.5 25.0
MHz
Load capacitance OUT 6.0 PF
Dew point inside the package *** -20 °C
Operating free-air temperature -20 25 55 °C
* Adjustment within the specified MIN – MAX range is required to optimize performance.
** Charge multiplication gain depends on high level of the CMG and temperature.
*** -20 degrees should be the minimum temperature of the cooled CCD.
TEXAS 8
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Electrical characteristics over recommended operating ranges of supply
voltage at operating free-air temperature (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
Charge multiplication gain * 1 200 2000 -
Excess noise factor for typical CCM gain (Note 3) 1 1.4 -
Dynamic range without CCM gain 63 dB
Dynamic range with typical CCM gain (Note 4) 75 dB
Charge conversion gain without CCM gain (Note 5) 14 uV/e
W Signal-response delay time (Note 6) 16 ns
Output resistance 320
Amp. Noise-equivalent signal without CCM gain ** 20 e
Amp. Noise-equivalent signal with typ. CCM gain ** 1.0 e
Response linearity with no CCM gain 1 -
Response linearity with typ. CCM gain 1 -
Parallel transfer 0.99994 1.0 - Charge-transfer efficiency
(Note 7) Serial transfer 0.99994 1.0 -
Supply current 2.0 mA
IAG1 3
IAG2 7
IAG1-IAG2 3
SAG1 4
SAG2 5
SAG1-SAG2 3
nF
SRG1 85
SRG2 55
CMG 25
ODB 2,000
Ci Input capacitance
RST 7
pF
All typical values are at Ta = 25 °C unless otherwise noted.
* Maximum CCM gain is not guaranteed.
** The values in the table are quoted using CDS = Correlated Double Sampling. CDS is a signal
processing technique that improves performance by minimizing undesirable effects of reset noise.
Notes :
3. Excess Noise Factor “F” is defined as the ratio of noise sigma after multiplication divided by M
times the noise sigma before multiplication where M is the charge multiplication gain.
4. Dynamic Range is –20 times the logarithm of the noise sigma divided by the saturation–output
signal amplitude
5. Charge conversion factor is defined as the ratio of output signal to input number of electrons.
6. Signal-response delay time is the time between the falling edge of the SRG1 pulse and the output-
signal valid state.
7. Charge transfer efficiency is one minus the charge loss per transfer in the CCD register. The test is
performed in the dark using either electrical or optical input.
TEXAS 9
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Optical characteristics
Ta = 25°C, Integration time = 16.67msec (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
No IR-cut filter 3660
Sensitivity with typical
CCM gain (Note 8) With IR-cut filter 620 V/Lx sec
No IR-cut filter 18.3 Sensitivity without
CCM gain (Note 8) With IR-cut filter 3.1 V/Lx sec
Saturation signal output no CCM gain (Note 9) 400
Saturation signal output Anti blooming Enable
no CCM gain(Note 9)
180
Saturation signal output with typ CCM gain (Note 9) 1500
Zero input offset output (Note 10) 100
mV
Blooming overload ratio (Note 11) 500:1 -
Image area well capacity 28k e
Smear (Note 12) -84 dB
Dark current (Note 13) 0.01 nA/cm2
Dark signal (Note 14) 0.01 mV
Dark 5.0 mV Spurious
non-uniformity Illuminated -30 30 %
Column uniformity (Note 15) 2.0 %
Electronic-shutter capability 1/2000 1/30 s
Notes:
8. Light source temperature is 2856 °K. The IR filter used is CM500 1mm thick.
9. Saturation is the condition in which further increase in exposure does not lead to further increases
in output signal.
10. Zero input offset is the residual output signal measured from the reset level with no input charge
present. This level is not caused by the dark current and remains approximately constant
independent of temperature. It may vary with the amplitude of SRG1.
11. Blooming is the condition in which charge induced by light in one element spills over to the
neighboring elements.
12. Smear is the measure of error signal introduced into the pixels by transferring them through the
illuminated region into the memory. The illuminated region is 1/10 of the image area height. The
value in the table is obtained for the integration time of 33.3ms and 1.5 MHz vertical clock
transfer frequency.
13. Dark current depends on temperature and approximately doubles every 8 Co. Dark current is also
multiplied by CCM operation. The value given in the table is with the multiplier turned off and it
is a calculated value.
14. Dark signal is actual device output measured in dark.
TEXAS 10
15. Column uniformity is obtain by summing all the lines in the array, finding the maximum of the
difference of two neighboring columns anywhere in the array, and dividing the result by the
number of lines.
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
FIGURE 1. Serial Register Pixel Cross Section
Polysilicon Gates SRG1
SRG2 (CMG)
F P
Pixel Cross Section
Channel Potential
X
I
TEXAS 11
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
V-Cell Clearing
Recommend over 750 Pulses
CMG
FIGURE 2-a. Progressive Scan Timing
IAG1
IAG2
SAG1
SAG2
SRG1
SRG2
Line Transfer
(*) Line # "-1" and "0" do not contain valid data
IAG1
IAG2
SAG1
SAG2
SRG1
SRG2
CMG
SRG1
SRG2
CMG
RST
682 Pulses
Line #500
(Total 502 line)
PD-Cell Readout Pulse
RST
RST
682 Pulses
Line # -1 (*)
Expanded Section of Parallel Transfer Expanded Section of Serial Transfer Expanded Section of Serial Transfer
682 Pulses
Line #0 (*)
501 Cycles
PD-Cell Clear Pulse
Transfer to Storage Area
500 Pulses
Pulse Position
Determines Exposure
TEXAS 12
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
V-Cell Clearing
Recommend over 750 Pulses
CMG
FIGURE 2-b. Interlace Timing of Line Summing Mode
IAG1
IAG2
SAG1
SAG2
SRG1
SRG2
Line Transfer
(*) Line # "-1" and "0" do not contain valid data
IAG1
IAG2
SAG1
SAG2
SRG1
SRG2
CMG
SRG1
SRG2
CMG
RST
682 Pulses
Line #250
(Total 252 line)
PD-Cell Readout Pulse
RST
RST
682 Pulses
Line # -1 (*)
Expanded Section of Parallel Transfer Expanded Section of Serial Transfer Expanded Section of Serial Transfer
682 Pulses
Line #0 (*)
251 Cycles
PD-Cell Clear Pulse
Transfer to Storage Area
A-field = 500 Pulses
B-field = 501 Pulses
Pulse Position
Determines Exposure
Line Summing
TEXAS 13
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
㱠 : Signal-response delay
FIGURE 3. Serial register Clock Timing for CDS Implementation
* Output signal may not be zero for zero input charge.
RST
SRG1
SRG2
Reset Level
Vout
Clamp
S/H
Zero Offset Signal
CMG
Reference
Level
Output Signal *
TEXAS 14
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
FIGURE 4. Detailed output signal
658 Active signal
2 Dark signal
2 Dummy signal
20 Dark signal
* Due to light leakage into the edge pixels of the 20 dark reference pixels it is recommended
that these 12 pixels be used for true dark reference.
512*3
TEXAS 15
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
FIGURE 5. Serial Transfer Timing (12.5HMz applications)
SRG1
SRG2
CMG
Ts
Ts1 Ts2
10%
90%
Tr Tf
MIN MAX UNIT
SRG1
ns
SRG2
CMG
CMG
SRG1
SRG2
Tr
Tf
UNIT
ns
MIN MAXTYP
Ts1
Ts2
40
40
Tsx 8
Ts 80
3
3
8
8
3 8
3
3
8
8
3 8
Tsx
Tf
Tf
Tf
Tr
Tr
Tr
35
35
75
45
45
85
TEXAS 16
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Tp 664
FIGURE 6. Vertical Transfer Timing (1.5 MHz application)
IAG2
SAG2
IAG1
UNIT
ns
MIN MAXTYP
SAG1
10%
90%
Tp
Tpx
Tp1
Tp2
260
330
TfTr
Tp1
230
300
290
360
Tp2
Tp1
Tpx 50
40 60
Tpx Tp2
MIN MAX UNIT
ns
SAG1,2
IAG1,2
SAG1,2
IAG1,2
Tr
Tf
15
15
25
25
15
15
25
25
TEXAS 17
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
18
TEXAS
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
FIGURE 8. Typical PD-Readout and Exposure Control Timing
SAG1
SAG2
Minimum 800ns
FIGURE 7. Typical Line Transfer Timing
CMG
SRG2
SRG1
CMG SRG1,2
SAG1,2
IAG2
Tl1
Tl2
UNIT
ns
MIN MAXTYP
Tl1*
Tl2*
IAG1
Tpd
0H 1H500H -1H
499H V-Blanking (23H)
Pulse Position
Determines Exposure
Tpdx*
* Tpdx : as shorter as possible
** Hold time of Storage area : Recommend shorter than 300usec
PD-Cell Readout Pulse PD-Cell Clear Pulse
Hold time of Storage area**
Tlx
260
330
230
300
290
360
5040 60Tlx*
* Line Transfer Timing : Same timing as 1.5MHz vertical transfer
682 Pulses
H-Blanking
Tpdc
UNIT
us
MIN MAXTYP
Tpd
Tpdc
1.5
1.5
1.0
1.0
2.0
2.0
1.0Tpdx*
MIN MAX UNIT
ns
Tpd,Tpdc
Tr
Tf
250 1000
100 1000
Tpd,Tpdc
Minimum 800ns
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
0.0
5.0
10.0
15.0
20.0
25.0
30.0
400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100
Wave Length [nm]
Responsivity [V/uJ/cm2]
FIGURE 9. Typical Spectral Responsivity
0%
10%
20%
30%
40%
50%
60%
70%
400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100
Wave Length [nm]
Quantum Efficiency [%]
FIGURE 10. Typical Spectral Quantum Efficiency
TEXAS 19
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
0
200
400
600
800
1000
1200
1400
1600
1800
2000
18 18.2 18.4 18.6 18.8 19 19.2 19.4 19.6 19.8 20 20.2
CMG High Voltage [V]
CM Gain
23 deg C
10 deg C
0 deg C
-9 deg C
-20 deg C
FIGURE 11. Typical Variation of Multiplication Gain with CMG High Voltage
-30
-20
-10
0
10
20
30
40
50
0.2 0.4 0.6 0.8 1 1.2 1.4
Peltier Supply Current [A]
CCD Temperature [deg C]
Ta = 60°C
Ta = 50°C
Ta = 40°C
Ta = 30°C
Ta = 20°C
Ta = 10°C
Ta = 0°C
Ta =-10°C
Please observe the absolute minimum temperature of the CCD, -20 °C.
Measurement Conditions
Heat sink : 3.3°C/W
A
ir flow : 4.3m/s
CCD drive : ON
FIGURE 12. Typical Cooling Capability
TEXAS 20
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
0
10
20
30
40
50
60
70
80
90
100
110
120
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
45
50
Temperature [deg C]
Resistance [k-Ohm]
Resistance (25°C)
: 10k ohm ±1%
B-Constant (25-50°C)
: 3380K ±1%
FIGURE 13. Typical Thermistor Characteristics
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
-20
-19
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
Temperature [deg C]
Resistance [k-Ohm]
Resistance (25°C)
: 10k ohm ±1%
B-Constant (25-50°C)
: 3380K ±1%
FIGURE 14. Typical Thermistor Characteristics (Detail)
TEXAS 21
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
+3.0V
-6.0V
+5.0V +11.0V
-6.0V
IAG1 OUT
IAG2 OUT
IAG1 IN
IAG2-1 IN
OE IAG2-2
IAG2-2 IN
10
EL7156CS
VS+
1
OE
2
IN
3
GND
4
VH 8
OUT 7
VL 6
VS- 5
EL7156CS
VS+
1
OE
2
IN
3
GND
4
VH 8
OUT 7
VL 6
VS- 5
10
0.1uF 100uF/16V
+
1.0k
1.0k
2.2
2.2
EL7156CS
VS+
1
OE
2
IN
3
GND
4
VH 8
OUT 7
VL 6
VS- 5
2.2
0.1uF
10
100uF/16V
+
RB050L-40
10
HN1A01F
1.0k
10
3.9k
10
1.0k
0.1uF 0.1uF
10
1.0k
1.0k
10
HN1A01F
0.1uF 100uF/16V
+
0.1uF
HN1A01F
10
1.0k
10
1.0k
10
1.0k
1.0k
10
HN1A01F
1.0k
IAG2-1 IN
IAG2 OUT
IAG2-2 IN
OE IAG2-2
FIGURE 15. Typical IAG Driver Circuits
TEXAS 22
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
+3.0V
-6.0V
+5.0V
-6.0V
+5.0V
SAG1 OUT
SAG2 OUT
SAG1 IN
SAG2 IN
10
VS+
1
OE
2
IN
3
GND
4
VH 8
OUT 7
VL 6
VS- 5
EL7156CS
VS+
1
OE
2
IN
3
GND
4
VH 8
OUT 7
VL 6
VS- 5
10
100uF/16
V
+
0.1uF
1.0k
1.0k
2.2
2.2
0.1uF 100uF/16V
+
HN1A01F
1.0k
10
3.9k
470
470
0.1uF 0.1uF
10
1.0k
470
470
0.1uF
HN1A01F
0.1uF 100uF/16
V
+
1.0k
10
10
1.0k
1.0k
FIGURE 16. Typical SAG Driver Circuits
+8.0V
SRG1 OUT
SRG1 IN
SRG2 IN
RST IN
SRG2 OUT
RST OUT
1.0k
100uF/16V
+
0.1uF
33
EL7457CS
INA
1
OE
2
INB
3
VL
4
IND
8
INC
7
NC
6
GND
5
Vs- 9
OUTD 10
OUTC 11
VH 12
NC 13
OUTB 14
OUTA 15
Vs+ 16
10
10
10
33
68
FIGURE 17. Typical SRG and RST Driver Circuits
TEXAS 23
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Vcmgh
Vcmgl
+5.0V
CMG OUT
CMG IN
1SS355
10k
10k
TP2104N3
TN2106N3
33
33
1SS355
1.0uF
1SS355 1SS355
2200pF
2.7k
1SS355 1SS355
2200pF
100uF/33V
+
0.1uF
0.1uF
100uF/16V
+
1.0uF
SN74AHCT244PW
1G
1
1A1
2
2Y4
3
1A2
4
2Y3
5
1A3
6
2Y2
7
1A4
8
2Y1
9
GND
10 2A1 11
1Y4 12
2A2 13
1Y3 14
2A3 15
1Y2 16
2A4 17
1Y1 18
2G 19
Vcc 20
10
10
10
10
10
10
10
10
100uF/16V
+
0.1uF
FIGURE 18. Typical CMG Driver Circuits
TEXAS 24
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
Mechanical data
The package for the TC247SPD consists of a ceramic base, a glass window, and a 24-pin
lead frame. The glass window is hermetically sealed to the package. The package leads
are configured in a dual-in-line arrangement and fit into mounting holes with 1,78 mm
center-to-center spacing.
Attention
Be careful when attaching an external heat sink to the package. Fastening it too strongly
may crack or puncture the package, making it susceptible to moisture or humidity.
TEXAS 25
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
TEXAS 26
䎋 䎌
䎋 䎌
䎋 䎌
䎋 䎌
䎋 䎌
䎋 䎌
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
TC247SPD-B0
680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR
SOCS091 - DECEMBER 2004 - REVISED MARCH 2005
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TEXAS 27
INSTRUMENTS
POST OFFICE BOX 655303 * DALLAS TEXAS 75265
