Parameters IRK.26 Units
IT(AV) or IF(AV)
@ 85°C
IO(RMS) (*) 60 A
ITSM @ 50Hz 400 A
IFSM @ 60Hz 420 A
I2t @ 50Hz 800 A2s
@ 60Hz 730 A2s
I2√t 8000 A2√s
VRRM range 400 to 1600 V
TSTG - 40 to 125 oC
TJ- 40 to125 oC
(*) As AC switch.
27 A
Major Ratings and Characteristics
27 A
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.26 SERIES
Bulletin I27130 rev. G 10/02
1
www.irf.com
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Electrical Description
These modules are intended for general purpose
high voltage applications such as high voltage regu-
lated power supplies, lighting circuits, temperature
and motor speed control circuits, UPS and battery
charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other IR modules.
IRK.26 Series
2
Bulletin I27130 rev. G 10/02
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VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.26 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
IT(AV) Max. average on-state
current (Thyristors) 27 180o conduction, half sine wave,
IF(AV) Max. average forward 27 TC = 85oC
current (Diodes)
IO(RMS)Max. continuous RMS
on-state current.
As AC switch
ITSM Max. peak, one cycle 400 t=10ms No voltage
or non-repetitive on-state 4 20 t=8.3ms reapplied
IFSM or forward current 335 t=10ms 100% VRRM
350 t=8.3ms reapplied
470 t=10ms TJ = 25oC,
490 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing 800 t=10ms No voltage
730 t=8.3ms reapplied
560 t=10ms 100% VRRM
510 t=8.3ms reapplied
1100 t=10ms TJ = 25oC,
1000 t=8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 8000 A2√s t= 0.1 to 10ms, no voltage reappl. TJ =TJ max
VT(TO) Max. value of threshold 0.92 Low level (3)
voltage (2) 0.95 High level (4)
rtMax. value of on-state 12.11 Low level (3)
slope resistance (2) 11.82 High level (4)
VTM Max. peak on-state or ITM = π x IT(AV) TJ = 25oC
VFM forward voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on 150 A/µs ITM =π x IT(AV), Ig = 500mA,
current tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
TJ = TJ max
TJ = TJ max
Parameters IRK.26 Units Conditions
60
(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
On-state Conduction
Initial TJ = TJ max.
A
A2s
V
mΩ
1.95 V
mA
or
I(RMS) I(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Sinusoidal
half wave,
Initial TJ = TJ max.
IRK.26 Series
3
Bulletin I27130 rev. G 10/02
www.irf.com
TJJunction operating
temperature range
Tstg Storage temp. range - 40 to 125
RthJC Max. internal thermal
resistance, junction 0.31 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRK.26 Units Conditions
- 40 to 125
0.1
5
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.
°C
K/W
Nm
Mounting surface flat, smooth and greased
IRRM Max. peak reverse and
IDRM off-state leakage current 15 mA TJ = 125oC, gate open circuit
at VRRM, VDRM
VINS RMS isolation voltage 2500 (1 min) V 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise 500 V/µsT
J = 125oC, linear to 0.67 VDRM,
Triggering
Blocking
PGM Max. peak gate power 10
PG(AV) Max. average gate power 2.5
IGM Max. peak gate current 2.5 A
-VGM Max. peak negative
gate voltage
4.0 TJ = - 40°C
2.5 TJ = 25°C
1.7 TJ = 125°C
270 TJ = - 40°C
150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
0.25 V
6mA
Anode supply = 6V
resistive load
VGT Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
IGT Max. gate current
required to trigger
W
V
10
TJ = 125oC,
rated VDRM applied
TJ = 125oC,
rated VDRM applied
Parameters IRK. 26 Units Conditions
Parameters IRK. 26 Units Conditions
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRK.26 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 °C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
IRK.26 Series
4
Bulletin I27130 rev. G 10/02
www.irf.com
IRK T 26 / 16 A S90
Device Code
12 3 45
Ordering Information Table
6
* * Available with no auxiliary cathode.
To specify change: 26 to 27
e.g. : IRKT27/16A etc.
IRK.27 types
With no auxiliary cathode
Outline Table
+
K2 G2
-
K1G1
~
(1)
(2)
(3)
(4) (5) (7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
Dimensions are in millimeters and [inches]
IRKT IRKH IRKL
NOTE: To order the Optional Hardware see Bulletin I27900
1- Module type
2- Circuit configuration (See Circuit Configuration table below)
3- Current code * *
4- Voltage code (See Voltage Ratings table)
5- A : Gen V
6- dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
IRKN
+
-
K1
G1
+
(1)
(2)
(3)
(4) (5)
IRK.26 Series
5
Bulletin I27130 rev. G 10/02
www.irf.com
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0 5 10 15 20 25 30
Maximum Allowable Case Temperature ( °C)
30° 60° 90° 120° 180°
Average On-state Current (A)
Condu ct ion A ng le
IRK.26.. Series
R (DC) = 0.62 K/W
thJC
80
90
100
110
120
130
0 1020304050
DC
30° 60° 90° 120°
180°
Av erage On-state Current (A)
Maximum Allow able Case Temperature (°C)
Con du c ti on Pe r iod
IRK.2 6 .. S eries
R (DC) = 0.62 K/W
thJC
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
0
10
20
30
40
50
0 5 10 15 20 25 30
180°
120°
90°
60°
30°
RMS Limit
Con duc ti on A ng le
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
IRK.26.. Series
Per Junction
T = 125°C
J
0
10
20
30
40
50
60
70
01020304050
DC
180°
120°
90°
60°
30° RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
A ver age On-st ate Curren t (A)
IRK.26.. Series
Per Junction
T = 125°C
J
150
200
250
300
350
400
1 10 100
Number Of Equal Amplitude H alf Cycle Current Pulses (N)
Peak H alf Sine Wave On-state Cur rent (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
IRK.26.. Series
Per Junct ion
150
200
250
300
350
400
0.01 0.1 1
Pulse Tra i n Duration (s)
Versus Pulse Train Duration. Control
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
IRK.26.. Series
Per Junction
IRK.26 Series
6
Bulletin I27130 rev. G 10/02
www.irf.com
Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 7 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum All owa ble Ambient Temp erature (°C)
1 K/W
1.5 K/W
2 K/W
R = 0.1 K/W - Delta R
thSA
0.3 K/W
0.5 K/W
4 K/W
0.7 K/W
3 K/W
8 K/W
0
10
20
30
40
50
60
70
80
90
100
0
10 20 30 40 50 60
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Condu c tion Angle
IRK.26.. Series
Per Module
T = 125°C
J
0 20 40 60 80 100 120 140
Max imum Allo wable Ambie nt Temperatur e (°C)
1 K/W
1.5 K/W
0.2 K/W
0.3 K/W
0.5 K/W
0.7 K/W
3 K/W
8 K/W
R = 0.1 K/W - Delta R
thSA
0
50
100
150
200
250
0 102030405060
Total Outp ut Curr ent (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.26.. Series
Single Phase Bridge
Connected
T = 125°C
J
0 20406080100120140
Maximum Allowable Ambient Temperatur e (°C)
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
3 K/W
0.4 K/W
0
50
100
150
200
250
300
350
0 1020304050607080
Total Outpu t Cur rent (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x IRK.26.. Series
Three Phas e Bridge
Connected
T = 125°C
J
IRK.26 Series
7
Bulletin I27130 rev. G 10/02
www.irf.com
Fig. 10 - On-state Voltage Drop Characteristics
1
10
100
1000
01234567
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneou s O n-sta te Voltage (V)
T = 125°C
J
IRK.26.. Series
Per Junction
Fig. 12- Gate Characteristics
Fig. 11 - Thermal Impedance ZthJC Characteristics
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Steady State Value:
R = 0.62 K/W
(DC Operation)
thJC
thJC
Tra nsient Thermal Impeda nce Z (K/W)
IRK.26.. Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b) (a)
Rec tangu lar gate pulse
(4) (3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PG M = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PG M = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
Ins tantaneo us Ga te Vol tage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a)Recomme nded load line f or
b)Recommen de d lo ad line for
VGD
IGD
Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µ s, tp >= 6 µ s
IRK.26.. Series
IRK.26 Series
8
Bulletin I27130 rev. G 10/02
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
