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BFR340L3
Low Noise Silicon Bipolar RF Transistor
• Low voltage/ Low current operation
• Transition frequency of 14 GHz
• High insertion gain
• Ideal for low current amplifiers and oscillators
• Pb-free (RoHS compliant) and halogen-free thin small
leadless package
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR340L3 FA 1 = B 2 = E 3 = C TSLP-3-1
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC10 mA
Base current IB2
Total power dissipation1)
TS ≤ 120°C
Ptot 60 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 500 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 1 µA
DC current gain
IC = 5 mA, VCE = 3 V, pulse measured
hFE 90 120 160 -
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BFR340L3
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 6 mA, VCE = 3 V, f = 1 GHz
fT10 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.17 0.4 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.13 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.12 -
Minimum noise figure
IC = 1 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz
NFmin - 1.15 - dB
Power gain, maximum stable1)
IC = 5 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt, f = 1.8 GHz
Gms - 17.5 - -
Power gain, maximum available1)
IC = 5 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 3 GHz
Gma - 13 - dB
Transducer gain
IC = 5 mA, VCE = 3 V, ZS = ZL = 50Ω ,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
14
10
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 5 mA, f = 1.8 GHz,
ZS = ZL = 50Ω
IP3 - 12.5 - dBm
1dB compression point at output
IC = 5 mA, VCE = 3 V, ZS = ZL = 50Ω ,
f = 1.8 GHz
P-1dB - -1 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR340L3
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
mW
70
Ptot
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BFR340L3
Package TSLP-3-1
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BFR340L3
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
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