NTA7002N, NVTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 http://onsemi.com Features * * * * * Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant RDS(on) Typ @ VGS V(BR)DSS ID MAX (Note 1) 1.4 W @ 4.5 V 30 V 154 mA 2.3 W @ 2.5 V 3 Applications * Power Management Load Switch * Level Shift * Portable Applications such as Cell Phones, Media Players, 1 2 N-Channel Digital Cameras, PDA's, Video Games, Hand-Held Computers, etc. PIN CONNECTIONS MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter SC-75 (3-Leads) Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS "10 V Continuous Drain Current (Note 1) Steady State = 25C ID 154 mA Power Dissipation (Note 1) Steady State = 25C PD 300 mW tP v 10 ms IDM 618 mA TJ, TSTG -55 to 150 C Continuous Source Current (Body Diode) ISD 154 mA Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Pulsed Drain Current Operating Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Symbol Max Unit RqJA 416 C/W 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). (c) Semiconductor Components Industries, LLC, 2012 October, 2012 - Rev. 5 1 Gate 1 3 Source Drain 2 (Top View) MARKING DIAGRAM 3 3 2 T6 MG SC-75 / SOT-416 G CASE 463 1 2 STYLE 5 T6 = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: NTA7002N/D NTA7002N, NVTA7002N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 100 mA 30 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V, T = 85 C 1.0 mA Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 10 V 25 mA Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 5 V 1.0 mA Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 5 V T = 85 C 1.0 mA Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 100 mA 1.0 1.5 V Drain-to-Source On Resistance RDS(on) VGS = 4.5 V, ID = 154 mA 1.4 7.0 VGS = 2.5 V, ID = 154 mA 2.3 7.5 VDS = 3 V, ID = 154 mA 80 OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Forward Transconductance gFS 0.5 W mS CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 5.0 V, f = 1 MHz, VGS = 0 V 11.5 20 10 15 3.5 6.0 pF SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 13 VGS = 4.5 V, VDS = 5.0 V, ID = 75 mA, RG = 10 W tf ns 15 98 ns 60 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 154 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.77 0.9 V NTA7002N, NVTA7002N TYPICAL PERFORMANCE CURVES VGS = 10 V 5V 2.8 V 2.4 V 0.18 0.16 0.14 0.2 TJ = 25C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 0.2 2V 0.12 0.1 0.08 0.06 0.04 1.4 V 0.02 1.2 V 0 0 0.8 0.4 1.2 0.16 0.12 0.08 TJ = 125C 0.04 TJ = 25C 0 0.6 2.0 1.6 VDS = 5 V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2.5 VGS = 4.5 V TJ = 125C 2 1.5 TJ = 25C 1 TJ = -55C 0.5 0.2 0.1 0.15 0.05 ID, DRAIN CURRENT (AMPS) 0 2.5 1.6 VGS = 2.5 V 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 0.2 Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1000 ID = 0.15 A VGS = 4.5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 TJ = 25C 2 Figure 3. On-Resistance vs. Drain Current and Temperature 1.8 1.2 0.8 1 1.4 1.6 1.8 2 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 1. On-Region Characteristics TJ = -55C 1.4 1.2 1 0.8 0.6 VGS = 0 V 100 TJ = 150C 10 TJ = 125C 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 1 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTA7002N, NVTA7002N TYPICAL PERFORMANCE CURVES 20 Ciss 1000 TJ = 25C VDD = 5.0 V ID = 75 mA VGS = 4.5 V Crss 15 10 Ciss td(off) tf 100 tr td(on) 10 Coss 5 0 10 t, TIME (ns) C, CAPACITANCE (pF) 25 VDS = 0 V 5 VGS = 0 V 0 VGS Crss 5 10 15 1 20 VDS 1 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) IS, SOURCE CURRENT (AMPS) 0.14 100 Figure 8. Resistive Switching Time Variation vs. Gate Resistance Figure 7. Capacitance Variation 0.16 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25C 0.12 0.1 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.7 0.75 0.65 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 0.8 Figure 9. Diode Forward Voltage vs. Current ORDERING INFORMATION Package Shipping NTA7002NT1G SC-75 (Pb-Free) 3000 / Tape & Reel NVTA7002NT1G SC-75 (Pb-Free) 3000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTA7002N, NVTA7002N PACKAGE DIMENSIONS SC-75 / SOT-416 CASE 463 ISSUE F -E- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e -D- DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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