NTA7002NT1G/BKN - ON Semiconductor

October, 2012 − Rev. 5

1Publication Order Number:

NTA7002N/D

NTA7002N, NVTA7002N

Small Signal MOSFET

30 V, 154 mA, Single, N−Channel, Gate

ESD Protection, SC−75

Features

•Low Gate Charge for Fast Switching

•Small 1.6 x 1.6 mm Footprint

•ESD Protected Gate

•NV Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Applications

•Power Management Load Switch

•Level Shift

•Portable Applications such as Cell Phones, Media Players,

Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 30 V

Gate−to−Source Voltage VGS "10 V

Continuous Drain

Current (Note 1)

Steady State = 25°C ID154 mA

Power Dissipation

(Note 1)

Steady State = 25°C PD300 mW

Pulsed Drain Current tP v 10 msIDM 618 mA

Operating Junction and Storage Temperature TJ,

TSTG

−55 to

150

°C

Continuous Source Current (Body Diode) ISD 154 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State (Note 1) RqJA 416 °C/W

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2.3 W @ 2.5 V

(Top View)

SC−75 / SOT−416

CASE 463

STYLE 5

SC−75 (3−Leads)

Drain

Gate

Source

RDS(on)

Typ @ VGS

ID MAX

(Note 1)

V(BR)DSS

1.4 W @ 4.5 V

30 V 154 mA

N−Channel

MARKING DIAGRAM

T6 = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

T6 MG

PIN CONNECTIONS

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See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

NTA7002N, NVTA7002N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA30 V

Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA

Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V,

T = 85 °C

1.0 mA

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±25 mA

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±1.0 mA

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V

T = 85 °C

±1.0 mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 100 mA0.5 1.0 1.5 V

Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 154 mA 1.4 7.0

VGS = 2.5 V, ID = 154 mA 2.3 7.5

Forward Transconductance gFS VDS = 3 V, ID = 154 mA 80 mS

CAPACITANCES

Input Capacitance CISS

VDS = 5.0 V, f = 1 MHz,

VGS = 0 V

11.5 20

Output Capacitance COSS 10 15

Reverse Transfer Capacitance CRSS 3.5 6.0

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time td(ON)

VGS = 4.5 V, VDS = 5.0 V,

ID = 75 mA, RG = 10 W

13 ns

Rise Time tr15

Turn−Off Delay Time td(OFF) 98

Fall Time tf60

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V, IS = 154 mA 0.77 0.9 V

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

NTA7002N, NVTA7002N

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TYPICAL PERFORMANCE CURVES

TJ = 125°C

0.16

1.60.4

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

0.12

0.04

Figure 1. On−Region Characteristics

0.6 1.4 2

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.5

Figure 3. On−Resistance vs. Drain Current and

Temperature

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−50 0−25 25

0.2

50 150

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.05

TJ = −55°C

TJ = 125°C

TJ = 25°C

ID = 0.15 A

VGS = 4.5 V

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

TJ = 25°C

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

1.2

VGS = 2.5 V

0 0.15

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

IDSS, LEAKAGE (nA)

TJ = 150°C

TJ = 125°C

VGS = 4.5 V

100

2 V

VDS = 5 V

1.4 V

0.08

1.2 V

0.1

0.2

0.18 VGS = 10 V

2.5

125100 0

2.0

105

1.20.8 1.2

1.5

0.2

VGS = 4.5 V

TJ = 25°C

TJ = −55°C

ID, DRAIN CURRENT (AMPS)

21000

5 V

2.4 V

1.81

0.5

0.050 0.150.1

2.5

1.5

0.2

0.4

1.4

0.6

1.6

0.8

1.8

0.14

0.1

0.02

0.06

2.8 V 0.16

0.12

0.04

0.08

0.2

0.8 1.6

NTA7002N, NVTA7002N

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TYPICAL PERFORMANCE CURVES

Figure 7. Capacitance Variation

0.02

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 8. Resistive Switching Time

Variation vs. Gate Resistance

IS, SOURCE CURRENT (AMPS)

VGS = 0 V

TJ = 25°C

0.16

0.5 0.65

Figure 9. Diode Forward Voltage vs. Current

0.80.6

0.08

0.06

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

10 0 5 105

TJ = 25°C

Ciss

Coss

Crss

Ciss

Crss

VDS = 0 V VGS = 0 V

VDS

VGS RG, GATE RESISTANCE (OHMS)

1 10 100

100

t, TIME (ns)

VDD = 5.0 V

ID = 75 mA

VGS = 4.5 V

td(on)

1000

td(off)

0.04

0.70.55

0.14

0.12

0.1

0.75

ORDERING INFORMATION

Device Package Shipping†

NTA7002NT1G SC−75

(Pb−Free)

3000 / Tape & Reel

NVTA7002NT1G SC−75

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTA7002N, NVTA7002N

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PACKAGE DIMENSIONS

SC−75 / SOT−416

CASE 463

ISSUE F

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) D

−E−

−D−

3 PL

0.20 (0.008) E

DIM MIN NOM MAX

MILLIMETERS

A0.70 0.80 0.90

A1 0.00 0.05 0.10

C0.10 0.15 0.25

D1.55 1.60 1.65

e1.00 BSC

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.059 0.063 0.067

0.04 BSC

MIN NOM MAX

INCHES

0.15 0.20 0.30 0.006 0.008 0.012

L0.10 0.15 0.20

1.50 1.60 1.70

0.004 0.006 0.008

0.061 0.063 0.065

0.70 0.80 0.90 0.027 0.031 0.035

0.787

0.031

0.508

0.020 1.000

0.039

ǒmm

inchesǓ

SCALE 10:1

0.356

0.014

1.803

0.071

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Phone: 81−3−5817−1050

NTA7002N/D

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