SH8M24
45V Nch+Pch Power MOSFET Datasheet
llOutline
Symbol Tr1:Nch Tr2:Pch
VDSS 45V -45V
RDS(on)(Max.) 46mΩ 63mΩ SOP8
ID±6A ±6A
PD3.1W
llFeatures ll Inner circuit
1) Low on - resistance.
2) Small Surface Mount Package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
llPackaging specifications
Type
Packing Embossed
Tape
llApplication Reel size (mm) 330
Switching Tape width (mm) 12
Basic ordering unit (pcs) 2500
Taping code TB
Marking SH8M24
llAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Tr1:Nch Tr2:Pch
Drain - Source voltage VDSS 45 -45 V
Continuous drain current ID*1 ±6 ±6 A
Pulsed drain current IDP*2 ±18 ±14 A
Gate - Source voltage VGSS ±20 ±20 V
Power dissipation total
PD*1 3.1
W
PD*3 2.0
PD*4 1.4
Junction temperature Tj150 ℃
Operating junction and storage temperature range Tstg -55 to +150 ℃
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© 2016 ROHM Co., Ltd. All rights reserved. 1/19 20161004 - Rev.002
SH8M24 Datasheet
llThermal resistance
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - ambient total RthJA
*3 - - 62.5 ℃/W
RthJA
*4 - - 89.2
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Type Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS
Tr1 VGS = 0V, ID = 1mA 45 - - V
Tr2 VGS = 0V, ID = -1mA -45 - -
Breakdown voltage
temperature coefficient
ΔV(BR)DSS
Tr1 ID = 1mA, referenced to 25℃- 46.8 - mV/℃
ΔTj Tr2 ID = -1mA, referenced to 25℃- -50 -
Zero gate voltage
drain current IDSS
Tr1 VDS = 45V, VGS = 0V - - 1 μA
Tr2 VDS = -45V, VGS = 0V - - -1
Gate - Source
leakage current IGSS
Tr1 VDS = 0V, VGS = ±20V - - ±10 μA
Tr2 VDS = 0V, VGS = ±20V - - ±10
Gate threshold
voltage VGS(th)
Tr1 VDS = 10V, ID = 1mA 1.0 - 2.5 V
Tr2 VDS = -10V, ID = -1mA -1.0 - -2.5
Gate threshold voltage
temperature coefficient
ΔVGS(th) Tr1 ID = 1mA, referenced to 25℃- -3.9 - mV/℃
ΔTj Tr2 ID = -1mA, referenced to 25℃- 3.3 -
Static drain - source
on - state resistance RDS(on)*5
Tr1
VGS = 10V, ID = 4.5A - 33 46
mΩ
VGS = 4.5V, ID = 4.5A - 41 57
VGS = 4.0V, ID = 4.5A - 46 64
Tr2
VGS = -10V, ID = -3.5A - 45 63
VGS = -4.5V, ID = -3.5A - 60 84
VGS = -4.0V, ID = -3.5A - 66 92
Gate resistance RG
Tr1 f=1MHz, open drain - 5.0 - Ω
Tr2 - 6.0 -
Forward Transfer
Admittance |Yfs|*5 Tr1 VDS = 10V, ID = 4.5A 3.5 - - S
Tr2 VDS = -10V, ID = -3.5A 4.5 - -
*1 Pw ≦ 1s, Mounted on a ceramic board (30×30×0.8mm), Limited only by maximum temperature allowed.
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (25×25×0.8mm)
*5 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved. 2/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristics (Ta = 25°C)
<Tr1>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 550 -
pFOutput capacitance Coss VDS = 10V - 140 -
Reverse transfer capacitance Crss f = 1MHz - 70 -
Turn - on delay time td(on)*5 VDD ⋍ 25V, VGS = 10V - 12 -
ns
Rise time tr*5 ID = 2.5A - 18 -
Turn - off delay time td(off)*5 RL = 10Ω - 42 -
Fall time tf*5 RG = 10Ω - 12 -
<Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 1700 -
pFOutput capacitance Coss VDS = -10V - 200 -
Reverse transfer capacitance Crss f = 1MHz - 135 -
Turn - on delay time td(on)*5 VDD ⋍ -25V, VGS = -10V - 16 -
ns
Rise time tr*5 ID = -2.0A - 17 -
Turn - off delay time td(off)*5 RL = 12.4Ω - 70 -
Fall time tf*5 RG = 10Ω - 14 -
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© 2016 ROHM Co., Ltd. All rights reserved. 3/19 20161004 - Rev.002
SH8M24 Datasheet
llGate charge characteristics (Ta = 25°C)
<Tr1>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*5
VDD ⋍ 25V, ID = 6A
VGS = 5V
- 6.8 9.6
nCGate - Source charge Qgs*5 - 2.0 -
Gate - Drain charge Qgd*5 - 2.9 -
<Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*5
VDD ⋍ -25V, ID = -3.5A
VGS = -5V
- 13 18.2
nCGate - Source charge Qgs*5 - 3.6 -
Gate - Drain charge Qgd*5 - 4.7 -
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Continuous forward current IS Ta = 25℃- - 1.66
A
Pulse forward current ISP*2 - - 18
Forward voltage VSD*5 VGS = 0V, IS = 4.5A - - 1.2 V
<Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Continuous forward current IS Ta = 25℃- - -1.66
A
Pulse forward current ISP*2 - - -14
Forward voltage VSD*5 VGS = 0V, IS = -3.5A - - -1.2 V
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© 2016 ROHM Co., Ltd. All rights reserved. 4/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2016 ROHM Co., Ltd. All rights reserved. 5/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2016 ROHM Co., Ltd. All rights reserved. 6/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Forward Transfer Admittance vs.
Drain Current
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© 2016 ROHM Co., Ltd. All rights reserved. 7/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
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© 2016 ROHM Co., Ltd. All rights reserved. 8/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(Ⅳ)
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© 2016 ROHM Co., Ltd. All rights reserved. 9/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.18 Typical Capacitance vs. Drain -
Source Voltage
Fig.19 Switching Characteristics
Fig.20 Dynamic Input Characteristics Fig.21 Source Current vs. Source Drain
Voltage
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© 2016 ROHM Co., Ltd. All rights reserved. 10/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2016 ROHM Co., Ltd. All rights reserved. 11/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2016 ROHM Co., Ltd. All rights reserved. 12/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Forward Transfer Admittance vs.
Drain Current
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© 2016 ROHM Co., Ltd. All rights reserved. 13/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
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© 2016 ROHM Co., Ltd. All rights reserved. 14/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(Ⅳ)
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© 2016 ROHM Co., Ltd. All rights reserved. 15/19 20161004 - Rev.002
SH8M24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.18 Typical Capacitance vs. Drain -
Source Voltage
Fig.19 Switching Characteristics
Fig.20 Dynamic Input Characteristics Fig.21 Source Current vs. Source Drain
Voltage
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© 2016 ROHM Co., Ltd. All rights reserved. 16/19 20161004 - Rev.002
SH8M24 Datasheet
llMeasurement circuits <Tr1>
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
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© 2016 ROHM Co., Ltd. All rights reserved. 17/19 20161004 - Rev.002
SH8M24 Datasheet
llMeasurement circuits <Tr2>
Fig.3-1 Switching Time Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform
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© 2016 ROHM Co., Ltd. All rights reserved. 18/19 20161004 - Rev.002
SH8M24 Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 19/19 20161004 - Rev.002
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