AUIRF6218S
AUIRF6218L
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low On-Resistance
P-Channel MOSFET
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
1 2015-11-16
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
VDSS -150V
RDS(on) max. 150m
ID -27A
D2Pak
AUIRF6218S
S
D
G
G D S
Gate Drain Source
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -27
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -19
IDM Pulsed Drain Current -110
PD @TC = 25°C Maximum Power Dissipation 250 W
Linear Derating Factor 1.6 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 210
mJ
IAR Avalanche Current -16 A
dv/dt Peak Diode Recovery 8.2 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.61
°C/W
RJA Junction-to-Ambient ( PCB Mount, steady state) ––– 40
S
D
G
D
TO-262
AUIRF6218L
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF6218L TO-262 Tube 50 AUIRF6218L
AUIRF6218S D2-Pak Tube 50 AUIRF6218S
Tape and Reel Left 800 AUIRF6218STRL
AUIRF6218S/L
2 2015-11-16
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.6mH, RG = 25, IAS = -17A.
ISD -17A, di/dt 520A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
R is measured at TJ of approximately 90°C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 120 150 mVGS = -10V, ID = -16A
VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V VDS = VGS, ID = -250µA
gfs Forward Trans conductance 11 ––– ––– S VDS = -50V, ID = -16A
IDSS Drain-to-Source Leakage Current ––– ––– -25 µA VDS = -120V, VGS = 0V
––– ––– -250 VDS = -120V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 71 110
nC
ID = -16A
Qgs Gate-to-Source Charge ––– 21 ––– VDS = -120V
Qgd Gate-to-Drain Charge ––– 32 ––– VGS = -10V
td(on) Turn-On Delay Time ––– 21 –––
ns
VDD = -75V
tr Rise Time ––– 70 ––– ID = -16A
td(off) Turn-Off Delay Time ––– 35 ––– RG= 3.9
tf Fall Time ––– 30 ––– VGS = -10V
Ciss Input Capacitance ––– 2210 –––
pF
VGS = 0V
Coss Output Capacitance ––– 370 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 89 ––– ƒ = 1.0MHz
Coss Output Capacitance ––– 2220 ––– VGS = 0V,VDS = -1.0V,ƒ = 1.0MHz
Coss Output Capacitance ––– 170 ––– VGS = 0V,VDS = -120V,ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 340 ––– VGS = 0V,VDS = 0V to -120V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -27
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– -110 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C,IS = -16A,VGS = 0V
trr Reverse Recovery Time ––– 150 ––– ns TJ = 25°C ,IF = -16A, VDD = -25V
Qrr Reverse Recovery Charge ––– 860 ––– nC di/dt = 100A/µs
AUIRF6218S/L
3 2015-11-16
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
60µs PULSE WIDTH
Tj = 25°C
-4.5V
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
-4.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
2 4 6 8 10 12
-VGS, Gate-to-Source Voltage (V)
1.0
10
100
-ID, Drain-to-Source Current )
TJ = 25°C TJ = 175°C
VDS = 50V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -27A
VGS = -10V
AUIRF6218S/L
4 2015-11-16
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
110 100
-VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 1020304050607080
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-VGS, Gate-to-Source Voltage (V)
VDS= 120V
VDS= 75V
VDS= 30V
ID= -16A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
-VDS, Drain-to-Source Voltage (V)
1
10
100
1000
-ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
AUIRF6218S/L
5 2015-11-16
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
5
10
15
20
25
30
-ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.206 0.001867
0.140 0.013518
0.264 0.000285
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
AUIRF6218S/L
6 2015-11-16
0 20406080
-ID , Drain Current (A)
100
150
200
250
300
350
400
RDS (on) , Drain-to-Source On Resistance (m)
VGS = -10V
Fig 12. On-Resistance vs. Drain Current
45678910 11 12
-VGS, Gate -to -Source Voltage (V)
0
100
200
300
400
500
600
700
800
900
1000
RDS(on), Drain-to -Source On Resistance (m
)
ID = -27A
Fig 13. On-Resistance vs. Gate Voltage
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -4.6A
-6.3A
BOTTOM -16A
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
AUIRF6218S/L
7 2015-11-16
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D2Pak (TO-263AB) Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRF6218S
Lot Code
Part Number
IR Logo
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
AUIRF6218S/L
8 2015-11-16
TO-262 Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRF6218L
Lot Code
Part Number
IR Logo
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF6218S/L
9 2015-11-16
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRF6218S/L
10 2015-11-16
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D2-Pak
TO-262 Pak
ESD
Machine Model Class M4 (+/- 600V)†
AEC-Q101-002
Human Body Model Class H2 (+/- 3000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
MSL1
Revision History
Date Comments
11/16/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
