AUIRF6218S AUIRF6218L AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS -150V RDS(on) max. 150m ID -27A D D S G Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRF6218L TO-262 AUIRF6218S D2-Pak G D2Pak AUIRF6218S S D TO-262 AUIRF6218L G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRF6218L AUIRF6218S AUIRF6218STRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA Max. Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount, steady state) Units -27 -19 -110 250 1.6 20 210 -16 8.2 -55 to + 175 A W W/C V mJ A V/ns C 300 Typ. Max. Units --- --- 0.61 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-16 AUIRF6218S/L Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -150 --- --- -3.0 11 --- --- --- --- Typ. --- -0.17 120 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 150 mVGS = -10V, ID = -16A -5.0 V VDS = VGS, ID = -250A --- S VDS = -50V, ID = -16A -25 VDS = -120V, VGS = 0V A -250 VDS = -120V,VGS = 0V,TJ =150C -100 VGS = -20V nA 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance --- 71 110 --- 21 --- --- 32 --- --- 21 --- --- 70 --- --- 35 --- --- 30 --- --- 2210 --- --- 370 --- --- 89 --- Coss Output Capacitance --- 2220 --- Coss Output Capacitance --- 170 --- VGS = 0V,VDS = -120V, = 1.0MHz Coss eff. Effective Output Capacitance --- 340 --- VGS = 0V,VDS = 0V to -120V Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ID = -16A nC VDS = -120V VGS = -10V VDD = -75V ID = -16A ns RG= 3.9 VGS = -10V VGS = 0V VDS = -25V = 1.0MHz pF VGS = 0V,VDS = -1.0V, = 1.0MHz Min. Typ. Max. Units --- --- -27 --- --- -110 --- --- --- --- 150 860 -1.6 --- --- Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -16A,VGS = 0V ns TJ = 25C ,IF = -16A, VDD = -25V nC di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.6mH, RG = 25, IAS = -17A. ISD -17A, di/dt 520A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. R is measured at TJ of approximately 90C When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-11-16 AUIRF6218S/L 1000 BOTTOM TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 10 1000 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V TOP 100 1 -4.5V 0.1 60s PULSE WIDTH BOTTOM 10 0.1 60s PULSE WIDTH 1 Tj = 175C 10 0.1 100 0.1 -V DS, Drain-to-Source Voltage (V) 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 2.5 T J = 25C RDS(on) , Drain-to-Source On Resistance (Normalized) 100 -I D , Drain-to-Source Current ) -4.5V 1 Tj = 25C 0.01 T J = 175C 10 VDS = 50V 60s PULSE WIDTH 1.0 2 4 6 8 10 -VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V -4.5V ID = -27A VGS = -10V 2.0 1.5 1.0 0.5 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig. 4 Normalized On-Resistance vs. Temperature 2015-11-16 AUIRF6218S/L 100000 -V GS, Gate-to-Source Voltage (V) ID= -16A Coss = Cds + Cgd 10000 C, Capacitance(pF) 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Ciss 1000 Coss Crss 100 8.0 6.0 4.0 2.0 10 0.0 1 10 100 0 -VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.10 30 40 50 60 70 80 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) 100 T J = 25C VGS = 0V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 20 QG Total Gate Charge (nC) -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) T J = 175C 10.00 1.00 10 1000 1000.00 100.00 VDS = 120V VDS = 75V VDS = 30V 10.0 100sec 10 Tc = 25C Tj = 175C Single Pulse 1msec 10msec 1 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-11-16 AUIRF6218S/L 30 -I D, Drain Current (A) 25 20 15 Fig 10a. Switching Time Test Circuit 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 C 3 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) Ri (C/W) i (sec) 0.264 0.000285 0.206 0.001867 0.140 0.013518 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-11-16 R DS(on) , Drain-to -Source On Resistance (m ) AUIRF6218S/L R DS (on) , Drain-to-Source On Resistance (m ) 400 350 300 VGS = -10V 250 200 150 100 0 20 40 60 1000 900 800 700 600 ID = -27A 500 400 300 200 100 0 4 80 5 6 7 8 9 10 11 12 -VGS, Gate -to -Source Voltage (V) -ID , Drain Current (A) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage Fig 14a&b. Basic Gate Charge Test Circuit and Waveform EAS , Single Pulse Avalanche Energy (mJ) 900 ID -4.6A -6.3A BOTTOM -16A 800 TOP 700 600 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 15c. Maximum Avalanche Energy vs. Drain Current Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 2015-11-16 AUIRF6218S/L D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUIRF6218S YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 2015-11-16 AUIRF6218S/L TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUIRF6218L YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-11-16 AUIRF6218S/L D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-16 AUIRF6218S/L Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2-Pak MSL1 TO-262 Pak Class M4 (+/- 600V) AEC-Q101-002 Class H2 (+/- 3000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 11/16/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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