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BSR18A — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR18A Rev. 1.1.0 1
March 2014
BSR18A
PNP General-Purpose Amplifier
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Marking Package Packing Method
BSR18A T92 SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -40 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current - Continuous -200 mA
TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C
SOT-23
Mark: T92
C
B
E
Description
This device is designed as a general-purpose ampli-
fier for switching applications at collector currents of
10 μA to 100 mA. Sourced from process 66.
BSR18A — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR18A Rev. 1.1.0 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤0.01%.
Symbol Parameter Max. Unit
PDTotal Device Dissipation 350 mW
Derate Above TA = 25°C 2.8 mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
V(BR)CEO Collector-Emitter Breakdown Voltage IC = -10 μA, IB = 0 -40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = -1.0 mA, IE= 0 -40 V
V(BR)EBO Emitter-Base Breakdown V oltage IE = -10 μA, IC = 0 -5.0 V
ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 -50 nA
IEBO Emitter Cut-Off Current VEB = -3.0 V, IC = 0 -50 nA
hFE DC Current Gain(4)
IC = -0.1 mA, VCE = -1.0 V 60
IC = -1.0 mA, VCE = -1.0 V 80
IC = -10 mA, VCE = -1.0 V 100 300
IC = -50 mA, VCE = -1.0 V 60
IC = -100 mA, VCE = -1.0 V 30
VCE(sat) Collector-Emitter Saturation
Voltage(4) IC = -10 mA, IB = -1.0 mA -0.25 V
IC = -50 mA, IB = -5.0 mA -0.40
VBE(sat) Base-Emitter Saturation Voltage(4) IC = -10 mA, IB = -1.0 mA -0.65 -0.85 V
IC = -50 mA, IB = -5.0 mA -0.95
fTTran sition Frequency IC = -10 mA, VCE = -20 V,
f = 100 MHz 250 MHz
Ccb Collector-Base Capacitance VCB = -5.0 V, IE = 0,
f = 100 kHz 4.5 pF
Ceb Emitter-Base Cap a citance VEB = -0.5 V, IC = 0,
f = 100 kHz 10 pF
hie Input Impedance VCE = -10 V, IC = -1.0 mA,
f = 1.0 kHz 212kΩ
hie Small-Signal Current Gain VCE = -10 V, IC = -1.0 mA,
f = 1.0 kHz 100 400
hie Output Admittance VCE = -10 V, IC = -1.0 mA,
f = 1.0 kHz 360μS
tdDelay Time IC = -10 mA, IB1 = -1.0 mA,
VEB = -0.5 V 35 ns
trRise Time 35 ns
tsStorage Time IC = -10 mA,
IBon = IBoff = -1.0 mA 275 ns
tfFall Time 75 ns
BSR18A — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR18A Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs.
Collector Current Figure 2. Colle ctor-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Em itter Saturation Voltage
vs. Collector Current Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collect or Cut-Off Current vs.
Ambient Temperature Figure 6. Common-Base Open Circuit Input and
Output Capacitance vs. Reverse Bias Voltage
0. 1 0. 2 0.5 1 2 5 10 20 50 1 00
50
100
150
200
250
I - COLLECTOR CURRE NT (mA)
h - TYPICAL PULSED CU RR ENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 1 .0 V
CE
110100200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
25 °C
- 40 °C
125°C
β= 10
110100200
0
0. 2
0. 4
0. 6
0. 8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE( ON)
V = 1V
CE
25 °C
- 40 °C
125 °C
25 50 75 100 125
0.01
0.1
1
10
10 0
T - A MBI E NT TEMP ER AT UR E ( C)
I - C OL LE CT O R CU RR EN T (n A)
A
CBO
°
V = 25V
CB
0.1 1 10
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
BSR18A — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR18A Rev. 1.1.0 4
Typical Performance Characteristics (Continued)
Figure 7. Noise Figu re vs. Frequency Figure 8. Noise Figure vs. Source Resistanc e
Figure 9. Switching Times vs. Collector Current Figure 10. Turn-On an d Turn-Off Times vs.
Collector Current
Figure 10. Power Dissipation vs.
Ambient Temper ature Figure 11. Voltage Feedback Ratio
0.1 1 10 100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF - NOISE FIGURE (dB)
I = 100 μA, R = 200Ω
C
V = 5.0V
CE
S
I = 100 μA, R = 2.0 kΩ
CS
I = 1.0 mA, R = 200Ω
CS
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
kΩ
I = 100 μA
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
1 10 100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2
Ic
10
tf
td
1 10 100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
t
off
B1 B2
Ic
10
t
on
V = 0.5V
BE(OFF)
t I =
on
t
off
B1
Ic
10
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - VOLTAGE FEEDBACK RATIO (x10 )
C
re
_4
BSR18A — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR18A Rev. 1.1.0 5
Typical Performance Characteristics (Continued)
Figure 13. Input Impedance Figure 14. Output Admittan ce
Figure 15. Current Gain
0.1 1 10
0.1
1
10
I - COLLECTOR CURRENT (mA)
h - INPUT IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
Ω
0.1 1 10
10
100
1000
I - COLLECTOR CURRENT (mA)
h - OUTPUT ADMITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kHz
μ
0.1 1 10
10
20
50
100
200
500
1000
I - COLLECTOR CURRENT (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1.0 kHz
BSR18A — PNP General-Purpose Amplifier
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
BSR18A Rev. 1.1.0 6
Physical Dimensions
Figure 16. 3- LEAD, SOT2 3 , JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
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obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
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LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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