ky, SGS-THOMSON ST Sr HOMSON BDX85/85A/85B/85C BDX86/86A/86B/86C POWER DARLINGTONS DESCRIPTION The BDX 85, BDX 85A, BDX 85B and BDX 85C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun- ted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary PNP types are the BDX 86, BDX 86A, BDX 86B and BDX 86C respectively. INTERNAL SCHEMATIC DIAGRAMS TO-3 NPN Ro Typ. 150.0 PNP sm RA Typ. 150.2 ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter NPN | BDX85 |BDX85A | BDX85B |BDX85C | Unit PNP* | BDX86 |BDX86A/BDX86B | BDX85C Vopao Collector-base Voltage (l_ = 0) 45 60 80 100 Vv VcEo Collector-emitter Voltage (lg = 0) 45 60 80 100 v Veso Emitter-base Voltage (Ic = 0) 5 Vv lo Collector Current 10 A lom Collector Peak Current (repetitive) 15 A lp Base Current 0.41 A Prot Total Power Dissipation at Tcase < 25 C 100 Ww Tstg Storage Temperature 65 to 200 a6) Tj Junction Temperature 200 C * For PNP types voltage and current values are negative. December 1988 1/5 227THERMAL DATA | Rin j-case | Thermal Resistance Junction-case Max 1.75 ELECTRICAL CHARACTERISTICS (T.25. = 25 unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. [ Unit Icao Coilector Cutoff Current for BDX85/86 Vop =45 V 500 | pA (le =0) for BDX85A/86A Vcp =60V 500 LA for BDX85B/86B Vcp = 80 V 500 HA for BDX85C/86C =Vce = 100 V 500 HA Tease = 150 C for BDX85/86 Vop =45 V 5 mA for BDX85A/86A Vcp =60V 5 mA for BDX85B/86B Vcp =80 V 5 mA for BDX85C/86C =Vc_g = 100 V 5 mA IcEo Collector Cutoff Current for BDX85/86 Voe =22V 1 mA (Ig = 0) for BDX85A/86A Vce =30V 1 mA for BDX85B/86B Vcr =40 V 1 mA for BDX85C/86C 1 Vce =50 V 1 mA leBo Emitter Cutoff Current Veg <5 V 2 mA (Ie = 0) Vceoisus)*| Collector-emitter Sustaining lc = 100 mA_ for BDX85/86 45 Vv Voltage (lg = 0) for BDX85A/86A 60 Vv for BDX85B/86B 80 V for BDX85C/86C| 100 Vv Veceisaty | Collector-emitter Saturation Ic =4A Ig =16 MA 2 Vv Voltage lc =8A lp =40 mA 4 Vv Vaeisaty | Base-emitter Saturation le =BA Ie = 80 mA 4 Vv Voltage o* &* Vee* Base-emitter Voltage Ilo =4A Voce =3V 2.8 Vv Hee* DC Current Gain Ic =3A Voe=3V 1000 lo =4A VoeE=3V 750 18000 Ic =8A Voce =4V 200 Ve Parallel-diode Forward Ir =3A 18 Vv Voltage Ir =8A 2.5 Vv te Small Signal Current Gain Ic =3A Vee =3V 10 f= 1 MHz | * Pulsed : pulse duration = 300 ms, duty cycle = 1.5 %. For PNP type voltage and current vaiues are negative. 2s 228 ky SGS-THOMSON MICROELECTRONICSSafe Operating Areas (for BDX85, BDX85A, BDX86, BDX86A). Ie (a) MAX CONTINUOUS *FOR SINGLE NON REPETITIVE PULSE 1 : to" 1 wv 107 Veg tv? DC Current Gain (NPN types). G- 4300 nh 6 ' o retan DC Transconductance (NPN types). Ic (a os 15 Vgetv) SGS-THOMSON MICROELECTROMICS i Safe Operating Areas (for BDX85B, BDX85C, BDX86B, BDX86C). ic @) MAX CONTINUOUS. 10 *FOR SINGLE NON PULSE 1 0 w 10? Voge} DC Current Gain (PNP types). Me, * 7 soe 0" 1 vic la) DC Transconductance (PNP types). cle cal Os 1 IS Vee) 3/5 229Collector-emitter Saturation Voltage (NPN types). a 7 ee rere 7 4 ee % 1 10 Iota) Collector-emitter Saturation Voltage (NPN types). < Veetsat) te: 1 2 10 1 0 1g (mA) Base-emitter Saturation Voltage (NPN types). Betsat) ) * 4/ iy SGS-THOMSON Collector-emitter Saturation Voltage (PNP types). w w 1 0 ~te (A) Collector-emitter Saturation Voltage (PNP types). w) 19" 1 10 -Igimal Base-emitter Saturation Voltage (PNP types). Ww) MICROELECTROMICS 230Small Signal Current Gain (NPN types). ~32 48 Tt eee 7 ee 7 4 ee 10 10 10 1 1 (MHz) Collector-base Capacitance (NPN types). (pFy 0 2 see 2 sea 1 10 Yea) Saturated Switching Characteristics (NPN types). t ( . S77 SGS-THOMSON MICROELECTROMICS Small Signal Current Gain (PNP types). - mo * is 107 10! 1 Ode) Collector-base Capacitance (PNP types). G- 4838 1 10 . Neg Saturated Switching Characteristics (PNP types). rr) . see 1 10 Ic (Ab 5/5 231