ON Semiconductor NPN Silicon Power Transistor MJH16006A 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated SWITCHMODE applications. POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS Typical Applications: * * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits Features: * * * * * * * * Collector-Emitter Voltage -- VCEV = 1000 Vdc Fast Turn-Off Times 80 ns Inductive Fall Time -- 100C (Typ) 120 ns Inductive Crossover Time -- 100C (Typ) 800 ns Inductive Storage Time -- 100C (Typ) 100C Performance Specified for: Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents Extended FBSOA Rating Using Ultra-fast Rectifiers Extremely High RBSOA Capability CASE 340D-02 Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 6 1 Publication Order Number: MJH16006A/D MJH16006A IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIII MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 500 Vdc Collector-Emitter Voltage VCEV 1000 Vdc Emitter-Base Voltage VEB 6 Vdc Collector Current -- Continuous -- Peak(1) IC ICM 8 16 Adc Base Current -- Continuous -- Peak(1) IB IBM 6 12 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derate above TC = 25C PD 125 50 1 Watts TJ, Tstg -55 to 150 C Symbol Max Unit RJC 1 C/W TL 275 C Operating and Storage Junction Temperature Range W/C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. http://onsemi.com 2 MJH16006A IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIII 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Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) Collector Cutoff Current (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc, TC = 100C) ICEV mAdc Collector Cutoff Current (VCE = 1000 Vdc, RBE = 50 , TC = 100C) ICER -- 0.020 1.0 mAdc Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) IEBO -- 0.005 0.15 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased ON IS/b See Figure 14a or 14b RBSOA See Figure 15 CHARACTERISTICS(1) Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 0.6 Adc) (IC = 5 Adc, IB = 1 Adc) (IC = 5 Adc, IB = 1 Adc, TC = 100C) VCE(sat) Base-Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 5 Adc, IB = 1 Adc, TC = 100C) VBE(sat) Vdc -- -- -- 0.35 0.50 0.60 0.7 1 1.5 -- -- 1 1 1.5 1.5 hFE 5 8 -- -- Cob -- -- 350 pF Storage Time tsv -- 800 2000 ns Fall Time tfi -- 80 200 tc -- 120 300 tsv -- 1000 -- tfi -- 90 -- tc -- 150 -- td -- 25 100 tr -- 400 700 ts -- 1400 3000 tf -- 175 400 ts -- 475 -- tf -- 100 -- DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz) SWITCHING CHARACTERISTICS Inductive Load (Table 1) Crossover Time Storage Time Fall Time (IC = 5 Adc, Adc IB1 = 0.66 Adc, VBE(off) = 5 Vdc, VCE(pk) CE( k) = 400 Vdc) ((TJ = 100C)) ((TJ = 150C)) Crossover Time Resistive Load (Table 2) Delay Time Rise Time Storage Time Fall Time Storage Time (IC = 5 Adc, VCC = 250 Vdc, IB1 0 66 Adc, Adc B = 0.66 PW = 30 s, Duty Cycle 2%) Fall Time (IB2 = 1.3 Adc, RB1 = RB2 = 4 ) (VBE(off) = 5 Vdc) (1) Pulse Test: PW = 300 s, Duty Cycle 2%. http://onsemi.com 3 ns MJH16006A 100 hFE, DC CURRENT GAIN 50 TJ = 100C 30 20 25C 10 5 -55C 3 2 1 0.2 0.3 0.5 2 3 1 5 IC, COLLECTOR CURRENT (AMPS) 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 10 5 IC/IB = 10 TJ = 25C 3 2 1 5 0.5 0.3 0.2 0.1 VBE, BASE-EMITTER VOLTAGE (VOLTS) 8A 3A 5A 0.3 0.2 1A 0.1 0.1 0.2 0.3 0.5 1 2 3 1 2 3 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) 10 5 2 1.5 1 IC/IB = 10 TJ = 25C IC/IB = 10 TJ = 100C 0.5 0.3 0.2 10 0.2 0.3 IB, BASE CURRENT (AMPS) 0.5 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) Figure 8. Collector-Emitter Saturation Region Figure 9. Base-Emitter Saturation Region 10 k Cib TJ = 25C 1k Cob 100 10 0.1 5 Figure 7. Collector-Emitter Saturation Region 1 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.5 0.2 0.1 1 10 100 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Capacitance http://onsemi.com 4 850 10 MJH16006A TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS IC/IB1 = 5, TC = 75C, VCE(pk) = 400 V IC/IB1 = 10, TC = 75C, VCE(pk) = 400 V 3000 3000 VBE(off) = 0 V 2000 t sv, STORAGE TIME (ns) t sv, STORAGE TIME (ns) 2000 2V 1000 5V 700 VBE(off) = 0 V 1000 700 500 500 400 400 300 1 2 3 5 7 300 10 2V 5V 1 IC, COLLECTOR CURRENT (AMPS) Figure 11. Storage Time tfi, COLLECTOR CURRENT FALL TIME (ns) tfi, COLLECTOR CURRENT FALL TIME (ns) 0V 5V 200 VBE(off) = 0 V 100 5V 70 2V 1 2 3 5 7 10 7 10 7 10 300 200 2V VBE(off) = 0 V 100 70 5V 50 40 I *f = C IB1 IC, COLLECTOR CURRENT (AMPS) 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) Figure 13. Collector Current Fall Time Figure 14. Collector Current Fall Time 500 500 300 t c , CROSSOVER TIME (ns) t c , CROSSOVER TIME (ns) 5 400 2V 300 5V 2V 200 VBE(off) = 0 V 100 70 50 3 Figure 12. Storage Time 400 50 40 2 IC, COLLECTOR CURRENT (AMPS) 300 200 2V VBE(off) = 0 V 100 70 1 2 3 5 7 50 10 5V 1 2 3 5 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) http://onsemi.com 5 7 10 MJH16006A Table 1. Inductive Load Switching Drive Circuit VCEO(sus) L = 10 mH RB2 = VCC = 20 Volts +15 1 F 150 100 F 100 MTP8P10 MTP8P10 +10 A MPF930 RB2 MUR105 50 MJE210 1 F 150 Voff *Tektronix AM503 *P6302 or Equivalent T1 T1 +V I B2 , REVERSE BASE CURRENT (AMPS) tsv 90% IC(pk) trv tfi tti tc 10% VCE(pk) VCE IB 90% IB1 10% IC(pk) *IC T.U.T . *IB L MR918 VCC -V 8 VCE(pk) 90% VCE(pk) IC IB2 Vclamp 0V Note: Adjust Voff to obtain desired VBE(off) at Point A. IC(pk) IB1 IB A Lcoil (ICpk) VCC T1 adjusted to obtain IC(pk) Scope -- Tektronix 7403 or Equivalent VCE RBSOA L = 750 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 MTP12N10 500 F VCE(pk) Inductive Switching L = 750 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RB1 MPF930 IC(pk) IC 2% IC 6 4 0.5 A IC = 5 A TJ = 25C 2 0 t, TIME IB1 = 1 A 0 Figure 17. Inductive Switching Measurements 2 4 6 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 18. Peak Reverse Base Current http://onsemi.com 6 8 MJH16006A Table 2. Resistive Load Switching +15 td and tr H.P. 214 OR EQUIV. P.G. 150 1 F T.U.T . 50 100 F 100 RL V(off) adjusted to give specified off drive RB1 MPF930 +10 V A MPF930 VCC 0V Vin tr 15 ns VCC 250 V RL 50 IC 5A IB 0.66 A MTP12N10 MJE210 500 F 1 F 150 Voff A *IB *Tektronix AM503 *P6302 or Equivalent RB2 MUR105 50 11 V MTP8P10 MTP8P10 *IC *IB RB = 8.5 ts and tf RL 50 http://onsemi.com 7 T.U.T . *IC RL VCC MJH16006A GUARANTEED SAFE OPERATING AREA LIMITS EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE 5 3 2 TC = 25C 1 1ms 10s dc BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN 0.5 0.3 0.2 0.1 0.02 0.1 REGION II REGION II REGION II EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE 20 100ns IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 20 10 II EXPANDED FBSOA USING MUR8100 ULTRA-FAST RECTIFIER, SEE FIGURE 17 100ns 10 TC = 25C 5 3 2 1 1ms REGION II EXPANDED FBSOA USING MUR8100 ULTRA-FAST RECTIFIER, SEE FIGURE 17 0.5 0.3 0.2 0.1 dc II BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN 0.02 0.1 1 10 100 1000 2000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10s a. MJ16006A 1 10 100 1000 2000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) a. MJH16006A 100 20 POWER DERATING FACTOR (%) IC(pk) , PEAK COLLECTOR CURRENT (AMPS) Figure 19. Maximum Rated Forward Biased Safe Operating Area 16 12 8 IC/IB1 4 TJ 100C 4 VBE(off) = 5 V 80 SECOND BREAKDOWN DERATING 60 THERMAL DERATING 40 20 VBE(off) = 0 V 0 0 100 200 300 400 500 600 700 800 900 VCE(pk), COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 100 0 0 Figure 20. Maximum Reverse Biased Safe Operating Area 40 80 120 TC, CASE TEMPERATURE (C) Figure 21. Power Derating http://onsemi.com 8 160 200 MJH16006A VCE (1000 V MAX) +15 150 1 F 100 100 F 10 F MTP8P10 MTP8P10 RB1 MPF930 10 mH MUR8100 MUR1100 MUR105 +10 T.U.T . MPF930 RB2 MUR105 50 MTP12N10 MJE210 500 F 1 F 150 Note: Test Circuit for Ultra-fast FBSOA Note: RB2 = 0 and VOff = -5 Volts Voff r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 22. Switching Safe Operating Area 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 0.1 0.02 0.03 0.01 0.02 0.01 0.01 P(pk) RJC(t) = r(t) RJC RJC = 1.17 or 1C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.05 t1 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 23. Thermal Response http://onsemi.com 9 20 30 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 MJH16006A SAFE OPERATING AREA INFORMATION emitter voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated VCEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875). FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 14a and 14b is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 14a and 14b may be found at any case temperature by using the appropriate curve on Figure 16. TJ(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 2. TURN-ON -- Safe turn-on load line excursions are bounded by pulsed FBSOA curves. The 10 s curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra-fast recovery rectifiers, and are valid for turn-on crossover times less than 100 ns (see Application Note AN952). At voltages above 75% of VCEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn-on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics. 3. TURN-OFF -- A bipolar transistor's ability to withstand turn-off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are often more likely to fail at light loads due to heavy overdrive (see Application Note AN875). 4. OPERATION ABOVE VCEO(sus) -- When bipolars are operated above collector-emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn-on, as is a stiff negative bias needed for safe turn-off. Any hiccup in the base-drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952). SWITCHMODE III DESIGN CONSIDERATIONS 1. FBSOA -- Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector SWITCHMODE DESIGN CONSIDERATIONS (Cont.) 5. RBSOA -- device to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes. Reverse Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951). 7. BAKER CLAMPS -- Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR1100 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR4100 types are well-suited for higher drive requirements (see Article Reprint AR131). 6. DESIGN SAMPLES -- Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one http://onsemi.com 10 MJH16006A PACKAGE DIMENSIONS CASE 340D-02 ISSUE B C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF V STYLE 1: PIN 1. 2. 3. 4. G http://onsemi.com 11 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 MJH16006A SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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