MJH16006A - ON Semiconductor - Datasheet.Directory

NPN Silicon Power Transistor

1 kV SWITCHMODE Series

These transistors are designed for high–voltage, high–speed, power

switching in inductive circuits where fall time is critical. They are

particularly suited for line–operated SWITCHMODE applications.

Typical Applications:

•Switching Regulators

•Inverters

•Solenoids

•Relay Drivers

•Motor Controls

•Deflection Circuits

Features:

•Collector–Emitter Voltage — VCEV = 1000 Vdc

•Fast Turn–Off Times

•80 ns Inductive Fall Time — 100C (Typ)

•120 ns Inductive Crossover Time — 100C (Typ)

•800 ns Inductive Storage Time — 100C (Typ)

•100C Performance Specified for:

Reverse–Biased SOA with Inductive Load

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

•Extended FBSOA Rating Using Ultra–fast Rectifiers

•Extremely High RBSOA Capability

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 6 1Publication Order Number:

MJH16006A/D

POWER TRANSISTORS

8 AMPERES

500 VOLTS

150 WATTS

MJH16006A

CASE 340D–02

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎ

500

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎ

1000

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

6

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak(1)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IC

ICM

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

8

16

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak(1)

ÎÎÎÎÎ

IB

IBM

ÎÎÎÎÎÎÎ

6

12

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation@ TC = 25C

@ TC = 100C

Derate above TC = 25C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

PD

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

125

50

1

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

–55 to 150

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎ

1

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

ÎÎÎÎÎ

TL

ÎÎÎÎÎÎÎ

275

ÎÎÎÎ

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

500

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc)

(VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc, TC = 100C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

0.003

0.020

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.15

1.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 1000 Vdc, RBE = 50 Ω, TC = 100C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICER

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

0.020

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 6 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎ

0.005

ÎÎÎÎ

0.15

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎÎ

See Figure 14a or 14b

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎÎ

See Figure 15

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS(1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 0.6 Adc)

(IC = 5 Adc, IB = 1 Adc)

(IC = 5 Adc, IB = 1 Adc, TC = 100C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

0.35

0.50

0.60

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.7

1

1.5

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 5 Adc, IB = 1 Adc)

(IC = 5 Adc, IB = 1 Adc, TC = 100C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

1

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.5

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

5

ÎÎÎ

Î

ÎÎÎ

8

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 kHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

350

ÎÎÎ

Î

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load (Table 1)

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎ

800

ÎÎÎÎ

2000

ÎÎÎ

ns

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

(I = 5 Adc

ÎÎÎÎÎÎÎ

(TJ = 100C)

ÎÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎ

80

ÎÎÎÎ

200

ÎÎÎ

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

(IC = 5 Adc,

IB1 = 0.66 Adc,

ÎÎÎÎÎÎÎ

(J)

ÎÎÎÎÎ

tc

ÎÎÎÎ

—

ÎÎÎ

120

ÎÎÎÎ

300

ÎÎÎ

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

IB1

=

0

.

66

Adc

,

VBE(off) = 5 Vdc,

VCE( k) = 400 Vdc)

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎ

1000

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

VCE(pk) = 400 Vdc

)

ÎÎÎÎÎÎÎ

(TJ = 150C)

ÎÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎ

90

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

(J)

ÎÎÎÎÎ

tc

ÎÎÎÎ

—

ÎÎÎ

150

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 2)

ÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

td

ÎÎÎÎ

—

ÎÎÎ

25

ÎÎÎÎ

100

ÎÎÎ

ns

ÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎ

(

I

C

= 5 Adc,

ÎÎÎÎÎÎÎ

(IB2 = 1.3 Adc,

ÎÎÎÎÎ

tr

ÎÎÎÎ

—

ÎÎÎ

400

ÎÎÎÎ

700

ÎÎÎ

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

(IC

=

5

Adc

,

VCC = 250 Vdc,

IB=066Adc

ÎÎÎÎÎÎÎ

(IB2

1

.

3

Adc

,

RB1 = RB2 = 4 Ω)

ÎÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎ

1400

ÎÎÎÎ

3000

ÎÎÎ

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IB1 = 0.66 Adc,

PW = 30 µs,

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎ

175

ÎÎÎÎ

400

ÎÎÎ

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

PW

=

30

µs

,

Duty Cycle  2%)

ÎÎÎÎÎÎÎ

(V 5 Vdc)

ÎÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎ

475

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

(VBE(off) = 5 Vdc)

ÎÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

(1) Pulse Test: PW = 300 µs, Duty Cycle  2%.

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VBE, BASE-EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

0.2 1

2

0.5

0.3

1

IB, BASE CURRENT (AMPS)

0.5

0.3

0.2

100

0.2

Figure 6. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

10.3 0.5 1 5 10 20

30

10

5

Figure 7. Collector–Emitter Saturation Region

0.1

IC, COLLECTOR CURRENT (AMPS)

0.1 0.3 0.5

3

1

0.5

50

hFE, DC CURRENT GAIN

3

123 10

Figure 8. Collector–Emitter Saturation Region

50.50.1 0.2 0.3 1 10250.5

Figure 9. Base–Emitter Saturation Region

Figure 10. Capacitance

10

2

10 k

1

VR, REVERSE VOLTAGE (VOLTS)

10

1 k

100 850

C, CAPACITANCE (pF)

100

0.1

TJ = 25°C

Cib

3 A

TJ = 100°C

-55°C

25°C

20

23

IC/IB = 10

TJ = 100°C

IC/IB = 10

TJ = 25°C

1.5

1

210

0.1

2

5

0.3

0.2

0.2 5

3

5 A

8 A

1 A

IC/IB = 10

TJ = 25°C

5

0.3 3

Cob

TYPICAL STATIC CHARACTERISTICS

MJH16006A

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tc, CROSSOVER TIME (ns) tfi, COLLECTOR CURRENT FALL TIME (ns)

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Storage Time Figure 12. Storage Time

3000

2000

1000

700

500

300

, STORAGE TIME (ns)tsv

400

tfi, COLLECTOR CURRENT FALL TIME (ns)tc, CROSSOVER TIME (ns)

IC, COLLECTOR CURRENT (AMPS)

23 5710

3000

2000

1000

700

500

300

, STORAGE TIME (ns)tsv

1

400

IC, COLLECTOR CURRENT (AMPS)

23 5710

400

300

200

100

70

40

1

50

IC, COLLECTOR CURRENT (AMPS)

23 5710

500

300

200

100

50

1

70

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Collector Current Fall Time Figure 14. Collector Current Fall Time

2 V

VBE(off) = 0 V

IC/IB1 = 5, TC = 75°C, VCE(pk) = 400 V IC/IB1 = 10, TC = 75°C, VCE(pk) = 400 V

5 V

23 57101

2 V

5 V

2 V

5 V

0 V

2 V

5 V

23 5710

400

300

200

100

70

40

1

50

2 V

5 V

2 V 5 V

23 5710

500

300

200

100

50

1

70

*βf = IC

IB1

VBE(off) = 0 V

VBE(off) = 0 V VBE(off) = 0 V

2 V

5 V

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

MJH16006A

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6

+15

150 Ω100 Ω100 µF

MTP8P10

MPF930

MUR105

MJE210

150 Ω

500 µF

Voff

50 Ω

+10

MTP12N10

MTP8P10

RB1

RB2

A

1 µF

Drive Circuit

*Tektronix AM503

*P6302 or Equivalent Scope — Tektronix

7403 or Equivalent T1Lcoil (ICpk)

VCC

Note: Adjust Voff to obtain desired VBE(off) at Point A.

T1 adjusted to obtain IC(pk)

T1+V

-V

0 V

A

*IB

*ICL

T.U.T

.MR918

Vclamp VCC

IC(pk)

VCE(pk)

VCE

IB

IC

IB1

IB2

VCEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

Inductive Switching

L = 750 µH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

RBSOA

L = 750 µH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

Table 1. Inductive Load Switching

IB2, REVERSE BASE CURRENT (AMPS)

Figure 17. Inductive Switching Measurements Figure 18. Peak Reverse Base Current

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

0

8

6

4

2

IB1 = 1 A

0.5 A

024 68

IC = 5 A

TJ = 25°C

tfi

trv

t, TIME

IC

90% IB1

IC(pk) VCE(pk)

90% VCE(pk) 90% IC(pk)

10% VCE(pk) 10%

IC(pk) 2% IC

IB

tsv tti

tc

VCE

MJH16006A

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td and trts and tf

H.P. 214

OR

EQUIV.

P.G.

50

RB = 8.5 Ω

*IB

*IC

T.U.T

.RL

VCC

Vin

0 V

≈11 V

tr ≤ 15 ns

*Tektronix AM503

*P6302 or Equivalent

VCC 250 V

RL50 Ω

IC5 A

IB0.66 A

+15

150 Ω100 Ω100 µF

MTP8P10

MPF930

MUR105

MJE210

150 Ω

500 µF

Voff

50 Ω

+10 V

MTP12N10

MTP8P10

RB1

RB2

A

1 µF

T.U.T

.*IC

*IB

A

RL

VCC

V(off) adjusted

to give specified

off drive

RL50 Ω

Table 2. Resistive Load Switching

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ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ

IC, COLLECTOR CURRENT (AMPS)

20

0.1

Figure 19. Maximum Rated Forward Biased Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.02

1 10 2000

5

2

1

10

0.5

0.2

0.1

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

100 1000

a. MJ16006A

REGION II  EXPANDED FBSOA USING

REGION II  MUR8100 ULTRA-FAST

REGION II  RECTIFIER, SEE FIGURE 17

TC = 25°C

10µs1ms

dc

II

20

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.02

5

2

1

10

0.5

0.2

0.1

a. MJH16006A

REGION II 

EXPANDED FBSOA USING

MUR8100 ULTRA-FAST

RECTIFIER, SEE FIGURE 17

TC = 25°C10µs

1ms

dc

20

VCE(pk), COLLECTOR-EMITTER VOLTAGE (VOLTS)

0100

0

16

12

8

4

100 200 300 400 900

Figure 20. Maximum Reverse Biased

Safe Operating Area

IC/IB1 ≥ 4

TJ ≤ 100°C

POWER DERATING FACTOR (%)

100

0

TC, CASE TEMPERATURE (°C)

040 200

80

60

40

20

80 120 160

Figure 21. Power Derating

500 600 700 800

VBE(off) = 0 V

SECOND BREAKDOWN DERATING

THERMAL DERATING

3

0.3

3

0.3

0.1 1 10 2000100 1000

IC, COLLECTOR CURRENT (AMPS)

IC(pk), PEAK COLLECTOR CURRENT (AMPS)

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

II

0

VBE(off) = 5 V

100ns 100ns

GUARANTEED SAFE OPERATING AREA LIMITS

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Figure 22. Switching Safe Operating Area

+15

150 Ω100 µF

MTP8P10

MPF930

MUR105

MJE210

150 Ω

500 µF

Voff

50 Ω

+10

MTP12N10

RB1

RB2

1 µF

1 µF100 Ω

MTP8P10

MUR105

MUR1100

T.U.T

.

MUR8100

VCE (1000 V MAX)

10 µF

10 mH

Note: Test Circuit for Ultra–fast FBSOA

Note: RB2 = 0 and VOff = –5 Volts

t, TIME (ms)

1

0.01

0.7

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

RθJC(t) = r(t) RθJC

RθJC = 1.17 or 1°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.02

SINGLE PULSE

0.1

0.1 0.50.2

RESISTANCE (NORMALIZED)

1000

Figure 23. Thermal Response

0.5

0.3

0.07

0.03

0.03 0.3 3 30 3000.02

0.05

0.01

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SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 14a and 14b is based on TC = 25C;

TJ(pk) is variable depending on power level. Second

breakdown pulse limits are valid for duty cycles to 10% but

must be derated when TC ≥ 25C. Second breakdown

limitations do not derate the same as thermal limitations.

Allowable current at the voltages shown on Figures 14a and

14b may be found at any case temperature by using the

appropriate curve on Figure 16.

TJ(pk) may be calculated from the data in Figure 18. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases,

with the base–to–emitter junction reverse biased. Under

these conditions the collector voltage must be held to a safe

level at or below a specific value of collector current. This

can be accomplished by several means such as active

clamping, RC snubbing, load line shaping, etc. The safe

level for these devices is specified as Reverse Biased Safe

Operating Area and represents the voltage current condition

allowable during reverse biased turnoff. This rating is

verified under clamped conditions so that the device is never

subjected to an avalanche mode. Figure 15 gives the

RBSOA characteristics.

SWITCHMODE III DESIGN CONSIDERATIONS

1. FBSOA —

Allowable dc power dissipation in bipolar power

transistors decreases dramatically with increasing collector

emitter voltage. A transistor which safely dissipates 100

watts at 1 0 volts will typically dissipate less than 10 watts at

its rated VCEO(sus). From a power handling point of view,

current and voltage are not interchangeable (see Application

Note AN875).

2. TURN–ON —

Safe turn–on load line excursions are bounded by pulsed

FBSOA curves. The 10 µs curve applies for resistive loads,

most capacitive loads, and inductive loads that are clamped

by standard or fast recovery rectifiers. Similarly, the 100 ns

curve applies to inductive loads which are clamped by

ultra–fast recovery rectifiers, and are valid for turn–on

crossover times less than 100 ns (see Application Note

AN952).

At voltages above 75% of VCEO(sus), it is essential to

provide the transistor with an adequate amount of base drive

VERY RAPIDLY at turn–on. More specifically, safe

operation according to the curves is dependent upon base

current rise time being less than collector current rise time.

As a general rule, a base drive compliance voltage in excess

of 10 volts is required to meet this condition (see Application

Note AN875).

3. TURN–OFF —

A bipolar transistor ’s ability to withstand turn–off stress

is dependent upon its forward base drive. Gross overdrive

violates the RBSOA curve and risks transistor failure. For

this reason, circuits which use fixed base drive are often

more likely to fail at light loads due to heavy overdrive (see

Application Note AN875).

4. OPERATION ABOVE VCEO(sus) —

When bipolars are operated above collector–emitter

breakdown, base drive is crucial. A rapid application of

adequate forward base current is needed for safe turn–on, as

is a stiff negative bias needed for safe turn–off. Any hiccup

in the base–drive circuitry that even momentarily violates

either of these conditions will likely cause the transistor to

fail. Therefore, it is important to design the driver so that its

output is negative in the absence of anything but a clean crisp

input signal (see Application Note AN952).

SWITCHMODE DESIGN CONSIDERATIONS (Cont.)

5. RBSOA —

Reverse Biased Safe Operating Area has a first order

dependency on circuit configuration and drive parameters.

The RBSOA curves in this data sheet are valid only for the

conditions specified. For a comparison of RBSOA results in

several types of circuits (see Application Note AN951).

6. DESIGN SAMPLES —

Transistor parameters tend to vary much more from wafer

lot to wafer lot, over long periods of time, than from one

device to the next in the same wafer lot. For design

evaluation it is advisable to use transistors from several

different date codes.

7. BAKER CLAMPS —

Many unanticipated pitfalls can be avoided by using

Baker Clamps. MUR105 and MUR1100 diodes are

recommended for base drives less than 1 amp. Similarly,

MUR405 and MUR4100 types are well–suited for higher

drive requirements (see Article Reprint AR131).

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PACKAGE DIMENSIONS

CASE 340D–02

ISSUE B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

A

D

VG

K

SL

U

BQEC

J

H

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A--- 20.35 --- 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L--- 16.20 --- 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

123

4

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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