2N3771 & 2N3772
Silicon NPN Transistor
High Power Audio Amplifier
TO−3 Type Package
Description:
The 2N3771 and 2N3772 are silicon epitaxial−base NPN transistors in a TO−3 type case intended
for linear amplifiers and inductive switching applications
Absolute Maximum Ratings:
Collector−Emitter Voltage (IE = 0), VCEO
1N3771 40V.....................................................................
1N3772 60V.....................................................................
Collector−Emitter Voltage (VBE = −1.5V), VCEV
1N3771 50V.....................................................................
1N3772 80V.....................................................................
Collector−Base Voltage (IB = 0), VCBO
1N3771 50V.....................................................................
1N3772 100V....................................................................
Emitter−Base Voltage (IC = 0), VEBO
1N3771 5V......................................................................
1N3772 7V......................................................................
Collector Current, IC
1N3771 30A.....................................................................
1N3772 20A.....................................................................
Peak Collector Current, ICM 30A..........................................................
Base Current, IB
1N3771 7.5A....................................................................
1N3772 5A......................................................................
Peak Base Current, IBM 15A.............................................................
Total Device Dissipation (TC +25C), PD150W...........................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.17C/W....................................
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current
1N3771 ICEV VBE = −1.5V VCB = 50V − − 2 mA
1N3772 VCB = 100V − − 5 mA
All Devices VCB = 30V, TJ = +150C− − 10 mA
Collector Cutoff Current
1N3771 ICEO IB = 0 VCB = 30V − − 10 mA
1N3772 VCB = 50V − − 10 mA
Collector Cutoff Current
1N3771 ICBO IE = 0 VCB = 50V − − 4 mA
1N3772 VCB = 100V − − 5 mA
Emitter Cutoff Current
1N3771 IEBO IC = 0 VCB = 5V − − 5 mA
1N3772 VCB = 7V − − 5 mA
Collector−Emitter Sustaining Voltage
1N3771 VCEO(sus) IC = 200mA, IB = 0, Note 1 40 − − V
1N3772 60 − − V
Collector−Emitter Sustaining Voltage
1N3771 VCEV(sus) VBE = −1.5V, IC = 200mA,
RBE = 100, Note 1
50 − − V
1N3772 80 − − V
Collector−Emitter Sustaining Voltage
1N3771 VCER(sus) IC = 200mA, RBE = 100, Note 1 45 − − V
1N3772 70 − − V
Collector−Emitter Saturation Voltage
1N3771 VCE(sat) Note 1 IC = 15A, IB = 1.5A − − 2 V
IC = 30A, IB = 6A − − 4 V
1N3772 IC = 10A, IB = 1A − − 1.4 V
IC = 20A, IB = 4A − − 4 V
Base−Emitter Voltage
1N3771 VBE VCE = 4V,
Note 1
IC = 15A − − 2.7 V
1N3772 IC = 10A − − 2.7 V
DC Current Gain
1N3771 hFE VCE = 4V,
Note 1
IC = 15A 15 −60
IC = 30A 5− −
1N3772 IC = 10A 15 −60
IC = 20A 5− −
Small Signal Current Gain hFE IC = 1A, VCE = 4V, f = 1kHz 40 − −
Transition Frequency fTIC = 1A, VCE = 4V, f = 50kHz 0.2 − − MHz
Second Breakdown Collector Current Is/b VCE = 25V, t = 1s (non−repetitive) 6− − A
Note 1. Pulse Test: Pulse Width = 300s. Duty Cycle 2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
