D W DAWIN Electronics Preliminary TM DM2G200SH12A Mar. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 High Speed Switching BVCES = 1200V Low Conduction Loss : VCE(sat) = 1.8 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10uS at TC=100 Reduced EMI and RFI Isolation Type Package 4 Package : 7DM-3 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 1200 V VGES Gate-Emitter Voltage - 20 V IC Collector Current Tc = 25 275 A Tc = 80 200 A - 400 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current Tc = 100 200 A IFM Diode Maximum Forward Current - 400 A TSC Short Circuit Withstand Time Tc = 100 10 uS PD Maximum Power Dissipation Tc = 25 1500 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 9 seconds - 260 4.0 N.m 3.5 N.m Mounting screw Torque :M6 Power terminals screw Torque :M6 - Copyright@Dawin Electronics Corp. All right reserved D W DAWIN Electronics Preliminary TM DM2G200SH12A Mar. 2008 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC = 1.0mA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Values Unit Typ. Max. 1200 - - V VGE = 0V , IC = 1.0mA - 0.6 - V/ G - E threshold voltage IC =5.0mA , VCE = VGE 5 - 8 V ICES Collector cutoff Current VCE = 1200V , VGE = 0V - - 2.0 mA IGES G - E leakage Current VGE =20V - - 300 nA VCE(sat) Collector to Emitter IC=200A, VGE=15V @TC= 25 - 1.8 2.75 V saturation voltage IC=200A, VGE=15V @TC=100 - 2.0 - V Cies Input capacitance VGE = 0V , f = 1 - 15 - nF Coes Output capacitance VCE = 25V - 1.1 - nF Cres Reverse transfer capacitance - 0.7 - nF td(on) Turn on delay time VCC = 600V , IC = 200A - 180 - nS Turn on rise time VGE = 15V - 85 - nS Turn off delay time RG = 5.1 - 520 - nS Turn off fall time Inductive Load=60nH - 100 - nS tr td(off) tf Min. Eon Turn on Switching Loss - 13 - mJ Eoff Turn off Switching Loss - 9 - mJ Ets Total Switching Loss - 22 - mJ Tsc Short Circuit Withstand Time 10 - - uS VCC = 600V, VGE = 15V RG =5.1 @TC = 100 Qg Total Gate Charge VCC = 600V - 1400 - nC Qge Gate-Emitter Charge VGE = 15V - 250 - nC Qgc Gate-Collector Charge IC = 200A - 800 - nC Copyright@Dawin Electronics Corp. All right reserved D W DAWIN Electronics Preliminary TM DM2G200SH12A Mar. 2008 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=200A Min. Typ. Max. Tc =25 - 2.3 3.0 Tc =100 - 2.1 - Diode Reverse IF=200A, VR=600V Tc =25 - 200 - Recovery Time di/dt= -200A/uS Tc =100 - 220 - Diode Peak Reverse Tc =25 - 65 - Recovery Current Tc =100 - 75 - Diode Reverse Tc =25 - 3000 - Recovery Charge Tc =100 - 12500 - Unit V nS A nC Thermal Characteristics and Weight Symbol Parameter Conditions Values Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.089 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.22 /W RCS Case-to-Sink ( Conductive grease applied) 0.03 - - /W Weight Weight of Module - - 360 g Copyright@Dawin Electronics Corp. All right reserved D W DAWIN Electronics Preliminary TM DM2G200SH12A Mar. 2008 Performance Curves 400 Common Emitter TC=25 20V 15V Common Emitter TC=125 12V Collector Current, IC [A] Collector Current, IC [A] 400 300 10V 200 100 20V 15V 12V 300 10V 200 100 VGE=8V VGE = 8V 0 0 0 1 2 3 0 4 3 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics 4 300 250 Load Current [A] TC=25 200 TC=125 100 200 150 100 Duty cycle = 50% TC=125 Power Dissipation = 275W 50 0 0 0 1 2 0.1 3 1 Collector - Emitter Voltage, VCE [V] 20 Collector - Emitter Voltage, VCE [V] 15 10 200A 5 300A IC=150A 0 5 10 15 100 Fig 4. Load Current vs. Frequency 20 Common Emitter TC=25 0 10 Frequency [KHz] Fig 3. Typical Saturation Voltage characteristics Collector - Emitter Voltage, VCE [V] 2 Collector - Emitter Voltage, VCE [V] 300 Collector Current, IC [A] 1 20 Common Emitter TC=125 15 10 200A 5 300A IC=150A 0 0 5 10 15 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. VGE Fig 6. Typical Saturation Voltage vs. VGE Copyright@Dawin Electronics Corp. All right reserved 20 W DAWIN Electronics TM 100 Capacitance [pF] 20 Common Emitter VGE=0V, f=1MHZ TC=25 Cies 10 Coes Cres 1 0.1 0 DM2G200SH12A Mar. 2008 Gate - Emitter Voltage, VGE [V] D Preliminary 20 40 60 80 Common Emitter VCE=600V, IC=200A TC=25 15 VCC=600V VCC=800V 10 5 0 100 0 0.2 0.6 0.8 1 1.2 1.4 Gate Charge, Qg [nC] Collector - Emitter Voltage, VCE [V] Fig 8. Gate Charge characteristics Fig 7. Capacitance characteristics 2000 400 TJ = 150 VGE 15V 350 TJ 150 PD = f(Tc) 1500 300 250 200 PD [ W ] Ic [ A ] 0.4 150 1000 500 100 50 0 0 0 20 40 60 80 100 120 140 0 160 20 40 100 120 140 160 Fig 10. Power Dissipation vs. Case Temperature 400 Forward Current, IF [A] 1 Thermal Response Zthjc [ /W] 80 Tc [ ] Tc [ ] Fig 9. rated Current vs. Case Temperature 60 0.1 0.01 0.001 1.E-05 IGBT : DIODE : TC=25 2.E-01 4.E-01 6.E-01 8.E-01 Rectangular Pulse Duration Time [sec] Fig 11. Transient Thermal Impedance TC=125 TC=25 300 200 100 0 1.E+00 0 1 2 3 Forward Drop Voltage, VF [V] Fig 12. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 4 D W DAWIN Electronics Preliminary TM DM2G200SH12A Mar. 2008 Package Out Line Information 7DM-3 Dimensions in mm 1080.3 930.3 250.5 6.4 0.2 M6 DP9 250.5 480.3 5 17.50.3 4 3 2 90.5 5.50.5 220.2 30.2 620.5 140.2 LABEL PLATE 2.80.05 23.20.5 6.10.5 140.2 MAX 31 140.2 21.10.5 1.20.05 30.2 Bolt Depth 10.60.2 620.5 6 60.3 150.3 60.3 7 1 105.80.5 Copyright@Dawin Electronics Corp. All right reserved 59.80.5