Copyright@Dawin Electronics Corp. All right reserved
DM2G200SH12A
Mar. 2008
Preliminary
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
High Power SPT+& Lugged Type IGBT Module
Description
DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses
and switching noise in high frequency power conditioning electrical systems.
These IGBT modules are ideally suited for power inverters, motors drives
and other applications where switching losses are significant portion of the
total losses.
Features
☞High Speed Switching
☞BVCES = 1200V
☞Low Conduction Loss : VCE(sat) = 1.8 V (typ.)
☞Fast & Soft Anti-Parallel FWD
☞Short circuit rated : Min. 10uS at TC=100℃
☞Reduced EMI and RFI
☞Isolation Type Package
Applications
Motor Drives, High Power Inverters, Welding Machine, Induction Heating,
UPS , CVCF, Robotics , Servo Controls, High Speed SMPS
Absolute Maximum Ratings@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
Equivalent Circuit and Package
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Co llec tor C u rrent
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 9 seconds
Mounting screw Torque :M6
Power terminals screw Torque :M6
1200
±20
275
200
400
200
400
10
1500
-40 ~ 150
-40 ~ 125
2500
260
4.0
3.5
V
V
A
A
A
A
A
uS
W
℃
℃
V
℃
N.m
N.m
-
-
Tc = 25℃
Tc = 80℃
-
Tc = 100℃
-
Tc = 100℃
Tc = 25℃
-
-
AC 1 minute
-
-
-
High Power SPT+& Lugged Type IGBT Module
Equivalent Circuit
Equivalent Circuit and Package
Package : 7DM-3 Series
Please see the package out line information
6
7
5
4
①②③
Copyright@Dawin Electronics Corp. All right reserved
DM2G200SH12A
Mar. 2008
Preliminary
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Electrical Characteristics of IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E Breakdown Voltage
Temperature Coef f. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
1200
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
-
-
-
1.8
2.0
15
1.1
0.7
180
85
520
100
13
9
22
-
1400
250
800
-
-
8
2.0
±300
2.75
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V/℃
V
mA
nA
V
V
nF
nF
nF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC= 1.0mA
VGE = 0V , IC= 1.0mA
IC=5.0mA , VCE = VGE
VCE = 1200V , VGE = 0V
VGE =±20V
IC=200A, VGE=15V @TC= 25℃
IC=200A, VGE=15V @TC=100℃
VGE = 0V , f = 1㎒
VCE = 25V
VCC = 600V , IC= 200A
VGE = ±15V
RG= 5.1Ω
Inductive Load=60nH
VCC = 600V, VGE = ±15V
RG=5.1Ω@TC= 100℃
VCC = 600V
VGE =±15V
IC= 200A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Copyright@Dawin Electronics Corp. All right reserved
DM2G200SH12A
Mar. 2008
Preliminary
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Electrical Characteristics of FRD @ TC=25℃(unless otherwise specified)
Symbol Parameter Values UnitConditions Min. Typ. Max.
IF=200A
IF=200A, VR=600V
di/dt= -200A/uS
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Tc =25℃
Tc =100℃
Diode Forward Voltage
Diode Reverse
Recovery Time
Diode Peak Reverse
Recovery Current
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
2.3
2.1
200
220
65
75
3000
12500
3.0
-
-
-
-
-
-
-
V
nS
A
nC
Thermal Characteristics and Weight
Symbol Parameter Values UnitConditions Min. Typ. Max.
Junction-to-Case(IGBT Part, Per 1/2 Module)
Junction-to-Case(DIODE Part, Per 1/2 Module)
Case-to-Sink ( Conductive grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.089
0.22
-
360
-
-
0.03
-
RθJC
RθJC
RθCS
Weight
Copyright@Dawin Electronics Corp. All right reserved
DM2G200SH12A
Mar. 2008
Preliminary
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
0
100
200
300
400
01234
0
100
200
300
0123
0
100
200
300
400
01234
0
5
10
15
20
0 5 10 15 20
0
5
10
15
20
0 5 10 15 20
0
50
100
150
200
250
300
0.1 1 10 100
Performance Curves
Common Emitter
TC=25℃Common Emitter
TC=125℃
TC=25℃
Duty cycle = 50%
TC=125℃
Power Dissipation = 275W
Common Emitter
TC=25℃Common Emitter
TC=125℃
Collector – Emitter Voltage, VCE [V]
Collector Current, IC[A]
Collector – Emitter Voltage, VCE [V]
Collector Current, IC[A]
Collector – Emitter Voltage, VCE [V]
Collector Current, IC[A]
Gate – Emitter Voltage, VGE [V]
Collector – Emitter Voltage, VCE [V]
Collector – Emitter Voltage, VCE [V]
Gate – Emitter Voltage, VGE [V]
Frequency [KHz]
Load Current [A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
VGE = 8V
10V
12V15V
20V 20V 15V
10V
12V
VGE=8V
TC=125℃
300A
200A
IC=150A
300A
IC=150A
200A
Copyright@Dawin Electronics Corp. All right reserved
DM2G200SH12A
Mar. 2008
Preliminary
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
0
500
1000
1500
2000
0 20406080100120140160
0.001
0.01
0.1
1
1.E-05 2.E-01 4.E-01 6.E-01 8.E-01 1.E+00
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100 120 140 160
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0.1
1
10
100
0 20406080100
Collector – Emitter Voltage, VCE [V]
Capacitance [ pF ]
Common Emitter
VGE=0V, f=1MHZ
TC=25℃
Cies
Coes
Cres
Gate Charge, Qg [nC]
Gate – Emitter Voltage, VGE [V]
Common Emitter
VCE=600V, IC=200A
TC=25℃
Rectangular Pulse Duration Time [sec]
Thermal Response Zthjc [ /W]
℃
Forward Drop Voltage, VF[V]
Forward Current, IF[A]
Fig 7. Capacitance chara cteristics Fig 8. Gate Charge characteristics
Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics
VCC=600V VCC=800V
Fig 9. rated Current vs. Case Temperature Fig 10. Power Dissipation vs. Case Temperature
Tc [ ℃]
Ic [ A ]
TJ= 150℃
VGE ≥15V
Tc [ ℃]
PD[ W ]
TJ≤150℃
PD= f(Tc)
IGBT :
DIODE :
TC=25℃
0
100
200
300
400
01234
TC=125℃
TC=25℃
Copyright@Dawin Electronics Corp. All right reserved
DM2G200SH12A
Mar. 2008
Preliminary
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Package Out Line Information
7DM-3
Dimensions in mm
1
23
4567
108±0.3
25±0.5 25±0.5
48±0.3
62±0.5
17.5±0.3
14±0.2 14±0.2 14±0.2
3±0.2 22±0.2 3±0.2
105.8±0.5
21.1±0.5
1.2±0.05
23.2±0.5
62±0.5
59.8±0.5
2.8±0.05
MAX 31
6.4 ± 0.2
M6 DP9
9±0.5
6.1±0.5
LABEL PLATE
93±0.3
6±0.3 15±0.3 6±0.3
5.5±0.5
10.6±0.2
Bolt Depth
