ADVANCED APT8030LVR POWER TECHNOLOGY 800V 27A 0.3002 POWER MOS vV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching * 100% Avalanche Tested Lower Leakage * Popular TO-264 Package G i) MAXIMUM RATINGS All Ratings: Tg = 25C unless otherwise specified. Symbol | Parameter APT8030LVR UNIT Voss Drain-Source Voltage 800 Volts Ib Continuous Drain Current @ Tg = 25C 27 @) Amps lom Pulsed Drain Current 108 Vas Gate-Source Voltage Continuous +30 Vol olts Vesm Gate-Source Voltage Transient +40 p Total Power Dissipation @ Tc, = 25C 520 Watts p Linear Derating Factor 4.16 wre TT stg | Operating and Storage Junction Temperature Range -55 to 150 C Ty, Lead Temperature: 0.063" from Case for 10 Sec. 300 laR Avalanche Current (Repetitive and Non-Repetitive) 27 Amps Ear Repetitive Avalanche Energy O 50 mJ Eas Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT BVgg | Drain-Source Breakdown Voltage (V,. = OV, |, = 250pA) 800 Volts lb(on) On State Drain Current @ (Vos > | bon) X Rogion) Max, Vas = 10V) 27 Amps Roscon) Drain-Source On-State Resistance @ (Vos = 10V, 0.5 loicont) 0.300 | Ohms Zero Gate Voltage Drain Current (Vos = Voge? Vos = 0V) 95 HA PSS | Zero Gate Voltage Drain Current (Vi. = 0.8 Vice: Vag = OV, Ty = 125C) 250 lass Gate-Source Leakage Current (Vag = +80V, Vos = 0V) +100 nA Vesith) Gate Threshold Voltage (Vig = Vas? Ly = 2.5mA) 2 4 Volts Ge CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 17 dead USA ( APT Website - http://www.advancedpower.com } 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557 92 15 15 FAX: (33) 5 56 47 97 61 050-5565 Rev B050-5565 Rev B DYNAMIC CHARACTERISTICS APT8030LVR Symbol | Characteristic Test Conditions MIN TYP MAX UNIT Co. Input Capacitance Vg = OV 6600 | 7900 C..5 | Output Capacitance Vog = 25V 645 900 pF C., | Reverse Transfer Capacitance f= 1 MHz 320 480 Q, Total Gate Charge @ Vas = 10V 340 510 Qgs Gate-Source Charge Vp = 9-5 Voss 31 47 nc Qo Gate-Drain ("Miller") Charge Ib = lbicont] @ 25C 170 250 ton) | Turn-on Delay Time Veg = 15V 16 32 t Rise Time Vp = 9-5 Vigs 14 28 ; I= @ 25C ns tyoty | Turn-off Delay Time b= 'D[cont] 59 90 t, Fall Time Rg = 0.62 8 16 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT Is Continuous Source Current (Body Diode) 27 A mps lon Pulsed Source Current (Body Diode) 108 P Vsp Diode Forward Voltage @ (Vag = OV, Is = lotcont) 1.3 Volts t. Reverse Recovery Time (I, = lorconty dl/dt = 100A/us) 850 ns tr Reverse Recovery Charge (I, = lorcontp dl./dt = 100A/ps) 92 uC THERMAL CHARACTERISTICS Symbol | Characteristic MIN TYP MAX UNIT Rojc | Junction to Case 0.24 CAN Roja | Junction to Ambient 40 @ Repetitive Rating: Pulse width limited by maximum junction temperature. @ Pulse Test: Pulse width < 380 pS, Duty Cycle < 2% @ See MIL-STD-750 Method 3471 @ Starting T= +25C, L = 6.86mH, Rg = 259, Peak |, = 27A APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 0.1 0.05 0.01 0.005 SINGLE PULSE Zoe THERMAL IMPEDANCE (C/W) 0.001 105 104 103 betp | Duty Factor D = itp Peak Ty =Ppm x Zocot+Teo 102 1071 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATIONIp DRAIN CURRENT (AMPERES) Ip DRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) APT8030LVR Vag=5.5V, 6V, 7V, 10V & 15V 50 40 5V 30 20 4v 0 0 100 200 300 400 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 Ty =-55C / Ty = 425C] Ty = 125C 80 L L Vpg> Ip (ON) x Rpg (ON)MAX. 60 }} = 250uSEC. PULSE TEST / @ <0.5 % DUTY CYCLE , / Ty =+125C 20 poe ! | TTI Ty = +25C eT, = -55C 5 Ane 0 2 4 6 8 Vag: GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 30 25 20 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) 25 [p= 05 Ip [Cont] Vag = 10V 2.0 1.5 1.0 0.5 0.0 0 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 50 Vgg=15V Vgg=10V Gg=5-5V, BV &7V Nm wo oO Oo Ip DRAIN CURRENT (AMPERES) 3 4v 0 0 4 8 12 16 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.4 Veg = 10V @ 05 |, [Cont] wo to a ua o Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE 2 ~o 10 20 30 40 50 60 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, R,,(ON) vs DRAIN CURRENT a ua on 1.05 1.00 0.95 BV gg, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.90 -0 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 a ua 1.0 0.9 0.8 0.7 Veg(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.6 0 -25 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5565 Rev B050-5565 Rev B 200 100 10nS a 50 Factor 100uS im o < = ims ha 10 G 5 or cc 10mS 5 Oo Zz 100mS To =+25C DC a 5 HT) =+150C a A 1 10 50 10 800 Vos: DRAIN: TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 'b = 'b [Cont] Vpg=100V Vpg=250V Vpg=400V Veg GATE-TO-SOURCE VOLTAGE (VOLTS) 0 0 100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE APT8030LVR 30,000 10,000 5,000 1,000 C, CAPACITANCE (pF) 500 100 oF A 1 10 50 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 Ty =+150C Ty =+25C 50 10 Iba REVERSE DRAIN CURRENT (AMPERES) { 0 0.4 0.8 1.2 1.6 2.0 Vgp: SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-264 Package Outline 4.60 (.181) <> 5121 (205) < 19.51 (768) __ _| 1.80 (.071) 20.50 (.807) | 2.01 (.079) k | 3.10 (.122) 3.48 (.137) 4 _ y cr e e (| 5.79 (.228) 7 \ iL 8.20 (.244 | 7 ~ 2 ~ + @ 25.48 (1.003) a 26.49 (1.043) A _ 2.29 (.090) 2.29 (.090) | P 2.69 (.106) 2.69 (.106) 19.81 (.780) 2139 (842) | Gate | Drain Source 0.48 (.019) 0.76 -c20)_.| LL < 084 (033) 1.30 (.051) 2.59 (.102) 2.79 (.110) el 3/00 (118) 3.18 (125) 5.45 (.215) BSC 2-Ples. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058