© 2011 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions. 20110113d
VVZ 12
IdAVM = 20 A
VRRM = 1200/1600 V
VRSM VRRM Type
VDSM VDRM
VV
1300 1200 VVZ 12-12io1
1700 1600 VVZ 12-16io1
Symbol Conditions Maximum Ratings
IdAV TK = 100°C; module 15 A
IdAVM module 20 A
IFRMS, ITRMS per leg 12 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 110 A
VR = 0 t = 8.3 ms (60 Hz), sine 115 A
TVJ = TVJM t = 10 ms (50 Hz), sine 100 A
VR = 0 t = 8.3 ms (60 Hz), sine 105 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 60 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 55 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 50 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 45 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 50 A 150 A/µs
f =400 Hz, tP =200 µs
VD = 2/3VDRM
IG = 0.3 A, non repetitive, IT = 1/3IdAV 500 A/µs
diG /dt = 0.3 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp =30µs ≤10 W
IT = ITAVM tp = 500 µs ≤5W
tp =10ms ≤1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL < 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight typ. 28 g
Features
zPackage with DCB ceramic base plate
zIsolation voltage 3600 V~
zPlanar passivated chips
zSoldering terminals
zUL registered E 72873
Applications
zInput rectifier for switch mode power
supplies (SMPS)
zSoftstart capacitor charging
zElectric drives and auxiliaries
Advantages
zEasy to mount with two screws
zSpace and weight savings
zImproved temperature and power
cycling
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Three Phase Half Controlled
Rectifier Bridge
2
1
34
5678
2
8
5
7
4
36
1
© 2011 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions. 20110113d
VVZ 12
Symbol Conditions Characteristic Values
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM ≤5mA
TVJ = 25°C ≤0.3 mA
VF, VTIF, IT = 30 A, TVJ = 25°C ≤2V
VT0 For power-loss calculations only 1.1 V
rT(TVJ = 125°C) 30 mΩ
VGT VD = 6 V; TVJ = 25°C ≤1.0 V
TVJ = -40°C ≤1.2 V
IGT VD = 6 V; TVJ = 25°C ≤65 mA
TVJ = -40°C ≤80 mA
TVJ = 125°C ≤50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM ≤0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM ≤5mA
ILIG = 0.3 A; tG = 30 µs TVJ = 25°C ≤150 mA
diG/dt = 0.3 A/µs TVJ = -40°C ≤200 mA
TVJ = 125°C ≤100 mA
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM ≤2µs
IG = 0.3 A; diG/dt = 0.3 A/µs
tqTVJ = 125°C; IT = 15 A, tp = 300 µs, -di/dt = 10 A/µs typ. 150 µs
QrVR = 100 V, dv/dt = 20 V/µs, VD = 2/3 VDRM 75 µC
RthJC per thyristor (diode); DC current 2.5 K/W
per module 0.42 K/W
RthJH per thyristor (diode); DC current 3.1 K/W
per module 0.52 K/W
dSCreeping distance on surface 7 mm
dACreepage distance in air 7 mm
aMax. allowable acceleration 50 m/s2
Dimensions in mm (1 mm = 0.0394")
