90 DE 1775470 OOO0S?? Lb 4775470 C O D I SEMICONDUCTOR INC sob 00577 D T/l-/} TO ) JANTXINS5S518B CO DI S . d t through JANTXIN5528B LOW NOISE emicon uc Or ne. VOLTAGE REGULATOR DIODES ADDRESS CHANGE LOW NOISE PLEAS Morag NDUGTOR: INC. LOW VOLTAGE Vv ic oh 13, 67933 REGULATOR DIODES aon 20008 to MIL-S-19500/437 400 mw - 3.3 to 8.2 volts APPLICA TIONS CODI's proprietary BiTaxial process provides a new approach to manufacturing a family of sharp knee, low noise, low leakage voltage regulator diodes. The advantages of this process becomes most pronounced to the circuit designer requiring good voltage regulation below 8.2V where ordinary Zener diodes fail to provide the following derived characteristics. High Stability Regulators Wave Shaping Comparator References Low Ripple Series Regulators OP Amp Regulators e Feedback Clamps High Reliability Components Low Noise Sharp Breakdown Voltages Controlled Voltage Regulation Low Dynamic Impedance Low Leakage MECHANICAL CHARACTERISTICS: DO-7 Package MAXIMUM RATINGS Symbol Parameter Maximum Unit P Continuous Power Dissipation. See Note 1 600 mw Ta (OPR) Operating (Free Air} Temperature Range. See Note 2 65 to + 200 % Tstg Storage Temperature Range 65 to + 200 % Lead Temperature 1/16 inch from case for 10 seconds 230 c Note 1: Derate finearly at the rate of 2.67 mw per C. above Ta of 50C Note 2: The device is lead conduntion cooled. The lead temperature 3/8 inch from the case must be no more than 8C greater than the free air temperature for these ratings to apply. CODI Semiconductor Inc., 350 Hurst Street, Linden, N.J., U.S.A. (201)862-8484 TLX 844-79640 DeQ.77sy70 oooos7s a &j 4775470 CO D I SEMICONDUCTOR INC 90D 00578 D Tell /l mee ES JANTXIN5518B through JANTXIN5528B LOW NOISE VOLTAGE REGULATOR DIODES es ELECTRICAL CHARACTERISTICS: JAN, JANTX TYPES ZENER TEST DYNAMIC NOISE REGULATION con near AE VOLTAGE | CURRENT | IMPEDANCE | DENSITY from t+ COEFICIENT JEDEC +5% (Note 3) @ 250 HA to lot Max, lre Vr TYPE Nom. Max. Max. Max. Max. Vz @ Ig tet Zz @ lat Av tat 25C 150C Vde mA Q wv i/uz | vac mA pA mA v | %/C Temp. IN5518B 3.3 20 26 0.5 0.90 2.0 5.0 10 1.0 | .07 IN5519B 3.6 20 24 0.5 0.90 2.0 3.0 6 1.0 | .065 IN55208 3.9 20 22 0.5 0.85 2.0 1.0 4 1.0 } .060 IN5521B 4.3 20 18 0.5 0.75 2.0 3.0 6 1.5 | -.055 +.02 IN5522B 47 10 22 0.5 0.60 1.0 2.0 6 2.0 | .043 +.025 IN5523B 5.1 5.0 26 0.5 0.65 0.25 2.0 6 2.5 | .03 +.03 IN5524B8 5.6 3.0 30 1.0 0.30 0.25 2.0 4 3.5 | .03 +.045 INS25B 6.2 1.0 30 1.0 0.20 0.01 1.0 4 5.0 +.05 IN5526B 6.8 1.0 30 1.0 0.10 0.01 1.0 5 6.2 +.052 INS527B 75 1.0 35 2.0 0.05 0.01 0.5 5 6.8 .058 IN5528B 8.2 1.0 40 4.0 0.05 0.01 0.5 5 75 .062 IN5529B 9.1 1.0 45 4.0 0.05 0.01 0.1 5 8.2 .068 IN5S30B 10.0 1.0 60 4.0 0.10 0.01 0.05 5 9.1 .075 t 1.0 nn aia en 1.0 MIN, 4 C + 002 = = + .010 DO-7 GLASS PACKAGE (400 milliwatts) Hermetic Seal These devices are also available in micro packages. Please consult factory. CODI Semiconductor Inc., 350 Hurst Street, Linden, N.J., U.S.A. (201)862-8484 TLX 844-796