TK5P60W
1
MOSFETs Silicon N-Channel MOS (DTMOS)
TK5P60W
TK5P60W
TK5P60W
TK5P60W
Start of commercial production
2012-09
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Switching Voltage Regulators
2.
2.
2.
2. Features
Features
Features
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.27 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
DPAK
1: Gate
2: Drain (Heatsink)
3: Source
2014-09-17
Rev.3.0
TK5P60W
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
(Tc = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
IDR
IDRP
Tch
Tstg
Rating
600
±30
5.4
21.6
60
71
1.4
5.4
21.6
150
-55 to 150
Unit
V
A
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
Rth(ch-c)
Max
2.09
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 63.1 mH, RG = 25 Ω, IAR = 1.4 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2014-09-17
Rev.3.0
TK5P60W
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
Test Condition
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 0.27 mA
VGS = 10 V, ID = 2.7 A
Min
600
2.7
Typ.
0.77
Max
±1
10
3.7
0.9
Unit
µA
V
Ω
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
Ciss
Crss
Coss
Co(er)
rg
tr
ton
tf
toff
dv/dt
Test Condition
VDS = 300 V, VGS = 0 V, f = 1 MHz
VDS = 0 to 400 V, VGS = 0 V
VDS = OPEN, f = 1 MHz
See Figure 6.2.1
VDD = 0 to 400 V, ID = 2.7 A
Min
25
Typ.
380
1.5
10
17
8.2
18
40
7
50
Max
Unit
pF
Ω
ns
V/ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Qgs1
Qgd
Test Condition
VDD ≈ 400 V, VGS = 10 V, ID = 5.4 A
Min
Typ.
10.5
2.7
5.8
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
VDSF
trr
Qrr
Irr
dv/dt
Test Condition
IDR = 5.4 A, VGS = 0 V
IDR = 2.7 A, VGS = 0 V
-dIDR/dt = 100 A/µs
IDR = 2.7 A, VGS = 0 V, VDD = 400 V
Min
15
Typ.
200
1.3
13
Max
-1.7
Unit
V
ns
µC
A
V/ns
2014-09-17
Rev.3.0
TK5P60W
4
7.
7.
7.
7. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
2014-09-17
Rev.3.0
TK5P60W
5
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 I
I
I
ID
D
D
D - V
- V
- V
- VGS
GS
GS
GS Fig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 V
V
V
VDS
DS
DS
DS - V
- V
- V
- VGS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.5
8.5
8.5
8.5 V
V
V
VDSS
DSS
DSS
DSS - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 8.6
8.6
8.6
8.6 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - I
- I
- I
- ID
D
D
D
2014-09-17
Rev.3.0
TK5P60W
6
Fig.
Fig.
Fig.
Fig. 8.7
8.7
8.7
8.7 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 8.8
8.8
8.8
8.8 I
I
I
IDR
DR
DR
DR - V
- V
- V
- VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.9
8.9
8.9
8.9 C - V
C - V
C - V
C - VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 8.10
8.10
8.10
8.10 E
E
E
EOSS
OSS
OSS
OSS - V
- V
- V
- VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.11
8.11
8.11
8.11 V
V
V
Vth
th
th
th - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 8.12
8.12
8.12
8.12 Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
2014-09-17
Rev.3.0
TK5P60W
7
Fig.
Fig.
Fig.
Fig. 8.13
8.13
8.13
8.13 r
r
r
rth
th
th
th - t
- t
- t
- tw
w
w
w
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig.
Fig.
Fig.
Fig. 8.14
8.14
8.14
8.14 E
E
E
EAS
AS
AS
AS - T
- T
- T
- Tch
ch
ch
ch
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig.
Fig.
Fig.
Fig. 8.15
8.15
8.15
8.15 P
P
P
PD
D
D
D - T
- T
- T
- Tc
c
c
c
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig.
Fig.
Fig.
Fig. 8.16
8.16
8.16
8.16 Test Circuit/Waveform
Test Circuit/Waveform
Test Circuit/Waveform
Test Circuit/Waveform
2014-09-17
Rev.3.0
TK5P60W
8
Fig.
Fig.
Fig.
Fig. 8.17
8.17
8.17
8.17 Safe Operating Area
Safe Operating Area
Safe Operating Area
Safe Operating Area
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2014-09-17
Rev.3.0
TK5P60W
9
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 0.36 g (typ.)
Package Name(s)
TOSHIBA: 2-7K1S
Nickname: DPAK
2014-09-17
Rev.3.0
TK5P60W
10
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
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TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
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• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
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EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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("UNINTENDED USE").
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regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
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TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2014-09-17
Rev.3.0