RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwis e specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FFM101
THRU
FFM107
DO-214AC
MAXIMUM RATINGS
(At TA = 25oC unless otherwise noted)
SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FAST RECOVERY SILICON RECTIFIER
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal.
4. Test Conditions: IF = 0.5A, IR = - 1.0A, IRR = -0.25A
Dimensions in inches and (millimeters)
2002-11
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
A
= 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Amps1.0
30
70
-55 to + 150
0
C/W
pF
0
C
UNITS
Volts
Volts
Maximum Thermal Resistance (Note 2) Rθ
JL
FFM101 FFM103FFM102 FFM104 FFM106FFM105 FFM107
50 100 200 400 600 800 1000
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
30
Volts
Amps
15
0
C/W
(Note 3) Rθ
JA
CHARACTERISTICS
Maximum Reverse Recovery Time (Note 4)
V
F
SYMBOL
I
R
trr
1.3
50
100 uAmps
uAmps
nSec
Maximum Full Load Reverse Current,Full cycle Average at T
A
= 25
o
C
Maximum Forward Voltage at 1.0A DC Volts
UNITS
Maximum DC Reverse Current at
Rated DC Blocking Voltage @T
A
= 25
o
C
@T
A
= 125
o
C
FFM101 FFM103FFM102 FFM104 FFM106FFM105 FFM107
5.0
150 250 500
uAmps
MECHANICAL DA TA
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
0.035 (0.89)
0.059 (1.50)
0.067 (1.70)
0.091 (2.31)
0.160(4.06)
0.180(4.57)
0.086 (2.18)
0.110 (2.79)
0.067 (1.70)
0.051 (1.29)
RECTRON
RATING AND CHARACTERISTIC CURVES ( FFM101 THRU FFM107 )
JUNCTION CAPACITANCE, (pF)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1.1 .2 .4 1.0 2 4 10 20 40 100
TJ = 25
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
SURGE CURRENT
124
68 10 20 40 6080100
50
40
30
20
10
0
8.3ms Single Half Sine-Wave
(JEDED Method)
trr
+0.5A
0
-0.25A
-1.0A 1cm SET TIME BASE FOR
50/100 ns/cm
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
50
NONINDUCTIVE 10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
TIME CHARACTERISTIC
FIG. 1 - TYPICAL FORWARD CURRENT
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, ( )
DERATING CURVE
1.0
.8
.6
.4
.2
00 25 50 75 100 125 150 175
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
TJ = 100
TJ = 25
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
0 20 40 60 80 100 120 140
.01
.04
.1
.4
10
1.0
4
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
TJ = 25
Pulse Width = 300us
1% Duty Cycle
.6 .8 1.0 1.2 1.4
20
10
1.0
.1
.01
CHARACTERISTICS
Mounting Pad Layout
RECTRON
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
0.094 MAX.
(2.38 MAX.)
(5.58) REF
Dimensions in inches and (millimeters)
