AOL1206
30V N-Channel MOSFET
General Description Product Summary
V
DS
ID (at VGS=10V) 54A
RDS(ON) (at VGS=10V) < 6mΩ
RDS(ON) (at VGS = 4.5V) < 8.5mΩ
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State RθJC
Maximum Junction-to-Case °C/W
°C/WMaximum Junction-to-Ambient
A
D
2
46
2.4
Power Dissipation BPDW
Power Dissipation APDSM W
TA=70°C
62
1.7
TA=25°C
A
TA=25°C IDSM A
TA=70°C
ID
54
42
TC=25°C
TC=100°C
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
13
Continuous Drain
Current
45
16
A30
The AOL1206 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled
with a "Schottky style" soft recovery body diode.
V
Maximum UnitsParameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
V±20Gate-Source Voltage
Drain-Source Voltage 30
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
16
38
20
Junction and Storage Temperature Range -55 to 175 °C
Thermal Characteristics
250
Pulsed Drain Current C
Continuous Drain
Current G
Parameter Typ Max
TC=25°C
2.7
31TC=100°C
G
D
S
UltraSO-8TM
Top View Bottom View
G
D
S
G
S
Rev0 : Feb 2010 www.aosmd.com Page 1 of 6
AOL1206
Symbol Min Typ Max Units
BVDSS 30 V
VDS=30V, VGS=0V 1
TJ=55°C 5
IGSS 100 nA
VGS(th) Gate Threshold Voltage 1.3 1.8 2.3 V
ID(ON) 250 A
56
TJ=125°C 7.4 9
6.8 8.5 m
Ω
gFS 70 S
VSD 0.7 1 V
IS54 A
Ciss 1110 1390 1670 pF
Coss 350 510 670 pF
Crss 32 53 90 pF
Rg0.4 0.9 1.5 Ω
Qg(10V) 15.5 19.6 23.5 nC
Qg(4.5V) 7 8.7 10.5 nC
Qgs 2.8 3.6 4.5 nC
Qgd 1.8 3 4.2 nC
tD(on) 6ns
tr2ns
tD(off) 20 ns
tf3.5 ns
trr 12 15 18 ns
Qrr 30 37 45 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Reverse Transfer Capacitance
IF=20A, dI/dt=500A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
VDS=VGS ID=250µA
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
RDS(ON) Static Drain-Source On-Resistance mΩ
IS=1A,VGS=0V
VDS=5V, ID=20A
VGS=4.5V, ID=15A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Maximum Body-Diode Continuous CurrentG
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
A
. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev0 : Feb 2010 www.aosmd.com Page 2 of 6
AOL1206
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
17
5
2
10
0
18
40
0
10
20
30
40
50
60
1 1.5 2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
ID(A)
0
2
4
6
8
10
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
IS (A)
25°C125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
VGS=4.5V
ID=15A
VGS=10V
ID=20A
0
5
10
15
20
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=20A
25°C
125°C
0
20
40
60
80
100
120
140
160
012345
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
ID (A)
VGS=3V
3.5V
5V
6V
10V
4V
4.5V
Rev 0: Feb 2010 www.aosmd.com Page 3 of 6
AOL1206
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
17
5
2
10
0
18
40
0
2
4
6
8
10
0 5 10 15 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
500
1000
1500
2000
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
20
40
60
80
100
120
140
0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJC Normalized Transient
Thermal R esi stan ce
Coss
C
rss
VDS=15V
ID=20A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
T
C
=25°C
1
00
µ
s
RθJC=2.4°C/W
Rev 0: Feb 2010 www.aosmd.com Page 4 of 6
AOL1206
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
ZθJA Normalized Transient
Thermal R esi stan ce
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
o
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
15
30
45
60
75
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
Current rating ID(A)
0
20
40
60
80
100
120
140
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
TA=25°C
RθJA=46°C/W
10.0
100.0
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
IAR (A) Peak Avalanche Current
TA=25°C
TA=150°C
TA=100°C
TA=125°C
Rev 0: Feb 2010 www.aosmd.com Page 5 of 6
AOL1206
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
tt
r
d(on)
ton
td(off) tf
toff
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
trr
Rev 0: Feb 2010 www.aosmd.com Page 6 of 6
