DATA SH EET
Product specification
File under Discrete Semiconductors, SC07 April 1989
DISCRETE SEMICONDUCTORS
PN4391 to 4393
N-channel silicon field-effect
transistors
April 1989 2
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PN4391 to 4393
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
PINNING
Note: Drain and source are
interchangeable.
1 = gate
2 = source
3 = drain
Fig.1 Simplified outline and symbol, TO-92.
handbook, halfpage
1
3
2
MAM042
s
d
g
QUICK REFERENCE DATA
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage ±VDS max. 40 V
Total power dissipation
up to Tamb =25°CP
tot max. 360 mW
PN4391 PN4392 PN4393
Drain current
VDS = 20 V; VGS =0 I
DSS min. 50 25 5 mA
Gate-source cut-off voltage
VDS = 20 V; ID= 1 nA −VGS off min. 4 2 0.5 V
max. 10 5 3 V
Drain-source on-resistance
ID= 1 mA; VGS =0 R
DS on max. 30 60 100 Ω
Drain-source voltage ±VDS max. 40 V
Gate-source voltage −VGSO max. 40 V
Gate-drain voltage −VGDO max. 40 V
Forward gate current (DC) IGmax. 50 mA
Total power dissipation
up to Tamb =25°CP
tot max. 360 mW
Storage temperature range Tstg −65 to+150 °C
Junction temperature Tjmax. 150 °C
April 1989 3
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PN4391 to 4393
THERMAL RESISTANCE
STATIC CHARACTERISTICS
Tj=25°C unless otherwise specified
From junction to ambient in free air Rth j-a = 350 K/W
PN4391 PN4392 PN4393
Reverse gate current
−VGS = 20 V; VDS =0 −I
GSS max. 1.0 1.0 1.0 nA
−VGS = 20 V; VDS =0
T
amb = 100 °C−IGSS max. 200 200 200 nA
Drain cut-off current
−VGS = 12 V VDS = 20 V IDSX max. 1.0 nA
−VGS =7 V I
DSX max. 1.0 nA
−VGS =5 V I
DSX max. 1.0 nA
−VGS = 12 V VDS = 20 V;
Tamb = 100 °C
IDSX max. 200 nA
−VGS =7 V I
DSX max. 200 nA
−VGS =5 V I
DSX max. 200 nA
Drain saturation current
VDS = 20 V; VGS =0 I
DSS min. 50 25 5 mA
max. 150 100 60 mA
Gate-source breakdown voltage
−IG=1µA; VDS =0 −V
(BR)GSS min. 40 40 40 V
Gate-source cut-off voltage
VDS = 20 V; ID=1nA −V
GS off min. 4.0 2.0 0.5 V
max. 10 5.0 3.0 V
Drain-source on-resistance
ID= 1 mA; VGS =0 R
DS on max. 30 60 100 Ω
Drain-source on-voltage
VGS = 0; ID= 12 mA VDS on max. 0.4 V
VGS = 0; ID= 6 mA VDS on max. 0.4 V
VGS = 0; ID= 3 mA VDS on max. 0.4 V
April 1989 4
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PN4391 to 4393
DYNAMIC CHARACTERISTICS
Tj=25°C unless otherwise specified
PN4391 PN4392 PN4393
Drain-source on-resistance
VDS = 0 V; VGS = 0; f = 1 kHz; Ta=25°CR
DS on max. 30 60 100 Ω
Input capacitance
VDS = 20 V; VGS = 0; f = 1 MHz; Ta=25°CC
iss max. 16 16 16 pF
Feedback capacitance
VDS =0;−V
GS =12V f = 1 MHz Crss max. 5 pF
VDS =0;−V
GS =7 V C
rss max. 5 pF
VDS =0;−V
GS =5 V C
rss max. 5 pF
Switching times
test conditions
VDD = 10 V; VGS = 0 to VGS off ID= 12 6.0 3.0 mA
−VGS off = 12 7.0 5.0 V
RL= 750 1550 3150 Ω
Rise time trmax. 5 5 5 ns
Turn-on time ton max. 15 15 15 ns
Fall time tfmax. 15 20 30 ns
Turn-off time toff max. 20 35 50 ns
Fig.2 Switching times test circuit.
o
k, halfpage
MBK289
50 Ω
RL
DUT
10 µF
1 µF
VDD 10 nF
50 Ω
SAMPLING
SCOPE
50 Ω
Fig.3 Input and output waveforms.
MBK288
−VGS off toff
tf
VGS = 0 V
Vi
Vo
10%
90%
90%
10%
ton
tr
April 1989 5
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PN4391 to 4393
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
April 1989 6
Philips Semiconductors Product specification
N-channel silicon field-effect transistors PN4391 to 4393
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
