©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
KSC5502D/KSC5502DT
1
1.Base 2.Collector 3.Emitter
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Thermal Charac teris tics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 1200 V
V CE O Collector-Emitter Voltage 600 V
VEBO Emitter-Base Voltage 12 V
ICCollector Current (DC) 2 A
ICP *Collector Current (Pulse) 4 A
IBBase Current (DC) 1 A
IBP *Base Current (Pulse) 2 A
PCCollector Dissipation (TC=25°C) 50 W
TJJunction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
EAS Avalanche Energy(Tj=25°C) 2.5 mJ
Symbol Characteristics Rating Unit
Rθjc Thermal Resistance Junction to Case 2.5 °C/W
Rθja Junction to Ambient 62.5
TLMaximun Lead Temperature for Soldering Purpose
: 1/8” from Case for 5 seconds 270 °C
KSC5502D/KSC5502DT
High Voltage Power Switch Switching
Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D-PAK or TO-220
D-PAK
TO-220
C
B
E
Equivalent Circuit
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
KSC5502D/KSC5502DT
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=1mA, IE=0 1200 1350 V
BVCEO Collector-Emitter Break down Voltage IC=5mA, IB=0 600 750 V
BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 12 13.7 V
ICES Collector Cut-off Current VCES=1200V ,
VBE=0 TC=25°C 100 µA
TC=125°C 500
ICEO Collector Cut-off Current VCE=600V, IB=0 TC=25°C 100 µA
TC=125°C 500
IEBO Emitter Cut-off Current VEB=12V, IC=0 TC=25°C10µA
hFE DC Current Gain VCE=1V, IC=0.2A TC=25°C152840
TC=125°C8 18
VCE=1V, IC=1A TC=25°C46.4
TC=125°C3 4.7
VCE=2.5V,
IC=0.5A TC=25°C122030
TC=125°C6 12
VCE(sat) Collector-Emitter Satu ration Voltage IC=0.2A,
IB=0.02A TC=25°C0.310.8V
TC=125°C0.541.1V
IC=0.4A,
IB=0.08A TC=25°C0.150.6V
TC=125°C0.231.0V
IC=1A, IB=0.2A TC=25°C0.401.5V
TC=125°C1.33.0V
VBE(sat) Base-Emitter Saturation Voltage IC=0.4A,
IB=0.08A TC=25°C0.771.0V
TC=125°C0.600.9V
IC=1A, IB=0.2A TC=25°C0.831.2V
TC=125°C0.701.0V
Cib Input Capacitance VEB=8V, IC=0, f=1MHz 385 500 pF
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 60 100 pF
fTCurrent Gain Bandwidth Product IC=0.5A,VCE=10V 11 MHz
VFDiode Forward Voltage IF=0.2A TC=25°C0.751.2V
TC=125°C0.59 V
IF=0.4A TC=25°C0.801.3V
TC=125°C0.64 V
IF=1A TC=25°C0.91.5V
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
KSC5502D/KSC5502DT
Electrical Characteristics TC=25°C unless otherwise noted
Symbo l Parameter Test Condi tion Min Typ. Max. Units
tfr Diode Froward Recvery Time
(di/dt=10A/µs) IF=0.2A
IF=0.4A
IF=1A
650
740
785
ns
ns
ns
VCE(DSAT) Dy namic Sat urat ion Voltage IC=0.4A, IB1=80mA
VCC=300V @ 1µs7.2V
@ 3µs1.8V
IC=1A, IB1=200mA
VCC=300V @ 1µs18V
@ 3µs6V
RESISTIVE LOAD SWITCHING ( D .C < 10%, Pulse Width=20s)
tON Turn On Time IC=0.4A,
IB1=80mA
IB2=0.2A,
VCC=300V
RL = 750Ω
TC=25°C 175 350 ns
TC=125°C 185 ns
tOFF Turn Off Ti me TC=25°C2.13.0µs
TC=125°C2.6 µs
tON Turn On Time IC=1A,
IB1=160mA
IB2=160mA,
VCC=300V
RL = 300Ω
TC=25°C 240 450 ns
TC=125°C 310 ns
tOFF Turn Off Ti me TC=25°C3.75.0µs
TC=125°C4.5 µs
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG Storage Time IC=0.4A,
IB1=80mA
IB2=0.2A,
VZ=300V
LC=200H
TC=25°C1.22.0µs
TC=125°C1.5 µs
tFFall Time TC=25°C 90 200 ns
TC=125°C65 ns
tCCross-over Time TC=25°C 185 350 ns
TC=125°C 145 ns
tSTG Storage Time IC=0.8A,
IB1=160mA
IB2=160mA,
VCC=300V
LC=200H
TC=25°C3.34.5µs
TC=125°C3.75 µs
tFFall Time TC=25°C 90 250 ns
TC=125°C 160 ns
tCCross-over Time TC=25°C 300 600 ns
TC=125°C 570 ns
©2001 Fairchild Semiconductor Corporation
KSC5502D/KSC5502DT
Rev. A2, August 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Vo lta ge
01234567
0
1
2
3
1A
900mA
800mA
700mA
600mA
500mA
400mA
300mA
IB=100mA
200mA
IC[A], COLLECTOR CURRENT
VCE[V ], CO L L E CT O R E M IT T E R VOL T A G E 1m 10m 100m 1
1
10
100
VCE=1V
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
hFE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT)
1m 10m 100m 1
0.1
1
10
IC=5IB
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
VCE(sat)
(V), VOLTAGE
IC(A), COLLECTOR CURRENT
1m 10m 100m 1
0.1
1
10
IC=10IB
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
VCE(sat)
(V), V OLTA G E
IC(A), COLLECTOR CURRENT
1m 10m 100m 1
0
1
2
TJ=25℃
℃℃
℃
2.0A
1.5A
1.0A
0.4A
IC=0.2A
VCE
[V], V O LT A G E
IB[A], BASE CURRENT 1m 10m 100m 1
0.1
1
10
IC=10IB
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
VBE
[V ], VOLTAG E
IC[A ], COL L EC TOR CUR RE NT
©2001 Fairchild Semiconductor Corporation
KSC5502D/KSC5502DT
Rev. A2, August 2001
Typical Characteristics (Continued)
Figure 7. Base-Emitter Saturation Voltage Figure 8. Diode Forward Voltage
Figure 9. Collector Output Capacitance Figure 10. Resistive Switching Time, ton
Figure 11. Resistive Switching Time, toff Figure 12. Resistive Switching Time, ton
1m 10m 100m 1
0.1
1
10
IC=5IB
TJ=25℃
TJ=125℃
VBE
[V], VOLTAGE
IC[A], COLLECTOR CURRENT
1m 10m 100m 1
0.1
1
10
TJ=25℃
TJ=125℃
VFD
[V ], V OLT A GE
IFD[A], FORW ARD CURRENT
1 10 100
10
100
1000
F=1MHz
Cob
Cib
CAPACITANCE[pF]
REVE RSE VO LTAG E[V] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
100100
200
300
400
500
600
700
800
900
10001000
2000 IC=5IB1=2IB2
VCC=300V
PW=20us
TJ=25℃
TJ=125℃
tON
[ns],TIME
IC[A], COLLECTOR CURRENT
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
11
1.5
2
2.5
3
3.5
4
4.5
5
IC=5IB1=2IB2
VCC=300V
PW=20us
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tON
(us),TIME
IC[A], CO LLECTOR CURRENT
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
100100
200
300
400
500
600
700
800
900
10001000
2000 IC=5IB1=5IB2
Vc=300V
PW=20us
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tON
(ns),TIME
IC[A], COLLECTOR CURRE NT
©2001 Fairchild Semiconductor Corporation
KSC5502D/KSC5502DT
Rev. A2, August 2001
Typical Characteristics (Continued)
Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tSTG
Figure 15. Inductive Switching Time, tFFigure 16. Inductive Switching Time, tc
Figure 17. Inductive Switching Time, tSTG Figure 18. Inductive Switching Time, tF
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
IC=5IB1=5IB2
Vc=300V
PW=20us
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tON
(us),TIME
IC[A], COLLECTOR CURRENT 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
11
1.5
2
2.5
3
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tSTG
(us),TIME
IC[A], COLLECTOR CURRENT
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
40
45
50
55
60
65
70
75
80
85
90
95
100
50
100
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tF(ns),TIME
IC[A], CO LLECTOR CURR ENT 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
100100
150
200
250
300
350
400
450
500
550
600
IC=5IB1=2IB2
VCC=15V
VZ=300V
LC=200uH
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tC[ns],TIME
IC[A], COLLECTOR CURREN T
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
2
2.5
3
3.5
4
4.5
5
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200uH
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tSTG
[us],TIME
IC[A], COLLECTOR CURRENT 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
50
60
70
80
90
100100
200
300
400
500
600
700
800
900
10001000
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200uH
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tF[ns],TIME
IC[A], COLLECTOR CURRENT
©2001 Fairchild Semiconductor Corporation
KSC5502D/KSC5502DT
Rev. A2, August 2001
Typical Characteristics (Continued)
Figure 19. Inductive Switching Time, tcFigure 20. Inductive Switching Time, tSTG
Figure 21. Inductive Switching Time, tFFigure 22. Inductive Switching Time, tc
Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1123
100100
200
300
400
500
600
700
800
900
10001000
2000
IC=5IB1=5IB2
VCC=15V
VZ=300V
LC=200uH
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tSTG
[ns],TIME
IC[A], COLLECTOR CURRENT 4 5 6 7 8 9 10 11 12 13 14
1
2
IC=2IB2
VCC=15V
VZ=300V
LC=200uH
IC=0.4A
IC=0.8A
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tSTG
, TIME [us ]
hFE, FORCED G AIN
4567891011121314
40
60
80
IC=2IB2
VCC=15V
VZ=300V
LC=200uH
IC=0.4A
IC=0.8A
TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tF, T IME [n s ]
hFE, F O RC E D G A IN 4 5 6 7 8 9 10 11 12 13 14
80
120
160
200
IC=2IB2
VCC=15V
VZ=300V
LC=200uH
IC=0.4A
IC=0.8A TJ=25℃
℃℃
℃
TJ=125℃
℃℃
℃
tC, T IME [n s]
hFE, FORCED GAIN
10 100 1000
0.01
0.1
1
10
TC=25℃
℃℃
℃
50us1ms
5ms
DC
IC[A], COLLECTOR CU RRENT
VCE[A ], C O L L E C TO R EMIT T E R VOL T A GE 0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
PC[W ], P OWE R D ISSIPATIO N
TC(℃), CASE TEM P ERAT UR E
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
KSC5502D/KSC5502DT
Typical Characteristics (Continued)
Figure 25. Forward Bias Safe Operating Area Figure 26. Power Derating
10 100 1000
0.01
0.1
1
10
TC=25℃
℃℃
℃
50us1ms
5ms
DC
IC[A], COLLECTOR CU RRENT
VCE[A ], C O L L E C TO R EMIT T E R VOL T A GE 0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
PC[W ], P OWE R D ISS IP A T ION
TC(℃), CASE T EM PER ATU R E
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
KSC5502D/KSC5502DT
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001
KSC5502D/KSC5502DT
Dimensions in Millimeters
Package Demensions (Continued)
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20 9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10 0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWE R is used under license
