O1712 TKIM TC-00002829/62504 TSIM TB-00000306/70500 TS (KOTO) TA-2786 No.6394-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
CPH3114
Bipolar Transistor
–15V, –1.5A, Low VCE(sat), PNP Single CPH3
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Applications
• Relay drivers, lamp drivers, motor drivers, fl ash
Features
• Adoption of MBIT processes
• Large current capacity
• Low collector-to-emitter saturation voltage
• High-speed switching
• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)
• High allowable power dissipation
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --15 V
Collector-to-Emitter Voltage VCEO --15 V
Emitter-to-Base Voltage VEBO --5 V
Collector Current IC--1.5 A
Collector Current (Pulse) ICP --3 A
Base Current IB--300 mA
Collector Dissipation PC
When mounted on ceramic substrate (600mm2×0.8mm)
0.9 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7015A-003
Ordering number : EN6394D
Product & Package Information
• Package : CPH3
• JEITA, JEDEC : SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
3
2
1
AP
LOT No.
TL
CPH3114-TL-E
1 : Base
2 : Emitter
3 : Collecto
r
CPH3
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
21
3
0.95
CPH3114
No.6394-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB= --12V, IE=0A --0.1 μA
Emitter Cutoff Current IEBO VEB= --4V, IC=0A --0.1 μA
DC Current Gain hFE VCE= --2V, IC= --100mA 200 560
Gain-Bandwidth Product fTVCE= --2V, IC= --300mA 350 MHz
Output Capacitance Cob VCB= --10V, f=1MHz 17 pF
Collector-to-Emitter Saturation Voltage VCE(sat)1 IC= --750mA, IB= --15mA --120 --180 mV
VCE(sat)2 IC= --1.5mA, IB= --30mA --210 --320 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC= --750mA, IB= --15mA --0.85 --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC= --10μA, IE=0A --15 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE=∞ --15 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE= --10μA, IC=0A --5 V
Turn-ON Time ton See specifi ed Test Circuit. 50 ns
Storage Time tstg 90 ns
Fall Time tf15 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
CPH3114-TL-E CPH3 3,000pcs./reel Pb Free
++
50Ω
INPUT OUTPU
T
VRRBRL
VCC= --5V
220μF 470μF
VBE=5V
PW=20μsIB1
IB2
DC≤1%
IC=20IB1= --20IB2= --750mA
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
IC -- VCE
0 --0.2--0.1 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IT01691
--50mA
--30mA
--10mA
--40mA
--20mA
--2mA
--4mA
--6mA
--8mA
IB=0
--1.0
--0.5
--0.9
--0.8
--0.7
--0.6
--0.4
--0.3
--0.2
--0.1
0
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
Collector Current, IC -- A
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
VCE= --2V
--25°C
25°C
Ta=75°C
IT01693
CPH3114
No.6394-3/6
Collector Current, IC -- A
hFE -- IC
DC Current Gain, hFE
1000
7
5
3
2
10 23 57
--0.01 --1.0--0.1 23 57 23
100
7
5
3
2
VCE= --2V
--25°C
Ta=75°C
IT01695
25°C
Collector Current, IC -- A
fT -- IC
Gain-Bandwidth Product, fT -- MHz
23 57 23 257
--0.01 --1.0--0.1 3
10
1000
5
7
100
3
2
5
7
3
2
VCE= --2V
IT01697
1.0
100
5
7
10
3
2
5
7
3
2
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
23 57
--1.0 --10 23
IT01699
f=1MHz
Collector Current, IC -- A
VCE(sat) -- IC
23 57
--0.01 --1.0--0.1 23 57 23
--1000
7
5
3
2
--100
7
5
3
2
--10
7
5
IC / IB=20
--25°C
25°C
Ta=75
°
C
IT01701
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
23 57
--0.01 --1.0--0.1 23 57 23
--1000
7
5
3
2
--100
7
5
3
2
--10
7
5
Collector Current, IC -- A
VCE(sat) -- ICIC / IB=50
75
°
C
25°C
Ta= --25
°
C
IT01703
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
VBE(sat) -- IC
--10
7
5
3
2
--0.1 23 57
--0.01 --1.0--0.1 23 57 23
--1.0
7
5
3
2
IC / IB=50
Ta= --25°C
75°C
IT01705
25°C
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
23 57
--0.1 --10--1.0 23 57 23 Ambient Temperature, Ta -- °C
PC -- Ta
Collector Dissipation, PC -- W
1.4
0
0.2
0.4
0.6
0.8
0.9
1.0
1.2
0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector Current, IC -- A
2
--10
2
3
5
7
--1.0
2
3
5
7
--0.1
3
5
7
--0.01
DC operation
100ms
10ms
500
μ
s
100μs
ICP= --3A
IC= --1.5A
IT01707 IT01708
1ms
Mounted on a ceramic board (600mm2✕0.8mm)
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm)
CPH3114
No.6394-4/6
Embossed Taping Specifi cation
CPH3114-TL-E
CPH3114
No.6394-5/6
Outline Drawing Land Pattern Example
CPH3114-TL-E
Mass (g) Unit
0.013
* For reference
mm Unit: mm
0.6
2.4
0.95 0.95
1.4
CPH3114
PS No.6394-6/6
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