MBR320M MBR330M MBR340M tion and metal overlap contact. Extremely Low ve Low Stored Charge, Majority Carrier Conduction HOT CARRIER POWER RECTIFIERS . employing the Schottky Barrier principle in a large area metat-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passiva- Ideally suited for use as rectifiers in jow-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. Low Power Loss/High Efficiency High Surge Capacity SCHOTTKY BARRIER RECTIFIERS 3 AMPERE 20, 30, 40 VOLTS MAXIMUM RATINGS j Rating Symbol | MBR320M!MBR330M) MBR340N] Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 20 30 40 Voits DC Blocking Voltage VR Non- Repetitive Peak Reverse Voltage VrRsmM 24 36 48 Valts Average Rectified Forward Current !o Amp VR (equiv) < 0.2 VR (ded, Te = 65C ~ 15 > VRiequiv)< 0.2 VRdde}, Ty = 90C 3.0 _> | (Re ja= 25CM, P.C. Board 8 Mounting, See Note 3) A Ambient Temperature Ta % 1 Rated VR (de), Priay) = 0 65 60 55 | |p Roya = 25C/W K Non- Repetitive Peak Surge Current lesm Amp (surge applied at rated load condi- ~t 500 (for 1 cycle) tions, halfwave, single phase 60 Hz) ite Operating and Storage Junction TT stg ~t. -65 to +125 ~ % cL] Temperature Range (Reverse | = Voltage applied) STYLE t: Peak Operating Junction Temperature TJipk} ae 15 __ oC K PIN 1. CATHODE {Forward Current Applied) | 2. ANODE 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Resc 3.0 ociw ELECTRICAL CHARACTERISTICS (Tg = 25C unless otherwise noted.) CASE 60 Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward VF Volts MECHANICAL CHARACTERISTICS Voltage (1) lig = Co Amp) _ _ 0.450 CASE: Welded, hermetically sealed construction. 7 FINISH: All external surfaces corrosion-resistant Maximum Instantaneous Reverse 'R mA , : and the terminal teads are readily Current @ rated de Voitage (1) solderable, To = 26C 7 - 0 POLARITY: Cathode to cz To = 100C _ _ 5 : Cathode to case. (1) Pulse Test: Pulse Width = 300 us, Duty Cycle = 2.0%. 56 MOUNTING POSITIONS: AnyMBR320M, MBR330M, MBR340M (continued) NOTE 1: DETERMINING MAXIMUM RATINGS Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 Vawm. Proper derating may be accomplished by use of equation (1}: Ta(max) = Ty{max) Resa PFiav) ResaPriav) = (1) where TAtmax) 7 Maximum atlowable ambient temperature Tj(max) = Maximum atlowable junction temperature (125C or the temperature at which ther- mai runaway occurs, whichever is lowest). PE( Ay) = Average forward power dissipation PR(Av) = Average reverse power dissipation Rg Ja = Junction-to-ambient thermal resistance Figures 1, 2 and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures soive for a reference temperature as determined by equation (2): TR = Tyimax) ResaPR(av) (2) Substituting equation (2) into equation (1) yields: Taimax) = TR ~ Rega PF(AV) (3) Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermat runaway occurs or where Ty = 125C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2 and 3 as a difference in the rate of change of the slope in the vicinity of 115C. The data of Figures 1, 2 and 3 is based upon de condi- tions. For use in common rectifier circuits, Table | indicates sug gested factors for an equivalent dc voltage to use for conservative design; i.e.: VR(equiv) = VIN(PK) * F (4) The Factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. Example: Find Ta(max) for MBR340M operated in a 12-Volt dc supply using a bridge circuit with capacitive filter such that Ipc = 10 A (iE(ay) = 5 A), ipK)/I(AV) = 10, input Voltage = 10 Virms), Roya = 10C/W. Step 1: Find VRequiv). Read F = 0.65 from Table|l a VRiequiv) = (1.41)(10)(0.65) = 9.2 V Step 2: Find Tp from Figure 3. Read TR = 117C @ VR = 9.2 V & Reya= 10C/W. Step 3: Find Pe; ay) from Figure4. Read Pe(ay) = 6.3W ( @ PKL 10 & lF(ayy = 5A av) Step 4: Find TA(max) from equation (3). Ta(max) = 117-(10) {6.3} = 54C. TABLE | VALUES FOR FACTOR F : : 2 . Full Wave, Circuit Half Wave Full Wave, Bridge Center Tapped (1), (2) Load Resistive | Capacitive (1)| Resistive | Capacitive Resistive | Capacitive Sine Wave 05 1.3 0.5 0.65 1.0 4.3 Square Wave 0.75 1.5 0.75 0.75 15 16 (1) Note that Va(pK) 2 Vin (pK) FIGURE 1 MAXIMUM REFERENCE TEMPERATURE MBR320M 125 70 5075 116 3.0 105 95 85 78 Tr, REFERENCE TEMPERATURE (C) 65 55 20 3.0 40 6.0 7.0 10 1 20 Vr, REVERSE VOLTAGE (VOLTS) FIGURE 3 - MAXIMUM REFERENCE TEMPERATURE - MBR340M 125 va 5.0 I Oa 5 4059 105 95 (C/W) = 70 85 60 50 B 40 Tr, REFERENCE TEMPERATURE (C) 65 55 40 5.0 7.0 10 15 20 30 40 Vr, REVERSE VOLTAGE (VOLTS) (2)Use line to center tap voltage for Vin. FIGURE 2 MAXIMUM REFERENCE TEMPERATURE MBR330M 125 7050 a 105 98 (OCW) = 70 85 15 TR, REFERENCE TEMPERATURE (C) 65 55 3.0 400 5.0 7.0 10 15 20 30 Vp, REVERSE VOLTAGE (VOLTS) FIGURE 4 FORWARD POWER DISSIPATION 20 SINE WAVE 10 NK) Ta 5.0 Vv} CAPACITIVE } 5 2.0 1.0 0.5 2 ae a Pray), AVERAGE POWER DISSIPATION (WATTS) S o 2 02 03 05 07 10 20 3.0 IF(Av), AVERAGE FORWARD CURRENT (AMP) $0 7.0 10 570.05 0.03 0.02 ATJC = Ppk > Rose (D+ (9-D)- ity + tp) + eltp)rity] where A TJC = the increase in junction temperature above the case temperature MBR320M, MBR330M, MBR340M (continued) THERMAL CHARACTERISTICS FIGURE 5 THERMAL RESPONSE 1.0 wu 07 z Os a @ 8 r(t) e 02 8 ca ao Pa uhh re , Pok, is peak of an = 2 007 ht] 4 TIME equivalent square power pulse. g = - = 0.01 .0 20 NOTE 2 FINDING JUNCTION TEMPERATURE e(t) = normalized value of transient thermal resistance at time, t, from Figure , i.e.: Ht] + tp} = normalized value of transient thermal resistance at time, t1 + tp. 50 100 200 500 10k 2.0k 10k 20k t, TIME (ms} 5.0k 50k NOTE 3 - MOUNTING DATA Pok OUTY CYCLE, D= ty/ty tp-a| PEAK POWER. Pok, 'S peak of an equivalent square power pulse. TIME , fee 1 =| To determing maximum junction temperature of the diode in a given situation, the following procedure is recommended: The temperature of the case should be measured using a thermocouple placed On the case at the temperature reference point (see Note 3). The thermal mass connected to the case is oormaily large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured valus of Tc, the junction temperature may be determined by: Ty=Te #4 TC where S Tye is the increase in junction temperature above the case temperature. MH may be determined by: ST Je = Ppk Rese [D+ (3 - D) - (ty + tp) + eltp) - tty] ere whi rit) = normalized value of transient thermal resistance at time, t, trom Figure Site; {ty + tp) = normalized value of transient thermal resistance at time ty * tp Data shown for thermal resistance junction-to-ambient (Resa) for the mountings shown is to be used as typical guideline values for preliminary engineering. TYPICAL VALUES FOR Roja IN STILL AIR LEAD LENGTH, L (IN) MOUNTING METHOD TZ] 1 Rasa 1 55 60 oc/w 2 65 70 c/w 3 25 c/w MOUNTING METHOD 1 me Lee | cheats MOUNTING METHOD 2 MOUNTING METHOD 3 P. . Board with 2 1/2" x 2 1/2" copper surface L = 5/8" Po Board Ground Co Vector pin mounting Plane FIGURE 6 - APPROXIMATE THERMAL CIRCUIT MODEL Reca 70C/w * WM Raia) Resta) Resc Res(a) 40C/W/IN 25C/w 2c/w WA ANA NAN AA x Rec. Revik) Resi) 0.5C/w 40C/W/IN Tara) TLIA) Ty { Po Taik) = Ta Use of the above model permits calcuJation of average TEMPERATURES THERMAL RESISTANCES junction temperature for any mounting situation, Lowest values of thermal resistance will occur when the cathode lead is brought as close as possible to a heat dissipator; as heat conduction through the anode lead is small. Terms in the model are defined as follows: *Case temperature reference is at cathode end. Ta = Ambient Reca = Case to Ambient Ta(aA) = Anode Heat Sink Ambient Regia) = Anode Lead Heat Sink to Ambient Ta(K) = Cathode Heat Sink Ambient Res(x) = Cathode Lead Heat Sink to Ambient Tu(a)= Anode Lead Re L(a)= Anode Lead TL(k) = Cathode Lead Rei(k)= Cathode Lead Ty = Junction Rect = Case to Cathode Lead Resc = Junction to Case Rg Jj(A) = Junction to Anode Lead (S bend) 58C, CAPACITANCE (pF} if, INSTANTANEOUS FORWARD CURRENT (AMP) MBR320M, MBR330M, MBR340M (continued) FIGURE 7 TYPICAL FORWARD VOLTAGE 200 70 $0 30 20 7.0 5.0 3.0 2.0 07 05 0.3 0.2 0.4 0.6 0.8 1.0 1 vf, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 14 FIGURE 10 ~ CAPACITANCE 2500 2000 3$00 1000 ~~ S 3 M8R330M 500 400 300 250 0.04 0.06 0.1 02 0406 10 20 40 60 Va, REVERSE VOLTAGE (VOLTS} 10 20 40 59 FIGURE 8 MAXIMUM SURGE CAPABILITY 1000 Prior to surge, the rectifier is opereted 700 that Ty = 100C: VaRM may be applied be- tween each cycle of surge. f= 500 300 200 IfSM, PEAK HALF-WAVE CURRENT (AMP) 100 1.0 2.0 5.0 10 20 50 100 NUMBER OF CYCLES FIGURE 9 TYPICAL REVERSE CURRENT 200 Ty = 1259C eB roe o> GS = ON o o ip, REVERSE CURRENT (mA) MBR320M 20 M8A330M - 30 V ~MBR340M 40.V o wn 2 Nn a 4.0 8.0 12 16 20 24 28 Vp, REVERSE VOLTAGE (VOLTS) 32 36 40 NOTE 4 HIGH FREQUENCY OPERATION Since current fiow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a rnodel consisting of an ideal diode in paraliel with a variable capacitance, (See Figure 10). Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, retative waveform rectification efficiency is approximately 70 per cent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage.