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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FGH60N60SFD 600 V, 60 A Field Stop IGBT Features General Description * High Current Capability Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. * Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A * High Input Impedance * Fast Switching * RoHS Compliant Applications * Solar Inverter, UPS, Welder, PFC C E C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD Description Collector to Emitter Voltage Ratings Unit 600 V Gate to Emitter Voltage 20 Transient Gate-to-Emitter Voltage 30 V Collector Current @ TC = 25oC 120 A Collector Current @ TC = 100oC 60 A 25oC 180 A o W Pulsed Collector Current @ TC = Maximum Power Dissipation @ TC = 25 C 378 Maximum Power Dissipation @ TC = 100oC 151 W TJ Operating Junction Temperature -55 to +150 o Tstg Storage Temperature Range -55 to +150 o TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds C C oC 300 Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature Thermal Characteristics Symbol RJC(IGBT) Parameter Thermal Resistance, Junction to Case Typ. Max. - 0.33 Unit o C/W C/W C/W RJC(Diode) Thermal Resistance, Junction to Case - 1.1 o RJA Thermal Resistance, Junction to Ambient - 40 o (c)2008 Fairchild Semiconductor Corporation FGH60N60SFD Rev. 1.4 1 www.fairchildsemi.com FGH60N60SFD -- 600 V, 60 A Field Stop IGBT March 2015 Part Number Top Mark FGH60N60SFDTU FGH60N60SFD Package Packing Method TO-247 Parameter Tape Width Quantity N/A N/A 30 Tube Electrical Characteristics of the IGBT Symbol Reel Size TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 600 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A BVCES / TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 A - 0.4 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA 4.0 5.0 6.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE IC = 60 A, VGE = 15 V - 2.3 2.9 V VCE(sat) Collector to Emitter Saturation Voltage IC = 60 A, VGE = 15 V, TC = 125oC - 2.5 - V - 2820 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz - 350 - pF - 140 - pF Switching Characteristics td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time - 134 - ns tf Fall Time - 31 62 ns Eon Turn-On Switching Loss - 1.79 - mJ Eoff Turn-Off Switching Loss - 0.67 - mJ VCC = 400 V, IC = 60 A, RG = 5 , VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 2.46 - mJ td(on) Turn-On Delay Time - 22 - ns tr Rise Time - 44 - ns td(off) Turn-Off Delay Time - 144 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.0 - mJ Ets Total Switching Loss - 2.88 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge (c)2008 Fairchild Semiconductor Corporation FGH60N60SFD Rev. 1.4 VCC = 400 V, IC = 60 A, RG = 5 , VGE = 15 V, Inductive Load, TC = 125oC VCE = 400 V, IC = 60 A, VGE = 15 V 2 - 43 - ns - 1.88 - mJ - 198 - nC - 22 - nC - 106 - nC www.fairchildsemi.com FGH60N60SFD -- 600 V, 60 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25C unless otherwise noted Test Conditions IF = 30 A IF = 30 A, diF/dt = 200 A/s Qrr Diode Reverse Recovery Charge (c)2008 Fairchild Semiconductor Corporation FGH60N60SFD Rev. 1.4 Min. Typ. Max TC = 25oC - 2.0 2.6 TC = 125oC - 1.8 - TC = 25oC - 47 - - 179 - TC = 25oC - 83 - o - 567 - TC = 125oC TC = 125 C 3 Unit V ns nC www.fairchildsemi.com FGH60N60SFD -- 600 V, 60 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 180 180 o 15V 150 12V 10V 120 90 60 VGE = 8V 15V 12V 10V 120 90 60 VGE = 8V 30 0 0 0 2 4 6 Collector-Emitter Voltage, VCE [V] 8 0 Figure 3. Typical Saturation Voltage Characteristics 2 4 6 Collector-Emitter Voltage, VCE [V] 8 Figure 4. Transfer Characteristics 180 180 Common Emitter VGE = 15V 150 o TC = 125 C 120 Common Emitter VCE = 20V 150 o TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 20V 150 30 90 60 o TC = 25 C o TC = 125 C 120 30 90 60 30 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 5 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1 2 3 4 Gate-Emitter Voltage,VGE [V] 5 Figure 6. Saturation Voltage vs. VGE 4.0 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] o TC = 125 C 20V Collector Current, IC [A] TC = 25 C Collector Current, IC [A] Figure 2. Typical Output Characteristics 3.5 120A 3.0 2.5 60A 2.0 IC = 30A 1.5 Common Emitter o TC = -40 C 16 12 8 120A 4 60A IC = 30A 1.0 25 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] (c)2008 Fairchild Semiconductor Corporation FGH60N60SFD Rev. 1.4 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH60N60SFD -- 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 8. Saturation Voltage vs. VGE 16 12 8 120A 4 60A IC = 30A 0 0 TC = 125 C 16 12 8 60A 4 IC = 30A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 Figure 9. Capacitance Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 6000 Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] 5000 Capacitance [pF] 120A o TC = 25 C Cies 4000 3000 Coes 2000 1000 TC = 25 C 12 300V VCC = 100V 9 200V 6 3 Cres 0 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 100 150 Gate Charge, Qg [nC] 200 Figure 12. Turn off Switching SOA Characteristics 500 300 10s 100 100 100s 10 Collector Current, IC [A] Collector Current, Ic [A] 50 1ms 10 ms 1 DC Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 10 Safe Operating Area o 0.01 VGE = 15V, TC = 125 C 1 1 10 100 Collector-Emitter Voltage, VCE [V] (c)2008 Fairchild Semiconductor Corporation FGH60N60SFD Rev. 1.4 1000 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 5 www.fairchildsemi.com FGH60N60SFD -- 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Gate Resistance Figure 14. Turn-off Characteristics vs. Gate Resistance 300 6000 Common Emitter VCC = 400V, VGE = 15V IC = 60A Switching Time [ns] Switching Time [ns] 100 tr Common Emitter VCC = 400V, VGE = 15V IC = 60A td(on) o 1000 TC = 25 C o TC = 125 C td(off) 100 tf o TC = 25 C o TC = 125 C 10 10 0 10 20 30 40 Gate Resistance, RG [] 0 50 20 30 40 50 Gate Resistance, RG [] Figure 15. Turn-on Characteristics vs. Collector Current Figure 16. Turn-off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 5 500 Common Emitter VGE = 15V, RG = 5 o TC = 25 C o o Switching Time [ns] TC = 25 C o Switching Time [ns] 10 TC = 125 C tr 100 td(on) TC = 125 C td(off) 100 tf 10 0 20 40 60 80 100 120 10 0 Collector Current, IC [A] Figure 17. Switching Loss vs Gate Resistance 20 80 100 120 30 Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 5 10 IC = 60A o TC = 25 C o TC = 25 C Switching Loss [mJ] Switching Loss [mJ] 60 Figure 18. Switching Loss vs Collector Current 20 10 o TC = 125 C Eon Eoff 1 0.5 0 40 Eon o TC = 125 C Eoff 1 0.1 10 20 30 40 Gate Resistance, RG [] (c)2008 Fairchild Semiconductor Corporation FGH60N60SFD Rev. 1.4 50 0 20 40 60 80 100 120 Collector Current, IC [A] 6 www.fairchildsemi.com FGH60N60SFD -- 600 V, 60 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 200 500 100 100 o Reverse Current , IR [A] Forward Current, IF [A] TC = 125 C o TJ = 125 C o TJ = 25 C 10 o TJ = 75 C o TC = 25 C 10 o TC = 75 C 1 0.1 o TC = 25 C o TC = 125 C 0.01 1 0 1 2 3 Forward Voltage, VF [V] 0 4 Figure 21. Stored Charge 600 Figure 22. Reverse Recovery Time 100 60 80 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 200 400 Reverse Voltage, VR [V] 200A/s diF/dt = 100A/s 60 200A/s 50 di/dt = 100A/s 40 o TC = 25 C 30 40 5 20 40 5 60 20 40 60 Forward Current, IF [A] Forward Current, IF [A] Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.01 0.05 0.02 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] (c)2008 Fairchild Semiconductor Corporation FGH60N60SFD Rev. 1.4 7 www.fairchildsemi.com FGH60N60SFD -- 600 V, 60 A Field Stop IGBT Typical Performance Characteristics 4.82 E 4.58 15.87 E 15.37 A 12.81 E 4.13 3.53 6.85 6.61 5.58 E 5.34 5.20 4.96 B 3.65 E 3.51 M 0.254 B A M 1.35 0.51 20.82 E 20.32 1 2 3 3 1.87 1.53 (2X) 3.93 E 3.69 13.08 MIN 16.25 E 15.75 1.60 2.77 2.43 0.71 0.51 5.56 2.66 2.29 1.35 1.17 11.12 0.254 M B A M NOTES: UNLESS OTHERWISE SPECIFIED. A. PACKAGE REFERENCE: JEDEC TO-247, ISSUE E, VARIATION AB, DATED JUNE, 2004. B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DRAWING CONFORMS TO ASME Y14.5 - 1994 E DOES NOT COMPLY JEDEC STANDARD VALUE F. DRAWING FILENAME: MKT-TO247A03_REV04 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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