IGD616
Preliminary
Data Sheet IGD616
Single Channel SCALE IGBT Driver Core
A successor to the IGD608/615 single-channel gate driver cores
for 1200V and 1700V IGBTs
The IGD616 is a highly-integrated single IGBT
driver core based on CONCEPT's proprietary
SCALE technology which has been established
on the market as an industrial standard since
1999.
The IGD616 has been developed for direct
replacement of IGD608 and IGD615. It features
a dedicated set of compatible items to ease
seamless transition in existing designs. Its drive
power and performance exceed prior
specifications such that now one single driver
core IGD616 will cover the range of both
IGD608 and IGD615 at a superior reliability
level.
The driver core is optimized to match various IGBTs and applications from 100A /
1200V to 1000A / 1700V and beyond.
Features Applications
[ Direct replacement of IGD615 [ Driving 1200V and 1700V IGBTs
[ Highly approved SCALE technology [ Switching DC to 150 kHz
[ Non-inverting or optionally inverting inputs [ Duty cycle 0 ... 100%
[ Gate drive capability 16A, 6W [ Operating temp. -40 ... +85 °C
[ Typical delay time of 315ns [ Two-level topologies
[ Power supply voltage monitoring set to 11.5V [ AC drives, SMPS, etc.
[ Superior EMC (dv/dt > 100V/ns, ESD > 2kV) [ Industry, traction, wind power
[ Highly flexible single-channel design
[ Command signal transmitted via transformer interface
[ Fault signal via transformer interface or optional optocoupler
[ 22ms blocking time at fault with custom-specific time options
IGBT-Driver.com Page 1
IGD616
Preliminary Data Sheet
Page 2 CT-Concept.com
Compatibility to IGD608 / IGD615 Gate Drivers
The IGD616 is available with different options covering a dedicated set of compatible
items. In this data sheet, the text referring to critical compatible items is underlined.
Option N and Option I select between non-inverting and inverting inputs respectively. It
is no longer possible to interchange the IN+ and IN- inputs to invert the logic.
On the secondary side, any fault state is extended by a period known as the command
blocking time. During this time, the driver is kept in the off-state. The command
blocking time is set at the factory to a nominal value of 22ms. Other values upon
request. It is no longer possible for the application to adjust the blocking time.
For option T, the signal transformer interface is used to transfer the secondary fault
signal to the primary side. This transfer may be performed at each change in the
command signal, but only during the blocking time. For option C, an optocoupler is
used to transfer the secondary-side fault state to the primary side within a delay of less
than several microseconds. The initial creepage distance and the maximum operating
voltage are reduced by the optocoupler.
For a summary, refer to the Ordering Information section on the last page.
IGD616
Preliminary Data Sheet
Block Diagram of IGD616 Option T
Pulse
transceiver
Pulse
transceiver Control
logic Driver
Vce
monitoring
Supply
voltage
monitoring
Control
logic
IGD 001
LDI 001
IGD616NT / IGD616IT
Not for version "N"
Not for version "I"
25
20
21
19
16
15
17
18
22
IN+
IN-
SO+
SO-
ME
G
E
N.C.
Ref
23 Cs
24 COM
3
10
V
CC
GND
4
GND
9
GND
2
GND
1
GND
30 res.
DC/DC
converter
control
Fig. 1 Block diagram of the IGD616 (option T, i.e. fault signal via signal transformer
interface). Non-inverting inputs (option N) or inverting inputs (option I).
Not connected pins are designated as N.C.
IGBT-Driver.com Page 3
IGD616
Preliminary Data Sheet
Block Diagram of IGD616 Option C
Pulse
transceiver
Pulse
transceiver Control
logic Driver
Vce
monitoring
Supply
voltage
monitoring
Control
logic
IGD 001
LDI 001
IGD616NC / IGD616IC
Not for version "N"
Not for version "I"
25
20
21
19
16
15
17
18
22
IN+
IN-
SO+
SO-
ME
G
E
N.C.
Ref
23 Cs
24 COM
3
10
V
CC
GND
4
GND
9
GND
2
GND
1
GND
30 res.
DC/DC
converter
control
Fig. 2 Block diagram of the IGD616 (option C, i.e. fault signal via optocoupler).
Non-inverting inputs (option N) or inverting inputs (option I).
Not connected pins are designated as N.C.
Page 4 CT-Concept.com
IGD616
Preliminary Data Sheet
IGBT-Driver.com Page 5
Pin Description
No. Pin Name Function
1-16 Primary-side terminal
1- 4 GND Power supply and logic ground
5- 8 Physically not present
9 GND Power supply and logic ground
10 VCC Power supply positive voltage referenced to pin GND
11-14 Physically not present
15 SO+ Status output positive voltage referenced to pin SO-
16 SO- Status output negative voltage referenced to pin SO+
17 IN- For option I: Inverting input referenced to GND
For option N: Functionless CMOS input (must be terminated to logic high or logic low)
18 IN+ For option I: Functionless CMOS input (must be terminated to logic high or logic low)
For option N: Non-inverting input referenced to GND
19-36 Secondary-side terminal
19 ME IGBT collector voltage monitoring input referenced to pin E
20 N.C. Not connected / reserved for future use
21 REF Reference voltage for short-circuit monitoring referenced to pin E
22 E IGBT emitter terminal
23 Cs 16.4V nominal voltage power supply referenced to pin COM
24 COM Common terminal (secondary side ground)
25 G Gate driver output
26-29 Physically not present
30-36 N.C. Not connected / reserved for future use
Not connected pins are designated as N.C.
IGD616
Preliminary Data Sheet
Mechanical Data
Fig. 3 Footprint of IGD616. Grid is 1.27mm (50mil). Recommended diameter of
solder pad is 1.6mm. Recommended diameter of drill holes is 1.0mm.
Height X = 18.5mm +/- 0.5mm for option T.
Height X = 20.5mm +/- 0.5mm for option C.
Page 6 CT-Concept.com
IGD616
Preliminary Data Sheet
Absolute Maximum Ratings
Parameter Condition/remark Min. Max. Units
Primary supply voltage VCC To GND 0 16 V
Pin G IGBT gate pulse current -16.0 +16.0 A
Maximum Pulse Gate Charge Qg without external Capacitors (note 9) 5.1 μC
external Capacitors < 100μF (notes 2, 9) 55 μC
IGBT average gate power 6.0 W
Primary supply current Continuous, after startup sequence 550 mA
IGBT switching frequency see diagram 150 kHz
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
00.511.522.533.544.55
Gate Charge [uC]
Maxim um S wit ching Frequ ency [kH z
]
Parameter Rg: Total External Gate Resistance
Rg = 12Ω
Rg = 6Ω
Rg = 3.1Ω
Rg = 1.7Ω
Rg = 2.4Ω
Fig. 4 Maximum allowed switching frequency vs. total gate charge
Parameter Rg (total external gate resistance); unforced convection
(cooling in free air)
Pin IN voltage 0 VCC V
Pin SO voltage 0 VCC V
Pins REF, ME voltages To COM 0 VCC V
Operating ambient temperature Continuous -40 85 °C
Storage ambient temperature -45 90 °C
Lead temperature Soldering, 5 seconds 260 °C
Unless otherwise specified, all data refer to a primary supply voltage of 15V and an ambient temperature
of +85°C.
IGBT-Driver.com Page 7
IGD616
Preliminary Data Sheet
Page 8 CT-Concept.com
Recommended Operating Conditions
Parameter Condition/remark Min. Max. Units
Primary supply voltage VCC To GND 14 16 V
Duty cycle 0 1
Total external gate resistance (Note 3) 1.7 Ω
Electrical Characteristics
Unless otherwise specified, all data refer to a primary supply voltage of 15V and an ambient temperature
of +25°C. Minimum and maximum values refer to the specified maximum rated operating range at
ambient temperature.
Power supply Condition/remark Min. Typ. Max. Units
Primary supply current Without gate load 55 mA
Secondary supply voltage V(Cs, COM) 15.6 16.4 16.8 V
Turn-on gate-to-emitter voltage 14.0 15.1 15.95 V
Turn-off gate-to-emitter voltage -14.0 -15.1 -15.95 V
Power supply monitoring Condition/remark Min. Typ. Max. Units
Secondary supply |V(G, E)| Clear fault state (note 1) 11.5 V
Set fault state 10.8 V
Hysteresis 0.7 V
Short-circuit monitoring Condition/remark Min. Typ. Max. Units
Pin REF pull-up resistor to pin Cs 1425 1500 1575 Ω
Pin REF source current From Cs (note 5) 150 μA
Pin ME pull-up resistor to pin Cs (Note 5) 2090 2200 2310 Ω
Pin ME on-state source current From Cs (note 5) 1.4 mA
Pin ME off-state sink current Towards COM 80 mA
Pin ME off-state resistance Towards COM 125 Ω
Pin REF on-state reference voltage Functional limits (note 5) 2.5 12.5 V
IGD616
Preliminary Data Sheet
IGBT-Driver.com Page 9
Command blocking
When a fault state has been cleared, the next turn-on commands are ignored by the ASIC during the
command blocking time to avoid thermal overload of the power MOSFET or IGBT driven by the gate
driver.
Condition/Remark Min. Typ. Max. Units
Command blocking time Factory-set 17 22 27 ms
(other values upon request)
Pin IN Command Inputs Condition/Remark Min. Typ. Max. Units
Logic level Positive-going threshold 10 V
Negative-going threshold 5 V
Bias sink current 1 mA
Pin capacitance 3 pF
Pin SO Status Outputs
Secondary-side faults cause the channel to turn off immediately. Fault states are transmitted to the
primary side via the signal transformer interface (option T) or via an optocoupler (option C), in the latter
case with an additional delay. Secondary-side faults are then reported at Pin SO.
Condition/Remark Min. Typ. Max. Units
Available current at pins SO [V(VCC) – 1.2V] > V(SO+) > V(SO-)
Fault state 1 μA
Otherwise 1000 μA
Delay to report a fault state Option T:
during command blocking time Until next change at IN*
Option C 20 μs
Timing Characteristics Condition/Remark Min. Typ. Max. Units
Equiv. delay time (note 4) IGBT turn-on, option N 300 ns
IGBT turn-off, option N 350 ns
IGBT turn-on, option I 315 ns
IGBT turn-off, option I 365 ns
Equiv. rise time (note 4) IGBT turn-on 100 ns
Equiv. fall time (note 4) IGBT turn-off 80 ns
Data refer to a gate charge of 1.2μC and a total external gate resistance of 5.6Ω.
IGD616
Preliminary Data Sheet
Page 10 CT-Concept.com
Electrical Insulation Condition/Remark Min. Typ. Max. Units
Operating voltage For option T; continuous (note 6) 1500 V
DC
For option C; continuous (note 6) 600 1000 VDC
Permitted d/dt (VC*E* ) Ensured by design 100 V/ns
Test voltage 50 Hz/1 min (note 7) 4000 VAC, eff
Partial discharge extinction volt. To IEC270 (note 8) 1700 VAC, pk
Creep path primary-secondary Option T 19 mm
Option C 8 mm
Creep path secondary-secondary 19 mm
Footnotes
1) The unipolar primary supply voltage with a nominal value of V(VCC, GND) = 15.0V is multiplied by
a magnetic transformer, resulting in a unipolar secondary power supply voltage with a nominal
value of V(Cs, COM) = 16.4V. To provide a bipolar gate-driving voltage with the nominal values of
V(G, E) = +15.1V for turn-on and V(G, E) = - 15.1V for turn-off, both gate and emitter are
switched in full-bridge configuration via biploar junction transistors (providing a total nominal level
shift of 1.3V). The primary side is equipped with an automatic power-on reset which clears the
fault memories when the supply voltage approaches a specified limit with a maximum value of
13.5V.
2) In typical applications (hard-switching topology using recommended gate resistors and gate
charge) the switching frequency is primarily limited by the switching losses of the IGBT module or
by the gate power due to the gate charge required by the module. The switching losses of the
gate driver depend strongly on the particular operating conditions and increase with reducing the
gate resistance and increasing switching frequency. For switching frequencies beyond 20kHz or
gate pulse charges > 5.1μC, the thermal limits of the gate driver may be exceeded. A derating of
the IGBT’s average gate power is required under these estimated exemplary conditions. Conditions
other than those specified may affect the reliability or lead to thermal breakdown of the gate
drivers. Please ask our support team for a specific estimation. As a rule, the case temperature of
any component of the gate driver should stay below 65°C for an ambient temperature of 25°C.
3) The total external gate resistance is the sum of the IGBT-internal chip resistances and the
externally used gate resistors. Note that the driver-internal minimum resistance is below 0.2Ω. Due
to the finite slew rate of the driver output voltage and to parasitic inductances in the gate control
loop, however, the resulting gate current may not approach the nominal maximum value of 16A.
4) Equivalent delay, rise or fall times are derived from comparisons with the results obtained when
modeling the driver as an ideal pulse-shaped voltage source with no delay and an infinite slew
rate.
5) At the REF pin, a 1.5 kΩ resistor is connected to the positive voltage terminal Cs of the secondary-
side power supply in parallel with a nominal 150μA current source. The reference voltage may be
set via an external Zener diode or an external resistor connected to pin E. Furthermore, at pin ME
a 2.2 kΩ resistor is connected to Cs in parallel with a nominal 1.4mA current source.
6) Maximum continuous, or repeatedly applied DC voltage or peak value of the repeatedly applied AC
voltage between any primary-side pin and any secondary-side pin.
Caution for option C: operating voltages exceeding 600V may degrade the long-term
characteristics of the optocouplers, resulting in an increased delay or a reduced current capability
at pin SO.
7) The test voltage of 4000 Vac(rms)/50 Hz may be applied only one time and for one minute. It
should be noted that with this (strictly speaking obsolete) test method, some (minor) damage
IGD616
Preliminary Data Sheet
IGBT-Driver.com Page 11
occurs to the insulation layers due to the partial discharge. Consequently, this test is not
performed at CONCEPT as a series test. Where repeated insulation tests (e.g. module test,
equipment test, system test) are run, the subsequent tests should be performed at a lower test
voltage: the test voltage is reduced by 400 V for each additional test. The more modern if more
elaborate partial-discharge measurement is preferable to such test methods as it is almost entirely
non-destructive.
8) The partial discharge test is performed for each driver within the scope of series production. This
constitutes a high voltage testing rate of 100% in series production.
9) The supported gate charge refers to the stability of the power supply voltages and to the dynamic
voltage drop at the supply rail. Exceeding the maximum supported gate charge may lead to
malfunction or thermal overload of the gate drivers. The customer may increase the specified
maximum value of the supported gate charge by connecting additional supply capacitors between
terminals Cs and COM up to a total of 100μF. External blocking capacitors must be applied for
pulse gate charges >5.1μC. The capacitance rating must be greater or equal 2μF per 1μC gate
pulse charge exceeding 5.1μC. Place the capacitors with short traces to the IGD616’s pins. Make
sure to check your design for the thermal limits given in note 2.
IGD616
Preliminary Data Sheet
Page 12 CT-Concept.com
Important Notice
The data contained in this product data sheet is intended exclusively for technically
trained staff. Handling all high-voltage equipment involves risk to life. Strict compliance
with the respective safety regulations is mandatory!
Any handling of electronic devices is subject to the general specifications for protecting
electrostatic-sensitive devices according to international standard IEC 747-1, Chapter IX
or European standard EN 100015 (i.e. the workplace, tools, etc. must comply with
these standards). Otherwise, this product may be damaged.
Disclaimer
This data sheet specifies devices but cannot promise to deliver any specific
characteristics. No warranty or guarantee is given – either expressly or implicitly –
regarding delivery, performance or suitability.
CT-Concept Technologie AG reserves the right to make modifications to its technical
data and product specifications at any time without prior notice. The general terms and
conditions of delivery of CT-Concept Technologie AG apply.
Technical Support
CONCEPT provides expert help for your questions and problems:
Internet: www.IGBT-Driver.com/go/support
Quality
The obligation to high quality is one of the central features laid down in the mission
statement of CT-Concept Technologie AG. The quality management system covers all
stages of product development and production up to delivery. The drivers of the SCALE
series are manufactured to the ISO 9001 standard.
IGD616
Preliminary Data Sheet
IGBT-Driver.com Page 13
Ordering Information
Type designation
N, C Non-inverting, optocoupler-assisted driver for 1200V IGBTs IGD616NC1
N, T Non-inverting driver for 1200V or 1700V IGBTs IGD616NT1
I, C Inverting, optocoupler-assisted driver for 1200V IGBTs IGD616IC1
I, T Inverting driver for 1200V or 1700V IGBTs IGD616IT1
Other Upon request
Information about Other Products
For other drivers and evaluation systems
Internet: www.IGBT-Driver.com
Manufacturer
CT-Concept Technologie AG
Intelligent Power Electronics
Renferstrasse 15
CH-2504 Biel-Bienne
Switzerland
Tel. +41 - 32 - 344 47 47
Fax +41 - 32 - 344 47 40
E-mail Info@IGBT-Driver.com
Internet www.IGBT-Driver.com
© Copyright 1992…2008 by CT-Concept Technologie AG - Switzerland. All rights reserved.
We reserve the right to make any technical modifications without prior notice. Version from 2008-04-17
