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FDS89161LZ Dual N-Channel Shielded Gate PowerTrench(R) MOSFET 100 V, 2.7 A, 105 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using High performance trench technology for extremely low rDS(on) Fairchild Semiconductor`s advanced PowerTrench(R) process that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. High power and current handling capability in a widely used surface mount package Application CDM ESD protection level > 2KV typical (Note 4) DC-DC conversion Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A 100% UIL Tested RoHS Compliant D2 D2 D1 D1 G2 S2 G1 S1 Pin 1 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 100 Units V VGS Gate to Source Voltage 20 V Drain Current -Continuous 2.7 ID Parameter -Pulsed 15 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) Power Dissipation TC = 25 C Power Dissipation TA = 25 C 13 31 (Note1a) Operating and Storage Junction Temperature Range 1.6 -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient (Note 1) 40 (Note 1a) 78 C/W Package Marking and Ordering Information Device Marking FDS89161LZ Device FDS89161LZ (c)2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. 1.2 Package SO-8 1 Reel Size 13 '' Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS89161LZ Dual N-Channel Shielded Gate PowerTrench(R) MOSFET September 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 10 A 2.2 V 100 V 68 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C VGS = 10 V, ID = 2.7 A 81 105 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 2.1 A 110 160 VGS = 10 V, ID = 2.7 A, TJ = 125 C 140 182 VDS = 10 V, ID = 2.7 A 7.8 gFS Forward Transconductance 1 1.7 -6 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1MHz 227 302 pF 44 58 pF 3 4 pF 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = 50 V, ID = 2.7 A 3.8 10 1.2 10 ns ns 9.5 17 ns 1.6 10 ns 3.8 5.3 nC 2.1 2.9 nC 0.7 nC 0.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.7 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.8 1.2 31 56 ns 20 36 nC IF = 2.7 A, di/dt = 100 A/s V NOTES: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1 in2 pad of 2 oz copper b) 135C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 0.3 mH, IAS =25 A, VDD = 27 V, VGS = 10V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. 1.2 2 www.fairchildsemi.com FDS89161LZ Dual N-Channel Shielded Gate PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 4 VGS = 10 V VGS = 8 V VGS = 6 V 12 VGS =5 V VGS = 4 V 9 6 VGS = 3.5 V 3 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 3.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 15 3 VGS = 5 V 2 VGS = 6 V 1 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 5 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 15 500 ID = 2.7 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 VGS = 10 V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 400 300 TJ = 125 oC 200 100 TJ = 25 oC IS, REVERSE DRAIN CURRENT (A) VDS = 50 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 6 TJ = 150 oC 3 TJ = 25 oC 2 TJ = -55 oC 4 6 8 20 10 4 6 8 10 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 0.001 0.0 10 TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics (c)2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. 1.2 2 Figure 4. On-Resistance vs Gate to Source Voltage 12 9 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) 15 0 ID = 2.7 A 0 0.6 -75 Figure 3. Normalized On-Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 6 VGS = 8 V ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0 VGS = 4 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS89161LZ Dual N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics ( N-Channel) TJ = 25C unless otherwise noted 400 VDD = 25 V ID = 2.7 A Ciss 8 100 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 10 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 1 Figure 7. Gate Charge Characteristics 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 3.0 2.5 TJ = 25 oC 2.0 TJ = 100 oC 1.5 3 VGS = 10 V 2 VGS = 6 V 1 o RJA = 78 C/W TJ = 125 oC 1.0 0.01 0.1 1 0 25 2 50 -1 ID, DRAIN CURRENT (A) VDS = 0 V 10 -4 10 TJ = 125 oC -5 10 -6 10 TJ = 25 oC -7 10 100 us 1 0.1 1 ms THIS AREA IS LIMITED BY rDS(on) -8 10 0.01 0.005 0.1 -9 5 150 20 10 -3 0 125 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 10 10 100 o Figure 9. Unclamped Inductive Switching Capability -2 75 TA, Ambient TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Ig, GATE LEAKAGE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 Crss 1 0.1 10 15 20 25 30 35 100 ms SINGLE PULSE TJ = MAX RATED RJA = 135 oC/W 1s 10 s TA = 25 oC DC 1 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage (c)2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. 1.2 10 ms Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDS89161LZ Dual N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics ( N-Channel) TJ = 25C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 1000 100 10 SINGLE PULSE o RJA = 135 C/W 1 o TA = 25 C 0.5 -4 10 -3 -2 10 -1 10 10 1 2 10 3 10 10 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve (c)2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. 1.2 5 www.fairchildsemi.com FDS89161LZ Dual N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics ( N-Channel) TJ = 25C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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