2
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS015NT1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +40 Vdc
Gate--Source Voltage VGS --6.0, +12 Vdc
Operating Voltage VDD 17, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +150 C
Operating Junction Temperature (1,2) TJ--40 to +150 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD125
1.0
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 85C, 15 W CW, 12.5 Vdc, IDQ = 100 mA, 870 MHz
RJC 1.0 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) A, passes 150 V
Charge Device Model (per JESD22--C101) IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =40Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 12.5 Vdc, VGS =0Vdc)
IDSS — — 2 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 600 nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=78Adc)
VGS(th) 1.8 2.2 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=0.78Adc)
VDS(on) —0.15 —Vdc
Forward Transconductance
(VDS =10Vdc,I
D=5.9Adc)
gfs —4.4 — S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 12.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.04 —pF
Output Capacitance
(VDS = 12.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —34 —pF
Input Capacitance
(VDS = 12.5 Vdc, VGS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —74 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955. (continued)