TRANSISTOR
OPTOCOUPLERS
ISOCOM
ISOCOMISOCOM
ISOCOM
®
LTD
Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use.
Isocom Ltd cannot accept liability for any errors or omissions.
For sales enquiries, or further information, please contact our sales office at:
Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH
Tel: +44 0191 4166 546 Fax: +44 0191 4155 055 Email sales@isocom.uk.com
Or go to the Isocom Website @: Http://www.isocom.uk.com
TLP521 TLP521-2 TLP521-4
4 3
1
2
8 7 6 5
1
2
3
4
16 15 14 13 12 11 10 9
1
2
3
4
5
6
7
8
DESCRIPTION
These devices are single, dual and quad optocouplers. Each channel is composed of a Gallium
Arsenide infra-red emitting diode and a silicon phototransistor. Package styles for these devices
include 4 pin, 8 pin, and 16 pin, with surface mount, butt cut and gull wing options available.
The same electrical die, assembly processes and materials are used for each channel of each
device shown below. Therefore absolute maximum ratings, recommended operating conditions,
electrical specifications and performance characteristics are identical for all units. Any exceptions,
due to packaging variations and limitations, are as noted.
Isocom Ltd supplies a multitude of plastic optocouplers for all applications varying from standard
transistor optos through to Darlington and Schmitt Trigger devices. It’s massive family of optos vary
in speed allowing maximum opportunity to engineers worldwide.
All devices are performance guaranteed between -20ºC and +80ºC and have completed rigorous
testing. The Company's customers can be assured of our commitment to stringent quality, reliability
and inspection standards, as demonstrated by our existing approvals. Other customer specific
options can also be offered.
FEATURES
Performance guaranteed over -55°C to +125°C temperature range
High current transfer ratio
7500V electrical isolation
TRANSISTOR
OPTOCOUPLERS
ISOCOM
ISOCOMISOCOM
ISOCOM
®
LTD
Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use.
Isocom Ltd cannot accept liability for any errors or omissions.
For sales enquiries, or further information, please contact our sales office at:
Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH
Tel: +44 0191 4166 546 Fax: +44 0191 4155 055 Email sales@isocom.uk.com
Or go to the Isocom Website @: Http://www.isocom.uk.com
ABSOLUTE MAXIMUM RATINGS
Storage Temperature -65°C to +100°C
Operating Temperature -55°C to +80°C
Lead Soldering Temperature 260°C 1.6mm from case for 10S
Input-to-Output Isolation Voltage 7500VDC
Input Diode
Forward DC Current 50mA
Reverse DC Voltage 7V
Peak forward Current 1.5mA 10µS duration
Power Dissipation 100mW Derate linearly above 100°C at 1.6WC.
Output Transistor
Collector-Emitter Voltage
50V
BV
CEO
Emitter-Collector Voltage
7V
BV
ECO
Collector-Base Voltage
70V
BV
CBO
For
Collector Current
50mA
100mA
t = 1mS
Power Dissipation
100mW
For Derate linearly above 100°C at 1.4WC
PACKAGES
TLP521 - 4 Pin TLP521-2 - 8 pin
Single Channel Dual Channel
0.26
13.00°
7.62
6.50
Units: mm
Tolerance:
±0.1
4.60
3.50
3.00
0.4
2.70
0.51.20 2.54
9.68
3.50
3.00
0.4
2.70
0.5
1.20 2.54
Units: mm
Tolerance:
±0.1
0.26
13.00°
7.62
TLP521-4 - 16 Pin
Quad Channel
2.54
0.5
19.84
3.50
3.00 0.4 2.70
1.20
Units: mm
Tolerance:
±0.1
0.26
13.00°
7.62
6.50
SMD and GULL WING are available for all the above.
TRANSISTOR
OPTOCOUPLERS
ISOCOM
ISOCOMISOCOM
ISOCOM
®
LTD
Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use.
Isocom Ltd cannot accept liability for any errors or omissions.
For sales enquiries, or further information, please contact our sales office at:
Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH
Tel: +44 0191 4166 546 Fax: +44 0191 4155 055 Email sales@isocom.uk.com
Or go to the Isocom Website @: Http://www.isocom.uk.com
ELECTRICAL CHARACTERISTICS
T
A
= 25°C U.O.S. (each channel where appropriate).
Input Diode Electrical Characteristics
Parameter Symb
ol
Test Conditions Min Typ Max Units
I
F
= 10mA 0.7 1.18 1.4
I
F
= 10mA, T
A
= 125°C 0.7 1.10 1.2
Forward Voltage V
F
I
F
= 10mA, T
A
= -55°C 0.7 1.29 1.5
V
Reverse Breakdown Voltage V
R
I
R
= 0.1mA 7 - - V
Reverse Current I
R
V
R
= 3V - - 10 µA
Capacitance C
IN
V = 0, f = 1MHz - 25 - pF
Output Detector Electrical Characteristics
Collector-Emitter Breakdown
Voltage
(See note 1 below)
BV
CEO
I
C
= 1mA 50 - - V
Collector-Base Breakdown Voltage
(See note 1 below)
BV
CBO
I
B
= 0.1mA 70 - - V
Emitter-Collector Breakdown
Voltage
BV
ECO
I
E
= 0.1mA 7 - - V
Emitter-Base Breakdown Voltage BV
EBO
I
B
= 0.1mA 5 - - V
V
CE
= 20V, I
F
= 0 - 6 100 nA Collector-Emitter Leakage Current I
CEO
V
CE
= 20V, I
F
= 0, T
A
= 125°C - 8 100 µA
Coupled Electrical Characteristics
I
F
= 10mA, V
CE
= 5V 50 - 600
I
F
= 10mA, V
CE
= 5V, T
A
= 125°C 50 - 600
I
F
= 10mA, V
CE
= 5V, T
A
= -55°C 60 - 600
DC Current Transfer Ratio
(See note 3)
IC/IF
I
F
= 1mA, V
CE
= 5V 40 - 600
%
Collector-Emitter Saturation Voltage V
CE
(Sat)
I
F
= 10mA, I
C
= 2.5mA - - 0.3 V
Input to Output Capacitance C
IO
V
IO
= 0, f = 1mhz (See note 2
below)
- 2 5 pF
Input to Output Resistance R
IO
V
IO
= 500V (See note 2 below) - 10
11
-
Isolation Voltage V
IO
(See note 2 below) 7500 - - VDC
Delay Time td V
CC
= 5V, I
C
= 2mA - 3.3 7 µS
Rise Time tr R
L
= 100Ohms - 5.0 8 µS
Storage Time ts - 0.4 0.8 µS
Fall Time tf - 4.8 8 µS
Turn -on Time t
on
V
CC
= 5V, I
f
= 5mA - 4 15 µS
Turn-off Time t
off
R
L
= 1KOhms - 8 20 µS
Notes
1. BV
CEO
and BV
CBO
can be selected to suit customer specifications.
2. Measured between input when leads 1, 2 and 3 are shorted together, and output when leads 4, 5 and 6 are shorted together.
3. A higher CTR can be selected to suit customer specification as a standard part.