SILICON CARBIDE (SiC)
SCHOTTKY DIODE
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 9109
Issue 3
Page 1 of 4
SML10SIC06YC
• Hermetic Metal TO-257AA Package.
• Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit
low forward voltage and superb high temperature performance.
• Suitable for high-frequency hard switching applications,
where system efficiency and reliability are paramount.
• No reverse recovery time due to absence of minority
carrier injection.
• Screening Options Available.
ABSOLUTE MAXIMUM RATINGS
(Per Diode, TC = 25°C unless otherwise stated)
VR DC Reverse Voltage 600V
VRRM Repetitive Peak Reverse Voltage 600V
IF DC Forward Current
(TJ = 175°C)
10A
IFRM Repetitive Peak Forward Current
(1)
67A
IFSM Surge Peak Forward Current
(2)
250A
PD Total Power Dissipation at 100W
Derate Above 25°C 0.5W/°C
TJ Junction Temperature Range -55 to +225°C
Tstg Storage Temperature Range -55 to +225°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 2.0 °C/W
Notes
NotesNotes
Notes
(1)
(1)(1)
(1)
T
c
= 25°C, T
p
= 10ms, Half Sine Wave, D = 0.3
(2)
(2)(2)
(2)
T
c
= 25°C, T
p
= 10µs
SILICON CARBIDE (SiC)
SCHOTTKY DIODE
SML10SIC06YC
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9109
Issue 3
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ELECTRICAL CHARACTERISTICS
(Per Diode, TC = 25°C unless otherwise stated)
Static Characteristics
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
IF = 10A 1.5 1.8
VF Forward Voltage TJ = 175°C 2.0 2.4 V
VR = 600V 10 50
IR Reverse Current TJ = 175°C 20 200 µA
Dynamic Characteristics
Qc Total Capacitive Charge VR = 600V, IF = 10A
δi/δt = 500A/µs 25 nC
VR = 1.0V, f = 1.0MHz 480
VR = 200V, f = 1.0MHz 50
C Total Capacitance
VR = 400V, f = 1.0MHz 42
pF
SILICON CARBIDE (SiC)
SCHOTTKY DIODE
SML10SIC06YC
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9109
Issue 3
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Typical Performance Over Temperature Range
Reverse Leakage characteristics of SML10SIC06SYC
0
0.00001
0.00002
0.00003
0.00004
0.00005
0.00006
0.00007
0.00008
0.00009
0.0001
0 100 200 300 400 500 600 700 800 900 1000
VR Reverse Voltage (Volts
Reverse Current (A)
150 25 100 125 150 175 225
Forward Characteristic of SML10SIC06SYC
0
1
2
3
4
5
6
7
0 0.5 1 1.5 2
Vf - Forward Voltage (V)
If - Forward Current (A)
-55 25 100 125 150 175 225
SILICON CARBIDE (SiC)
SCHOTTKY DIODE
SML10SIC06YC
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9109
Issue 3
4 of 4
SML10SIC06YC
Equivalent
Reverse Recovery Time Device
I
F
=500mA, I
R
= 1A, I
RR
=250mA
-1.400
-1.200
-1.000
-0.800
-0.600
-0.400
-0.200
0.000
0.200
0.400
0.600
0.800
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
Time (nS)
Current(A)
-55°C
0°C
25°C
50°C
100°C
150°C
200°C
225°C
SiC Schottky Diode, no minority carrier
recombination thus zero reverse recovery.
Recovery time shown is due to a small
junction capacitance charge and is
independent of junction temperature
MECHANICAL DATA
Dimensions in mm (inches)
1 2 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.92 (0.430)
13.38 (0.527)
13.64 (0.537)
16.38 (0.645)
16.89 (0.665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
12.07 (0.500)
19.05 (0.750)
Dia.
TO
-
2
57
A
A
Pin 1 – Anode 1 Pin 2 – Case / Common Cathode Pin 3 - Anode 2
12 3
case
