MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE FS5VS-10 OUTLINE DRAWING Dimensions in mm a __10.5MAX. we \ 2 \ ha 39 4/8 5 AP ete 1 F | ln 8 ib 2 3 S O24 @| | ey wD GATE - 2. DRAIN oO 3 SOURCE & DRAIN @ VDSS secre crt e ete ce eet werner eee e ete e eee eneeas 500V a @ FDS (ON) (MAX) corte e teen ee ee ees wee ene ats aeeae 1.8Q O83 DD cece eee etree nee rete eee ener este 5A T0-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Tc = 25C) Parameter Conditions Voss Drain-source 500 Vess Gate-source +30 Ip Drain current 5 lpm Drain current 15 Po Maximum 90 Teh Channel! ~55 ~ +150 T. 55 ~ +150 4.2 . MITSUBISHI 2 280 ELECTRICELECTRICAL CHARACTERISTICS (Teh = 25C) MITSUBISHI Nch POWER MOSFET FS5VS-10 HIGH-SPEED SWITCHING USE Symbol Parameter Test conditions - Limits Unit Min. Typ. Max V (8R) OSS | Drain-source breakdown voltage | 10 = imA, Vas = OV 500 _ _ Vv V (BR) GSS | Gate-source breakdown voltage | IG = +100uA, Vos = OV +30 Vv lass Gate leakage current VGs = +25V, Vos = 0V _ _ #10 pA loss Drain current VDS = 500V, Vas = OV _ _ 1 mA VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 2 3 4 Vv rDS (ON) | Drain-source on-state resistance | iD = 2A, VGS = 10V _ 1.4 1.8 Q VDS (ON) | Drain-source on-state voltage | ID = 2A, Vas = 10V _ 2.8 3.6 Vv | yts | Forward transfer admittance | 1D = 2A, Vos = 10V 18 3.0 s Ciss input capacitance. = 600 = pe Coss Output capacitance Vos = 25V, Vas = OV, f= 1MHz _ 80 _ pF Crss Reverse transfer capacitance _ 12 _ pF td {on} Turn-on delay time _ 15 _ ns tr Rise time _ Vop = 200V, lo = 2A, VGs = 10V, RGEN = Res = 502 = 18 = ns te (off) Turn-off delay time _ 60 _ ns tt Fail time _ 30 _ ns Vsp Source-drain voltage Is = 2A, VGS = OV 1.5 2.0 Vv Rih (ch-c)_ | Thermal resistance Channel to case _ 1.39 CAN PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 = tw=t a 80 z * 2 5 K = 60 4 x a fi a 8 40 3 9 z x < Ww ind =s 20 a oO a C=2 3 Puise 9 50 100 150 200 23 5710123 57102 23 57103 2 CASE TEMPERATURE Tc (C) DRAIN-SOQUACE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 20 10 To = 25C PD = 90W Pulse T y = 16 =< 8 VGS = 20V = ~ 10V 2 2 avg b E 12 6 > 6 ci o s z 3 8 o 4 Z Z < < BY oc 5 4 B 2 Te = 25C Pulse Test 0 0 0 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 ~ 281 ELECTRICDRAIN-SOURCE ON-STATE VOLTAGE Vos (ON) (V) DRAIN CURRENT Ip (A) CAPACITANCE Ciss, Coss, Crss (pF) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) To = 25C Test wo zg 28 +2 oO yn _| io = 104 we 5 z Die 22 < oe % 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) To = 25C Vos = 50V Pulse T ne a 2S ui Re ag a < SE 58 Pe %5 4 8 42 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 ; 2 uw 102 = 7 bt 3 zr 2 2 = 10! Crss a 7 ch = 5h f= 1MHz 373 5710923 5710'23 57102 23 DRAIN-SOURCE VOLTAGE Vobs (V} MITSUBISHI Nch POWER MOSFET FS5VS-10 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) To = 25 Pulse Test 0 1071 23 6710923 5710! 23 57102 DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 Vos = 10V Pulse Test 70 mw asi 107] 1o' 23 57109 23 57103 DRAIN CURRENT Ip (A) SWITCHING CHARACTERISTICS (TYPICAL) Toh = 25C VDD = 200V VGS = 10V RGEN = {dioni 107 23 571009 23 5 710! DRAIN CURRENT Ip (A} 2 ~- 252 ate MITSUBISHI ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE rds (ON) (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE Var (0s) (tC) GATE-SOURCE VOLTAGE Vas {V) DRAIN-SOURCE ON-STATE RESISTANCE Ds (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25C) 101 Ost NW 199 Nr OTS 10-1 04 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Toh = 26C lp = 5A 0 8 16 24 32 40 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V ip = 1/2l0 Puise Test -50 9 50 100 150 CHANNEL TEMPERATURE Tech (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = CV lo = mA 50 o 50 100 160 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE Zth (cho) (CC/W) 2 10-2 SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE VGs (th) (V) os Mu anB NG CIs oO i MITSUBISHI Nch POWER MOSFET FS5VS-10 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20 VGS = 0V Pulse Test 16}Tc = 1 % 0.8 1.6 24 3.2 4.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 Vbs = 10V ID = IMA 40 3.0 ~50 0 50 100 750 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS PDM a 7 b= by Pulse 10-423 5710323 5710-223 5710-23 5710 23 710'23 57108 PULSE WIDTH tw (s) MITSUBISHI 2 - 253 ELECTRIC