BAV99W BAV99W Surface Mount Small Signal Double-Diodes Kleinsignal-Doppel-Dioden fur die Oberflachenmontage Version 2006-07-11 2 0.1 0.3 1 0.1 1 2.1 Type Code 1.250.1 0.1 3 2 Power dissipation - Verlustleistung 200 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 70 V Plastic case Kunststoffgehause SOT-323 Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1.3 Dimensions - Mae [mm] 1 = A1 2 = C2 3 = C1/A2 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) per diode / pro Diode BAV99W Power dissipation - Verlustleistung 1) Ptot 200 mW 2) Max. average forward current - Dauergrenzstrom (dc) IFAV 200 mA 2) Repetitive peak forward current - Periodischer Spitzenstrom IFRM 300 mA 2) IFSM IFSM IFSM 0.5 A 1A 2A VRRM 85 V Reverse voltage - Sperrspannung (dc) VR 70 V Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Non repetitive peak forward surge current Stostrom-Grenzwert tp 1 s tp 1 ms tp 1 s Repetitive peak reverse voltage - Periodische Spitzensperrspannung Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Forward voltage Durchlass-Spannung Leakage current 3) Sperrstrom 1 2 3 IF IF IF IF = 1 mA = 10 mA = 50 mA = 150 mA VF VF VF VF < 715 mV < 855 mV < 1.0 V < 1.25 V Tj = 25C Tj = 25C VR = 25 V VR = 70 V IR IR < 30 nA < 2.5 A Tj = 150C Tj = 150C VR = 25 V VR = 70 V IR IR < 30 A < 50 A Total power dissipation of both diodes - Summe der Verlustleistungen beider Dioden Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BAV99W Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Max. junction capacitance - Max. Sperrschichtkapazitat VR = 0 V, f = 1 MHz CT 1.5 pF Reverse recovery time - Sperrverzug IF = 10 mA uber/through IR = 10 mA bis/to IR = 1 mA trr < 4 ns RthA < 620 K/W 1) Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Pinning - Anschlussbelegung 3 1 Marking - Stempelung Double diode, series connection Doppeldiode, Reihenschaltung 1 = A1 2 2 = C2 BAV99W = A7 3 = C1/A2 Other available configurations - Andere lieferbare Konfigurationen Single diode - einzelne Diode BAL99 Double diode, common cathode - Doppeldiode, gemeinsame Kathode BAV70 Double diode, common anode - Doppeldiode, gemeinsame Anode BAW56 1 120 [%] [A] 100 -1 10 80 Tj = 125C 10-2 60 40 Tj = 25C 10-3 20 IF Ptot 0 0 TA 50 100 150 [C] 10-4 Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 1 2 0 VF 0.4 0.6 0.8 1.0 [V] 1.4 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG