APT5014BFLL APT5014SFLL 500V 35A 0.140 POWER MOS 7 R FREDFET (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID TO-247 * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol D3PAK D G S All Ratings: TC = 25C unless otherwise specified. Parameter APT5014BFLL_SFLL UNIT 500 Volts Drain-Source Voltage 35 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 403 Watts Linear Derating Factor 3.22 W/C PD TJ,TSTG 140 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 35 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 17.5A) TYP MAX Volts 0.140 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 6-2004 Characteristic / Test Conditions 050-7025 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol Ciss APT5014BFLL_SFLL Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 550V tf ID = 35A @ 25C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 325 VDD = 333V, VGS = 15V 249 ID = 35A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 nC 3 RG = 1.6 Eon UNIT pF 50 72 20 36 11 6 23 ID = 35A @ 25C Turn-off Delay Time MAX 3261 704 VDD = 550V Rise Time td(off) TYP VGS = 10V Qgs tr MIN J 545 VDD = 333V VGS = 15V ID = 35A, RG = 5 288 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM VSD dv/ MIN TYP MAX 35 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 140 Diode Forward Voltage 2 (VGS = 0V, IS = -35A) 1.3 Volts 15 V/ns Peak Diode Recovery dt UNIT dv/ dt 5 t rr Reverse Recovery Time (IS = -35A, di/dt = 100A/s) Tj = 25C 250 Tj = 125C 525 Q rr Reverse Recovery Charge (IS = -35A, di/dt = 100A/s) Tj = 25C 1.6 Tj = 125C 6.0 IRRM Peak Recovery Current (IS = -35A, di/dt = 100A/s) Tj = 25C 13 Tj = 125C 21 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.31 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.25 0.7 0.20 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7025 Rev C 6-2004 0.35 0.15 0.3 0.10 t1 t2 0.05 0 0.1 Duty Factor D = t1/t2 SINGLE PULSE Peak TJ = PDM x ZJC + TC 0.05 10-5 10-4 10-3 C/W 4 Starting Tj = +25C, L = 2.12mH, RG = 25, Peak IL = 35A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -35A di/dt 700A/s VR 500V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30 UNIT 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5014BFLL_SFLL 100 RC MODEL Junction temp. (C) 0.119 0.0135F Power (watts) 0.191 0.319F Case temperature. (C) ID, DRAIN CURRENT (AMPERES) 15 &10V 8V 80 60 7V 6.5V 20 6V 20 5.5V 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 80 60 40 TJ = +125C TJ = +25C 20 TJ = -55C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 1.10 VGS=10V 1.05 VGS=20V 1.0 0.95 0.90 0 1.10 1.05 1.00 0.95 0.90 0.85 -50 1.2 2.5 I D V = 17.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 NORMALIZED TO = 10V @ 17.5A GS 1.15 1.15 35 0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 6-2004 0 1.2 050-7025 Rev C ID, DRAIN CURRENT (AMPERES) 100 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL Typical Performance Curves APT5014BFLL_SFLL 10,000 140 Ciss 50 100S 10 1mS TC =+25C TJ =+150C SINGLE PULSE 1 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) = 35A 14 12 VDS=100V 10 VDS=250V 8 VDS=400V 6 4 2 0 0 td(off) TJ =+150C TJ =+25C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE V = 333V DD R G = 5 T = 125C V DD R G = 333V = 5 T = 125C J 30 L = 100H 20 tf L = 100H 50 tr and tf (ns) 40 40 30 20 tr td(on) 0 1000 10 10 0 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G SWITCHING ENERGY (J) 50 J 10 6-2004 100 60 20 30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT J EON includes diode reverse recovery. 600 Eon 400 200 Eoff 10 I DD D 20 = 333V = 35A T = 125C J L = 100H 0 10 V 1200 T = 125C 800 0 1400 = 333V = 5 20 30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (J) td(on) and td(off) (ns) 50 050-7025 Rev C 200 70 60 0 Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 100 10 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 D Coss 10mS 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I 1,000 Eoff L = 100H E ON includes 1000 diode reverse recovery. 800 Eon 600 400 200 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT5014BFLL_SFLL Gate Voltage 10 % 90% T = 125 C J td(on) Gate Voltage td(off) tr Drain Voltage 90% 5% T = 125 C J Drain Current 90% tf 10 % 10% 0 Drain Voltage Switching Energy Drain Current Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 APT30DF60 IC V DD V CE G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7025 Rev C 0.46 (.018) 0.56 (.022) {3 Plcs} 6-2004 3.50 (.138) 3.81 (.150)