BC848BW / BC848B
Transistors
Rev.A 1/5
NPN General Purpose Transistor
BC848BW / BC848B
zFeatures
1) BV
CEO
minimum is 30V (I
C
=1mA)
2) Complements the BC858B / BC858BW.
zExternal dimensions (Unit : mm)
BC848BW
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
BC848B, BC848C
0~0.1
(2)(1)
(3)
0.1~0.4
2.1
±
0.1
1.25
±
0.1
0.9±0.1
0.2
0.7
±
0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
−0
All terminals have same dimensions
All terminals have same dimensions
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.950.95
+0.2
−0.1
−0.1
+0.2
+0.1
−0.06
+0.1
−0.05
(2)
(1)
(3)
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
30
30
5
0.1
0.35
150
−65~+150
Unit
V
V
V
A
P
C
0.2
0.2 W
W
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
BC848BW
BC848B
Storage temperature
Collector power
dissipation
∗ When mounted on a 7×5×0.6mm ceramic board.
∗
zElectrical characteristics (Ta=25°C)
Parameter
Conditions
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=30V
V
CB
=30V, Ta=150°C
I
C
/I
B
=100mA/5mA
I
C
/I
B
=10mA/0.5mA
V
CE
/I
C
=5V/10mA
V
CE
=5V, I
E
=−20mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=0.5V, I
E
=0, f=1MHz
Typ.
−
−
−
−
−
−
−
−
200
3
8
−
V
CE
/I
C
=5V/2mA
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
BE(on)
V
CE(sat)
f
T
Cob
Cib
h
FE
Min.
30
30
5
−
−
0.58
−
−
−
−
−
200
Max.
−
−
−
100
5
0.77
0.6
0.25
−
−
−
450
Unit
V
V
V
µA
nA
V
V
MHz
pF
pF
−
(SPEC-C22
)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector output capacitance
DC current transfer ratio
BC848BW / BC848B
Transistors
Rev.A 2/5
zPackaging specifications
BC848BW
UMT3
G1K
T106
3000
BC848B
SST3
G1K
T116
3000
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
zElectrical characteristic curves
0
80
60
40
20
100
2
.0
01.0 I
B
=0mA
0.1
0.2
0.4
0.6
0.8
1.0
1.2
Ta=25°C
I
C
−COLLECTOR CURRENT (mA)
V
CE
−COLLECTOR-EMITTER VOLTAGE (V)
Fig.1 Grounded emitter output
characteristics ( )
0
8.0
6.0
4.0
2.0
10.0
2
.0
01.0 I
B
=0µA
5
10
15
20
25
30
35
Ta=25°C
I
C
-COLLECTOR CURRENT (mA)
V
CE
-COLLECTOR-EMITTER VOLTAGE (V)
Fig.2 Grounded emitter output
characteristics ( )
Ta=25°C
0.1 101.0 100 100
0
100
1000
10
h
FE
-DC CURRENT GAIN
I
C
-COLLECTOR CURRENT (mA)
V
CE
=10V
1V 5V
Fig.3 DC current gain vs. collector current ( )
V
CE
=5V
0.1 101.0 100 100
0
100
1000
10
hFE-DC CURRENT GAIN
I
C
-COLLECTOR CURRENT (mA)
Ta=125°C
Ta=25°C
Ta=−55°C
Fig.4 DC current gain vs. collector current ( )
BC848BW / BC848B
Transistors
Rev.A 3/5
Ta=25°C
VCE=5V
f=1kHz
0.01 10.1 10 10
0
100
1000
10
h
FE
-AC CURRENT GAIN
I
C
-COLLECTOR CURRENT (mA)
Fig.5 AC current gain vs. collector current
Ta=25°C
I
C
/I
B
=10
0.1 1.0 10 10
0
0.08
0.18
0.16
0.12
0.04
0
VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE
(V)
I
C
-COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Ta=25°C
I
C
/I
B
=10
0.1 1.0 10 10
0
0.8
1.2
1.8
1.6
0.4
0
V
BE(SAT)
BASE EMITTER SATURATION VOLTAGE
(V
)
I
C
-COLLECTOR CURRENT (mA)
Fig.7 Base-emitter saturation
voltage vs. collector current
Ta=25°C
V
CE
=5V
0.1 1.0 10 100
0.8
1.2
1.8
1.6
0.4
0
VBE(ON)BASE EMITTER VOLTAGE (V)
I
C
-COLLECTOR CURRENT (mA)
Fig.8 Grounded emitter propagation
characteristics
Ta=25°C
IC/IB=10
1.0 10 10
100
1000
10
t
on
-TURN ON TIME (ns)
I
C
-COLLECTOR CURRENT (mA)
Fig.9 Turn-on time vs. collector
current
Ta=25°C
I
C
/I
B
=10
1.0 10 10
0
100
1000
10
t
r
-RISE TIME (ns)
I
C
-COLLECTOR CURRENT (mA)
V
CC
=40V
Fig.10 Rise time vs. collector
current
Ta=25°C
IC=101B1=101B2
1.0 10 10
0
100
1000
10
t
S
-STORAGE TIME (ns)
I
C
-COLLECTOR CURRENT (mA)
VCE=15V
40V
3V
Fig.11 Storage time vs. collector
current
BC848BW / BC848B
Transistors
Rev.A 4/5
Ta=25°C
VCC=40V
IC=101B1=101B2
1.0 10 10
0
100
1000
10
t
f
-FALL TIME (ns)
I
C
-COLLECTOR CURRENT (mA)
Fig.12 Fall time vs. collector
current
Ta=25°C
f=1MHz
0.5 1105
0
10
100
1
CAPACITANCE (pF)
REVERSE BIAS VOLTAGE (V)
Cib
Cob
Fig.13 Input/output capacitance
vs. voltage
Ta=25°C
0.5 10 100 50
0
5.0
50
0.5
V
CE
COLLECTOR-EMITTER VOLTAGE (V)
I
C
-COLLECTOR CURRENT (mA)
400MHz
400MHz300MHz200MHz100MHz
300MHz
200MHz
100MHz
Fig.14 Gain bandwidth product
Ta=25°C
V
CE
=5V
0.5 1.0 10 100 50
0
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT
(MHz)
I
C
-COLLECTOR CURRENT (mA)
Fig.15 Gain bandwidth product
vs. collector current
Ta=25°C
VCE=6V
f=270Hz
0.1 11010
0
10
1
100
0.1
h PARAMETER NORMALIZED TO 1mA
I
C
-COLLECTOR CURRENT (mA)
hfe
hfe
hre
hoe
hoe
hie
hie
hre
I
C
=1mA
hie=7.8kΩ
hfe=280
hre=4.5×10
−5
hoe=7.5µS
Fig.16 h parameter
vs. collector current
V
CB
=30V
07525 50 100 125 15
0
100P
10P
1P
10n
1n
0.1P
ICBO-COLLECTOR CUTOFF CURRENT
(A)
TA-AMBIENT TEMPERATURE (°C)
Fig.17 Collector cutoff current
Ta=25°C
V
CE
=5V
I
C
=100µA
R
S
=10kΩ
10 1k100 10k 100
k
6
12
10
8
4
2
0
NF NOISE FIGURE (dB)
f-FREQUENCY (Hz)
Fig.18 Noise vs. collector current
Ta=25°C
V
CE
=5V
f=10Hz
0.01 0.1 1 10
10k
1k
100k
100
RS-SOURCE RESISTANCE (Ω)
IC-COLLECTOR CURRENT (mA)
12dB
8dB
3dB5dB
NF=1dB
Fig.19 Noise characteristics ( )
BC848BW / BC848B
Transistors
Rev.A 5/5
Ta=25°C
V
CE
=5V
f=30Hz
0.01 0.1 1 1
0
10k
1k
100k
100
R
S
-SOURCE RESISTANCE (Ω)
I
C
-COLLECTOR CURRENT (mA)
12dB
8dB
3dB
5dB
NF=1dB
Fig.20 Noise characteristics ( )
Ta=25°C
VCE=5V
f=1kHz
0.01 0.1
1
1
0
10k
1k
100k
100
R
S
-SOURCE RESISTANCE (Ω)
I
C
-COLLECTOR CURRENT (mA)
12dB
8dB
3dB
5dB
NF=1dB
Fig.21 Noise characteristics (
)
Ta=25°C
V
CE
=5V
f=10kHz
0.01 0.1 1 1
0
10k
1k
100k
100
RS-SOURCE RESISTANCE (Ω)
IC-COLLECTOR CURRENT (mA)
8dB
3dB
5dB
NF=1dB
Fig.22
Noise characteristics (
)
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.